Silicon carbide quantum dot and preparation method thereof

Abstract

The invention discloses a silicon carbide quantum dot and a preparation method thereof. The silicon carbide quantum dot is similar to a ball shape, the granularity of the silicon carbide quantum is normally distributed in the range of 2.5nm to 5.5nm, the excitation wavelength of the silicon carbide quantum dot is 250nm to 400nm, the emission wavelength is 350nm to 450nm, and the fluorescent spectrum peak is 380nm, 400nm and 420nm. The preparation method of the silicon carbide quantum dot comprises the following steps of mixing polymethylsilane and toluene solvent according to a mass ratio of 0.5 to 10: 600, heating the mixture in a high-pressure kettle to 500 DEG C to 600 DEG C through a program, and naturally cooling the mixture after preserving heat for 1h to 5h; and filtering the prepared toluene liquid containing the silicon carbide quantum dot, and freeze-drying or centrifuging the filter liquid at a high speed to obtain the silicon carbide quantum dot. The granularity distribution of the silicon carbide quantum dot is concentrated, the luminescence is strong and stable, and the preparation method is simple, easy and environment-friendly.

Description

technical field [0001] The invention relates to a nanoscale luminescent material and a preparation method thereof, in particular to a silicon carbide quantum dot and a preparation method thereof. Background technique [0002] Quantum dots, also known as semiconductor nanocrystals, are inorganic nanoparticles composed of hundreds to thousands of atoms. Photosensitive devices, nanoelectronics, active catalysis, biomedicine and other fields have broad application prospects. At present, most of the common quantum dots are II-VI or III-V semiconductor materials, among which CdX (X=S, Se, Te) is mainly studied, but there are many problems in this kind of quantum dots: for example, cadmium ions have a large Toxicity, poor luminescence stability under acidic conditions, etc. At the same time, because the bandgap of II-VI or III-V semiconductor materials is too small, only a small part of the quantum dots produced can emit blue-violet fluorescence, which makes the quantum dots have...

AI Technical Summary

Problems solved by technology

At present, most of the common quantum dots are II-VI or III-V semiconductor materials, among which CdX (X=S, Se, Te) is mainly studied, but there are many problems in this kind of quantum dots: for example, cadmium ions have a large Toxicity, poor luminescence stability under acidic conditions, etc.

However, the preparation methods of SiC quantum dots reported so far are few, and the preparation steps are cumbersome. The electrochemical corrosion method is mainly used, and strong acid is needed as the etchant, which will cause pollution to the environment.

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