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Spongy quantum dot solar cell and preparation method thereof

A technology of solar cells and quantum dots, applied in the field of solar cells, can solve the problems of low light absorption efficiency, difficult hole transport, large loss of photo-generated electron transport, etc., and achieve the effects of simple preparation process, short reaction time and ingenious design.

Inactive Publication Date: 2010-11-24
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This structure has the following problems: (1) The transmission loss of photogenerated electrons is large
(2) Difficulty in hole transport
Therefore, the transport of holes restricts the charge separation of QDSCs, thus restricting the improvement of their photoelectric conversion efficiency.
(3) Low light absorption efficiency
However, only a single layer of quantum dots can be loaded outside the transport layer, which limits the effective absorption and utilization of sunlight by quantum dots.

Method used

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  • Spongy quantum dot solar cell and preparation method thereof
  • Spongy quantum dot solar cell and preparation method thereof
  • Spongy quantum dot solar cell and preparation method thereof

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preparation example Construction

[0026] In the preparation method of the present invention, thiourea is excessive, and thiourea not only provides a sulfur source, but also coats the outside of CdS to prevent its further growth. Sodium dodecylbenzenesulfonate is a commonly used anionic surfactant, which can effectively form complexes with metal cations, thereby limiting the growth of particles. The formed CdS quantum dots will form a dendritic porous structure through the action of hydrogen bonds. Thiourea decomposes into NH under alkaline conditions 3 , CO 2 and S 2- , with the decomposition of thiourea, CO 2 Wait for the gas to come out from the inside, so that the anode material of this kind of quantum dot stacked porous structure is formed, see figure 1 with figure 2 , is a scanning electron micrograph of the sponge-like CdS quantum dot anode, figure 1 For top-down scanning electron microscope photographs, figure 2 SEM photograph of the side view. Ammonia water will promote the decomposition of t...

Embodiment 1

[0032] Preparation of a layer of TiO on FTO glass by the suspension coating method 2 The seed layer was then annealed at 500°C for 1 hour for later use. Prepare equal-volume aqueous solutions of 0.05mol / L cadmium acetate and 0.15mol / L thiourea, add in the aqueous solution of cadmium acetate according to the amount of ammonia concentration in the total reaction solution of 1.6mol / L and utilize ultrasonic waves to process it and mix it evenly. Then add the prepared thiourea aqueous solution, and at the same time add sodium dodecylbenzenesulfonate modifier and mix uniformly to form a reaction solution. There will be TiO 2 The FTO glass of the seed layer is placed in a reaction kettle filled with a reaction solution, and reacted at a reaction temperature of 120°C for 2 to 11 hours to prepare a spongy CdS quantum dot film layer, take out the prepared photoanode and test the obtained spongy CdS film Perform annealing treatment. Depend on image 3 It can be seen that a sponge-lik...

Embodiment 2

[0034] In the same reaction kettle as above, prepare an equal-volume aqueous solution of 0.05mol / L cadmium acetate and 0.15mol / L thiourea, and add the aqueous solution of cadmium acetate into the aqueous solution of cadmium acetate according to the amount of ammonia concentration in the total reaction solution of 1.8mol / L. Ultrasonic treatment, followed by adding an aqueous solution of thiourea, adding sodium dodecylbenzenesulfonate modifier and mixing uniformly as a reaction solution. The FTO glass is placed in a reaction kettle filled with a reaction solution, and reacted at a reaction temperature of 120°C for 2 to 11 hours to prepare a sponge-like CdS quantum dot film layer. Figure 4 It can be seen that a porous sponge-like structure is obtained, and the number and porosity of the pores are increasing, and the porosity is larger. After annealing, assemble the battery according to the above method.

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Abstract

The invention provides a novel quantum dot solar cell which integrates a sensitizer and a transmission layer, i.e. quantum dots and oxide nanoparticles in the existing quantum dot solar cell anode structure as a whole, and utilizes the advantages of quantum restriction effect, multi-exciton effect and zonule effect of the quantum dots to increase light absorption, reduce electronic recombination in electronic transmission, and quickly transmit an hole into electrolyte, thus improving photoelectric conversion efficiency of the cell. The invention further provides a preparation method of an anode of a spongy structure stacked by the CdS quantum dots with different porosities. The method has the characteristics of simple process, short reaction time and low reaction temperature.

Description

technical field [0001] The invention relates to a solar cell, in particular to a quantum dot solar cell and a preparation method thereof. Background technique [0002] With the continuous increase of people's demand for energy and the continuous reduction of fossil energy reserves (coal, oil, natural gas), finding sustainable, green and pollution-free alternative new energy has become a key issue of scientific research. Among many alternative energy sources (such as nuclear energy, wind energy, water energy, tidal energy, solar energy, etc.), solar power generation is undoubtedly the most anticipated and promising energy source. The energy that the sun irradiates the earth every year is 5.4×10 24 About J, equivalent to tens of thousands of times of the world's annual energy use. Compared with fossil fuels, solar energy is inexhaustible and has no pollution; the use of solar energy will not destroy the earth's thermal balance and is beneficial to ecological protection; comp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/048H01G9/20H01M14/00H01L51/42H01L51/44H01L51/48
CPCY02E10/549Y02P70/50
Inventor 杜希文吴名科凌涛孙景
Owner TIANJIN UNIV
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