Method for manufacturing ultrahigh-density germanium silicon quantum dots based on obliquely-cut silicon substrate

A technology of ultra-high density and quantum dots, which is applied in the field of preparing high-quality ultra-high-density germanium-silicon quantum dots. It can solve the problems of high-density quantum dot materials such as cumbersome process and low quality, and achieve the improvement of photoelectric conversion efficiency. The method is simple and easy , the effect of inhibiting surface migration

Inactive Publication Date: 2014-07-02
FUDAN UNIV
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Problems solved by technology

[0004] In order to solve the cumbersome and low-quality problems of preparing high-density quantum dot materials in the prior art, the

Method used

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  • Method for manufacturing ultrahigh-density germanium silicon quantum dots based on obliquely-cut silicon substrate
  • Method for manufacturing ultrahigh-density germanium silicon quantum dots based on obliquely-cut silicon substrate
  • Method for manufacturing ultrahigh-density germanium silicon quantum dots based on obliquely-cut silicon substrate

Examples

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Embodiment 1

[0023] The chamfered silicon-based substrate needs to be cleaned before being put into the molecular beam epitaxy equipment for growth. The cleaning procedure is as follows:

[0024] (1) Sonicate the beveled Si(100) single wafer in acetone and methanol for 5 minutes each to remove organic matter on the substrate surface. Sonicate in deionized water for 5 minutes;

[0025] (2) After soaking in a mixed solution of sulfuric acid and hydrogen peroxide (volume ratio 4:1) for 10 minutes, rinse with deionized water for 10 minutes;

[0026] (3) After 15 minutes in a water bath at 80°C in a mixed solution of ammonia, hydrogen peroxide, and water (volume ratio 1:1:5), rinse with deionized water for 15 minutes;

[0027] (4) After bathing in a mixed solution of hydrochloric acid, hydrogen peroxide, and water (volume ratio 1:1:5) at 80°C for 15 minutes, rinse with deionized water for 15 minutes;

[0028] (5) Soak in 5wt% hydrofluoric acid for 60-80 seconds to remove the oxide layer on t...

Embodiment 2

[0030] Take the n-type silicon single wafer whose bevel direction is the direction and whose bevel angle is 2°, after cleaning according to the cleaning procedure described in Example 1, put it into molecular beam epitaxy equipment to carry out molecular beam epitaxy of germanium nanomaterials grow. The sampling chamber and the growth chamber were maintained at (10 -8 -10 -10 ) torr vacuum. Both silicon and germanium sources of the system are evaporated by electron beam heating. The following are the process conditions for material growth.

[0031] i) Heating the substrate to 1000°C for 5 minutes to desorb the impurity atoms on the surface;

[0032] ii) Lower the substrate temperature to grow a silicon buffer layer, the buffer layer growth temperature: 500°C, growth thickness: 50nm. Growth rate 0.6? / s;

[0033] iii) Epitaxial growth of silicon-germanium nanomaterials, growth temperature: 400°C, growth rate 0.05 ? / s, thickness of germanium growth 1.2nm, growth rate thick...

Embodiment 3

[0038] Take the p-type silicon single wafer whose bevel direction is the direction and whose bevel angle is 4°, after cleaning according to the cleaning procedure described in Example 1, put it into molecular beam epitaxy equipment for molecular beam epitaxy of germanium nanomaterials grow. The sampling chamber and the growth chamber were maintained at (10 -8 -10 -10 ) torr vacuum. Both silicon and germanium sources of the system are evaporated by electron beam heating. The following are the process conditions for material growth.

[0039] i) Heating the substrate to 800°C for 15 minutes to desorb the impurity atoms on the surface;

[0040] ii) Lower the substrate temperature to grow a silicon buffer layer, the buffer layer growth temperature: 600°C, growth thickness: 100nm. Growth rate 0.6 ? / s;

[0041] iii) Epitaxial growth of germanium silicon nanomaterials, growth temperature: 600°C, growth rate 0.05 ? / s, thickness of germanium growth 0.9nm, immediately lower the te...

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Abstract

The invention belongs to the technical field of manufacturing of nano structures, and particularly relates to a method for manufacturing ultrahigh-density germanium silicon quantum dots based on an obliquely-cut silicon substrate. An obliquely-cut Si (001) single crystal wafer is used as the substrate, chemical cleaning is carried out on the single crystal wafer, the wafer is placed in molecular beam epitaxy equipment for high-temperature impurity removing, firstly a layer of silicon buffer layer grows epitaxially, germanium materials grow finally in a heteroepitaxy mode, and therefore the ultrahigh-density germanium silicon quantum dots are obtained. According to the simple, practical and affordable method, the high-quality ultrahigh-density silicon quantum dots are obtained. According to the method, the problems that when the high-density quantum dot materials are manufactured in the prior art, the process is tedious and the quality is not high are solved, and according to the high-quality and high-density quantum dot material manufactured by the method, the photoelectric conversion efficiency based on a quantum dot device is greatly improved.

Description

technical field [0001] The invention belongs to the technical field of nanostructure preparation, and in particular relates to a method for preparing high-quality ultra-high-density germanium-silicon quantum dots based on an obliquely cut silicon substrate. Background technique [0002] Silicon-based germanium silicon quantum dot material is a new type of nanomaterial developed in recent years. Due to its unique photoelectric properties and inherent compatibility with traditional silicon-based processes, it has broad application prospects and market value. Various optoelectronic devices based on silicon germanium quantum dots, such as silicon germanium quantum dot photodetectors, silicon germanium quantum dot photodiodes, etc., have been well industrialized. However, the photoelectric conversion efficiency of the current silicon germanium quantum dot photoelectric devices is still relatively low. Therefore, there is a need for an effective technical means to improve its ph...

Claims

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Application Information

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IPC IPC(8): H01L21/203
CPCH01L21/02381H01L21/02433H01L21/02532H01L21/02601H01L21/02631
Inventor 钟振扬周通田爽樊永良蒋最敏
Owner FUDAN UNIV
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