Multi-junction solar cell with metamorphic buffer layer and manufacturing method

Abstract

The invention discloses a multi-junction solar cell with a metamorphic buffer layer and a manufacturing method. The thicknesses of all the layers in the component step change layer are sequentially reduced in the set direction, so that the probability of dislocation release in the component step change layer along with reduction of the nanometer hardness and increase of the epitaxial thickness isreduced, and the probability that dislocation extends to a battery active region to influence the performance is reduced. Or, the mismatch degree between the layers in the component step change layeris set to be reduced in sequence, so that the probability of dislocation release in the component step change layer along with the reduction of the nano hardness and the increase of the epitaxial thickness can be further reduced, and the probability that the dislocation extends to the active region of the battery to influence the performance is reduced. That is to say, the multi-junction solar cell enables the dislocation density to be more uniformly distributed in the whole metamorphic buffer layer, and can reduce the interaction between dislocations so as to reduce the line dislocation defect TDD caused by the interaction.

Description

technical field [0001] The invention relates to the technical field of solar cells, more specifically, to a multi-junction solar cell with a metamorphic buffer layer and a manufacturing method. Background technique [0002] Solar cells convert solar energy directly into electricity and are the most efficient form of clean energy. III-V compound semiconductor solar cells have the highest conversion efficiency in the current material system, and have the advantages of good high temperature resistance and strong radiation resistance. They are recognized as a new generation of high-performance and long-life space main power supplies. / Ge lattice-matched triple-junction cells have been widely used in the aerospace field. [0003] However, the current density of the traditional lattice-matched triple-junction cell top cell GaInP and middle cell In0.01GaAs is much smaller than that of the bottom cell Ge, which does not make full use of the solar spectrum and limits the improvement...

AI Technical Summary

Problems solved by technology

However, both the increase of the In composition and the increase of the Al composition will lead to a decrease in the nanohardness of the material, a decrease in the critical thickness, and it is easier to generate stress caused by dislocation release mismatch.

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