Method for improving efficiency of solar cell

A technology for solar cells and efficiency, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as reducing the self-absorption of silicon quantum dots, and achieve the effect of improving efficiency

Active Publication Date: 2010-08-25
ZHEJIANG UNIV
View PDF8 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This reduces the possibility of silicon quant

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for improving efficiency of solar cell
  • Method for improving efficiency of solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] From the plasma preparation system of silicon quantum dots, 2.5 nanometer silicon quantum dots whose surface is passivated by hydrogen are obtained. The standard deviation of the size distribution of silicon quantum dots is 10% of the average size. Put the silicon quantum dots in a mixture of trimethylbenzene and n-dodecene (the volume ratio of trimethylbenzene and n-dodecene is 10:7), and carry out the hydrosilylation reaction at 220°C until the mixture becomes clear . Thus, silicon quantum dots with 12 carbon organic molecular chains attached to the surface are obtained. The surface-modified silicon quantum dots are separated from the mixed liquid by centrifugal separation, and then dispersed in toluene. The resulting silicon ink concentration is 150g / L. Under the excitation of light with a wavelength of 325 nanometers, the silicon quantum dots in the silicon ink emit fluorescence mainly concentrated in the region near the wavelength of 600 nanometers, and the fluor...

Embodiment 2

[0024] From the plasma preparation system of silicon quantum dots, 3 nanometer silicon quantum dots whose surface is passivated by hydrogen are obtained. The standard deviation of the size distribution of silicon quantum dots is 15% of the average size. Put the silicon quantum dots in a mixture of ethanol and acrylic acid (the volume ratio of ethanol and acrylic acid is 3:1), and carry out the hydrosilylation reaction under ultraviolet radiation until the mixture becomes clear. Thus, silicon quantum dots with polyacrylic acid attached to the surface are obtained. The silicon quantum dots with modified surfaces are separated from the mixed liquid by centrifugal separation, and then dispersed in water. The resulting silicon ink concentration is 120g / L. Under the excitation of light with a wavelength of 325 nanometers, the silicon quantum dots in the silicon ink emit fluorescence mainly concentrated in the region near the wavelength of 680 nanometers, and the fluorescence quantu...

Embodiment 3

[0026] A 7-nanometer silicon quantum dot whose surface is passivated by hydrogen is obtained from a silicon quantum dot plasma preparation system. The standard deviation of the size distribution of silicon quantum dots is 30% of the average size. Put the silicon quantum dots in the air and they will oxidize naturally at room temperature. After 70 days of natural oxidation, put the silicon quantum dots with an oxide film on the surface into a mixed solution of ethanol and water (the volume ratio of ethanol to water is 5:2), and use a shear emulsifier to disperse the silicon quantum dots as much as possible. Under the condition that the shear rate is 2000r / min and the reaction temperature is 70℃, add the silane coupling agent CH with a mass ratio of 25% 2 =C(CH 3 )COO(CH 2 ) 3 Si(OCH 3 ) 3 , Adjust the pH value of the system to about 4 with oxalic acid solution, and obtain silicon quantum dots with modified surface after 3 hours of reaction. After centrifugal separation, the sil...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Average sizeaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a method for improving the efficiency of a solar cell. The method is realized by attaching silicon quantum dots of which the surfaces are modified to the surface of a work area of the solar cell. The method comprises the following steps: modifying the surfaces of the silicon quantum dots; dispersing the silicon quantum dots into a solvent to prepare silicon ink; and printing the silicon ink on the surface of the work area of the solar cell to attach the silicon quantum dots of which the surface are modified to the surface of the work area of the solar cell. The method has the advantages that: a silicon element in a selected raw material has large content in the earth crust, and is easy to obtain and non-toxic. Simultaneously, due to the utilization of the silicon quantum dots, the efficiency of the solar cell is remarkably improved and environment pollution is avoided.

Description

Technical field [0001] The invention relates to the field of optoelectronic materials, and in particular to a method for improving the efficiency of solar cells by attaching silicon quantum dots with modified surfaces on the surface of a solar cell working area. Background technique [0002] With the development of the global economy, energy consumption has increased dramatically. Currently, most energy is obtained by burning fossil fuels. The extensive use of fossil fuels has caused a large amount of carbon dioxide and other gases to be discharged into the atmosphere, causing serious environmental problems. Therefore, the development and utilization of various renewable energy sources has received increasing attention from the international community. Among various renewable energy sources, solar energy has become a key development target due to its inexhaustible, inexhaustible, non-polluting, and convenient features. The use of solar energy mainly includes two categories: so...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/18H01L31/0236
CPCY02E10/50Y02P70/50
Inventor 皮孝东李庆杨德仁
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap