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N-i-p heterojunction solar cell with silicon quantum dot and preparation method thereof

A solar cell and n-i-p technology, applied in the field of nanomaterials and solar cells, can solve problems such as the hazards of the earth's environment and threats to human living space, and achieve the effects of strengthening photogenerated current, reducing material costs, and reducing production energy consumption

Inactive Publication Date: 2012-04-04
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, under the existing technology, the extensive use of fossil energy has not only caused serious harm to the earth's environment, but also greatly threatened the living space of human beings.

Method used

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  • N-i-p heterojunction solar cell with silicon quantum dot and preparation method thereof
  • N-i-p heterojunction solar cell with silicon quantum dot and preparation method thereof
  • N-i-p heterojunction solar cell with silicon quantum dot and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] (1) Clean the N-type monocrystalline silicon substrate;

[0045] (2) Prepare the pyramid textured structure on the N-type single crystal silicon substrate, and the chemical solvent used for the texture is the prepared solution of potassium hydroxide, deionized water and isopropanol. Wherein, the volumes of deionized water and isopropanol required per gram of potassium hydroxide are: 0.35ml and 1.86ml respectively. The N-type monocrystalline silicon substrate is placed in the prepared chemical solvent and kept in a constant temperature water bath at 75°C for 45 minutes, and the average height of the pyramids formed is between 3 and 8um, and the N-type monocrystalline silicon substrate 3 is obtained;

[0046] (3) Perform NH on the monocrystalline silicon substrate 3 that has been finished with pyramid texture 3 Plasma treatment for 8 minutes, in which NH 3 The flow rate is 45sccm, the RF power is 40W, the substrate temperature is 200°C, and the pressure is 60Pa;

[004...

Embodiment 2

[0054] (1) Clean the N-type monocrystalline silicon substrate;

[0055] (2) Prepare the pyramid textured structure on the N-type single crystal silicon substrate, and the chemical solvent used for the texture is the prepared solution of potassium hydroxide, deionized water and isopropanol. Wherein, the volumes of deionized water and isopropanol required per gram of potassium hydroxide are: 0.35ml and 1.86ml respectively. The N-type monocrystalline silicon substrate is placed in the prepared chemical solvent and kept in a constant temperature water bath at 75°C for 45 minutes, and the average height of the pyramids formed is between 3 and 8um, and the N-type monocrystalline silicon substrate 3 is obtained;

[0056] (3) Perform NH on the monocrystalline silicon substrate 3 that has been finished with pyramid texture 3 Plasma treatment for 8 minutes, in which NH 3 The flow rate is 55sccm, the RF power is 60W, the substrate temperature is 220°C, and the pressure is 60Pa;

[005...

Embodiment 3

[0064] (1) Clean the N-type monocrystalline silicon substrate;

[0065] (2) Prepare the pyramid textured structure on the N-type single crystal silicon substrate, and the chemical solvent used for the texture is the prepared solution of potassium hydroxide, deionized water and isopropanol. Wherein, the volumes of deionized water and isopropanol required per gram of potassium hydroxide are: 0.35ml and 1.86ml respectively. The N-type monocrystalline silicon substrate is placed in the prepared chemical solvent and kept in a constant temperature water bath at 75°C for 45 minutes, and the average height of the pyramids formed is between 3 and 8um, and the N-type monocrystalline silicon substrate 3 is obtained;

[0066] (3) Perform NH on the monocrystalline silicon substrate 3 that has been finished with pyramid texture 3 Plasma treatment for 8 minutes, in which NH 3 The flow rate is 65sccm, the RF power is 40W, the substrate temperature is 220°C, and the pressure is 70Pa;

[006...

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Abstract

The invention discloses an n-i-p heterojunction solar cell with silicon quantum dot and a preparation method thereof, which are characterized in that: a silicon nitride film layer with silicon quantum dot having diameter of 1-6nm is disposed between an N type monocrystalline silicon substrate and a P type noncrystalline silicon layer; and multiple layers in the solar cell overlapped in turn are Ag / Al grid electrode (7), ZnO, Al transparent conductive film (6), P type noncrystalline silicon layer (5), silicon nitride film layer (4) with silicon quantum dot, N type monocrystalline silicon substrate (3), ZnO, Al transparent conductive film (2), and Al metal film back electrode (1). The solar cell has simple structure, wide spectrum response range, high open-circuit voltage and large photocurrent, and the preparation steps of the solar cell are compatible with the existing technology. A good solution is provided for improving conversion efficiency of the existing silicon based solar cell.

Description

technical field [0001] The invention relates to a heterojunction solar cell and a preparation method thereof, in particular to a heterojunction solar cell containing silicon quantum dots and a preparation method thereof, and belongs to the technical field of nanomaterials and solar cells. Background technique [0002] In the 20th century, energy utilization mainly based on fossil fuels played a key role in the survival and development of human beings. However, under the existing technology, the massive use of fossil energy has not only caused serious harm to the earth's environment, but also greatly threatened the living space of human beings. Solar energy is clean, pollution-free, inexhaustible, free to use, and does not require transportation, which meets the requirements of future new energy development. The solar energy industry has developed rapidly in my country in recent years. [0003] Since Bell Laboratories reported the first commercialized Si solar cell in 1954,...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/077H01L31/20
CPCY02E10/50Y02E10/547Y02P70/50
Inventor 曾祥斌姜礼华张笑鲜映霞文国知肖容
Owner HUAZHONG UNIV OF SCI & TECH
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