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Quantum dot sensitized solar cell and preparation method thereof

A technology for quantum dot sensitization and solar cells, which is applied in the field of quantum dot sensitization solar cells and their preparation, can solve the problems of difficulty in precise control of the thickness of the passivation layer, inability to suppress interfacial recombination, and incomplete surface coverage of thin films, etc. Achieve the effect of improving battery efficiency, inhibiting recombination and easy operation

Active Publication Date: 2015-10-21
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the interface regulation of quantum dot-sensitized solar cells generally adopts the method of ZnS passivation. This method has some problems, such as the growth particles of the prepared ZnS are larger, resulting in larger particles forming the ZnS passivation layer film, and the film is relatively large. Loose, bare TiO for quantum dots and undeposited quantum dots 2 The surface coverage of the film is not complete, and it cannot effectively inhibit the interfacial recombination
Conventional ZnS passivation layer films are usually obtained by continuous ion layer adsorption (SILAR), which is difficult to achieve precise control of passivation layer thickness

Method used

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  • Quantum dot sensitized solar cell and preparation method thereof
  • Quantum dot sensitized solar cell and preparation method thereof
  • Quantum dot sensitized solar cell and preparation method thereof

Examples

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Embodiment 1

[0034] 1) First screen print a layer of TiO on the FTO glass 2 The slurry is heated at 450° C. for 30 minutes to obtain a nanocrystalline porous layer with a thickness of 3-10 μm, which forms a photoanode.

[0035] 2) Add 40 microliters of 50mM CdSe x Te 1-x The QDs solution is dropped on the surface of the nanocrystalline porous layer, and quantum dots are deposited on the surface of the nanocrystalline porous layer film by diffusion adsorption to form a quantum dot film layer.

[0036] 3) Using atomic layer deposition technology to form a surface modification layer on the quantum dot film:

[0037] Take 10g Al(OC 2 h 5 ) 3 Precursor, which is dispersed in the organic solvent ethanol, and then will contain Al(OC 2 h 5 ) 3 The ethanol solution and water vapor are alternately sent into the reaction chamber in the form of gas pulses, and deposited on the quantum dot layer on the surface of the nanocrystalline particles for chemical adsorption and reaction, and high-puri...

Embodiment 2-20

[0041] The preparation method is the same as that of Example 1, except for the material, thickness, and particle size used for the surface modification layer, see Table 1 for details.

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Abstract

The invention discloses a quantum dot sensitized solar cell and a preparation method thereof. The quantum dot sensitized solar cell comprises a quantum dot layer which is formed on the surface of nano-crystal particles of a nano-crystal porous layer. A surface modification material precursor is deposited on the surface of the quantum dot layer by an atomic layer deposition method to form a surface modification layer. According to the application, a wide-band gap semiconductor material or insulating material is deposited on the surface of the quantum dot layer by an atomic layer deposition technology to form the surface modification layer. Compared with a traditional quantum dot solar cell which is not modified or adopts a ZnS passivation layer, compounding of photo-generated electrons and electrolyte can be inhibited more effectively and the conversion efficiency of the cell is enhanced due to atomic size deposition, tiny growth particles and a more compact surface modification layer film. The method is innovative only in that the surface modification layer is added on the basis of the existing quantum dot layer. Even if the surface modification layer is added, high-temperature treatment is not needed, and drying can be performed at room temperature. The preparation technology is simple.

Description

technical field [0001] The invention relates to the technical field of quantum dot solar cells, in particular to a quantum dot sensitized solar cell and a preparation method thereof. Background technique [0002] A solar cell is a device that converts solar energy into electrical energy through the photoelectric effect or photochemical effect. It is based on semiconductor materials, and its working principle is to use photoelectric materials to absorb sunlight to generate photogenerated electrons. According to the different materials used, solar cells can be divided into silicon solar cells, cells based on III-V compounds (such as gallium arsenide), copper indium tin sulfur and other multi-component compounds, and organic polymers based on functional polymer materials. Batteries, nanocrystalline sensitized solar cells, quantum dot solar cells, inorganic organic lead based perovskite solar cells, etc. Among them, quantum dot solar cells have become a research hotspot due to...

Claims

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Application Information

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IPC IPC(8): H01G9/20
Inventor 孟庆波李冬梅卫会云王国帅罗艳红
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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