Method for preparing silicon quantum dot thin film having multiband characteristic

A technology of silicon quantum dots and thin films, which is applied in the field of preparation of silicon quantum dot thin films, can solve problems such as toxicity and unfavorable environmental protection, and achieve the effects of suppressing size, improving photoelectric conversion efficiency, and good size distribution

Inactive Publication Date: 2011-07-27
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although gallium arsenide, gallium nitride, and sensitized quantum dots can achieve this

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A single crystal silicon wafer with a substrate thickness of 525um and a glass substrate with a thickness of 700um were respectively selected as the substrate, and the two substrates were ultrasonically cleaned with deionized water, acetone and absolute ethanol for 15 minutes in order to perform pretreatment before coating.

[0031] Using argon as the sputtering gas, the magnetron sputtering equipment produced by the German SPECS company and the supporting online detection device are used to perform magnetron co-sputtering on the silicon target and the carbon target, and deposit amorphous on the single crystal silicon wafer and the glass substrate. Silicon carbide film. Among them, the silicon target uses a 70W RF power supply, the carbon target uses a 130W DC power supply, and the substrate bias voltage is 80V; the Ar gas partial pressure is 7.4×10 -3 mbar, the sputtering Ar gas flow rate is 4 sccm; the deposition time is 2 hours, and the film thickness is 120 nm. Aft...

Embodiment 2

[0037] A single crystal silicon wafer with a substrate thickness of 525um and a glass substrate with a thickness of 700um were respectively selected as the substrate, and the two substrates were ultrasonically cleaned with deionized water, acetone and absolute ethanol for 15 minutes in order to perform pretreatment before coating.

[0038]Using argon as the sputtering gas, the magnetron sputtering equipment produced by the German SPECS company and the supporting online detection device are used to perform magnetron co-sputtering on the silicon target and the carbon target, and deposit amorphous on the single crystal silicon wafer and the glass substrate. Silicon carbide film. Among them, the silicon target uses a 100W RF power supply, the carbon target uses a 120W DC power supply, and the substrate bias voltage is 80V; the Ar gas partial pressure is 7.4×10 -3 mbar, the sputtering Ar gas flow rate is 4 sccm; the deposition time is 2 hours, and the film thickness is 120 nm. Aft...

Embodiment 3

[0044] A single crystal silicon wafer with a substrate thickness of 525um and a glass substrate with a thickness of 700um were respectively selected as the substrate, and the two substrates were ultrasonically cleaned with deionized water, acetone and absolute ethanol for 15 minutes in order to perform pretreatment before coating.

[0045] Using argon as the sputtering gas, the magnetron sputtering equipment produced by the German SPECS company and the supporting online detection device are used to perform magnetron co-sputtering on the silicon target and the carbon target, and the batch process is adopted on the single crystal silicon wafer and the glass substrate Deposit a double-layer amorphous silicon carbide film. Among them, the silicon target uses a 120W RF power supply, the carbon target uses a 120W DC power supply, and the substrate bias voltage is 80V; the Ar gas partial pressure is 7.4×10 -3 mbar, the sputtering Ar gas flow rate is 4 sccm; the deposition time is 2.5...

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Abstract

The invention relates to the preparation of a typical material, i.e. a quantum dot thin film for a third generation solar cell, and discloses a method for preparing a silicon quantum dot thin film having multiband characteristic. The size distribution of silicon quantum dots is regulated and controlled through the component ratio change of Si/C to further regulate the scope of absorption spectrumof the silicon quantum dots and significantly improve the photoelectric conversion efficiency of the used material. The method further comprises the steps of: at first, performing magnetron co-sputtering on an Si target and a C target by using Ar ions, regulating the sputtering power of the Si/C target, depositing a component-controllable silicon-rich amorphous silicon carbide thin film on silicon and glass matrix; and then, annealing for a few hours at a high temperature under an atmosphere of nitrogen so as to form the silicon quantum dot thin film having certain size distribution, which isembedded inside the amorphous SiC. The thin film has excellent light absorption characteristic within the wavelength range from 1100 nm (infrared light) to 300 nm (ultraviolet light) and is expected to greatly improve the photoelectric conversion efficiency of relevant photovoltaic devices.

Description

technical field [0001] The invention belongs to the technical field of third-generation solar cells, and in particular relates to a method for preparing a silicon quantum dot thin film embedded in amorphous silicon carbide and having multi-band characteristics. Background technique [0002] The energy crisis has become one of the main constraints that the economic development of countries in the world will face in the future. As the cleanest renewable energy, solar energy has undoubtedly become the focus of researchers' attention. The goal of the third-generation solar energy is to reduce the cost and significantly improve the photoelectric conversion efficiency of photovoltaic devices on the basis of the second-generation thin-film solar cells. At present, the single-bandgap Shockley-Queisser limit of materials is the main problem restricting the light absorption efficiency of solar cells, and research on light-absorbing materials with multi-bandgap characteristics has bec...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/06C23C14/58H01L31/18H01L31/20
CPCY02P70/50
Inventor 马飞畅庚榕徐可为
Owner XI AN JIAOTONG UNIV
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