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Multi-junction solar cell containing InAs quantum dot structure

A technology of multi-junction solar cells and solar cells, applied in the field of solar photovoltaic

Inactive Publication Date: 2012-05-02
东方电气集团国际合作有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, choosing a Ge cell with a bandwidth of 0.67eV as the bottom cell limits the further improvement of the performance of the triple-junction cell to some extent.

Method used

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  • Multi-junction solar cell containing InAs quantum dot structure
  • Multi-junction solar cell containing InAs quantum dot structure

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Embodiment Construction

[0022] In order to further illustrate the content of the present invention, the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.

[0023] Such as figure 1 Shown, a multi-junction solar cell containing InAs quantum dot structure. Using a p-type GaAs single wafer as the substrate 100, the InAs / GaAs quantum dot bottom cell 200 (including p-GaAs layer 210, InAs / GaAs quantum dot periodic layer 220, n -GaAs layer 230), tunnel junction 300 (n + -GaAs layer, p + -GaAs layer), intermediate cell 400 (p-GaInAs layer, n-GaInAs layer), tunnel junction 500 (n + -GaAs layer, p + -AlGaAs layer), top cell 600 (p-GaInP layer, n-GaInP layer). After the multi-junction solar cell material is grown, the cell electrodes and the anti-reflection film are produced by conventional photolithography and coating processes, and finally the single solar cell chip is prepared by the dicing process.

[0024] The present invention prop...

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Abstract

The invention discloses a multi-junction solar cell containing an InAs quantum dot structure, wherein the multi-junction solar cell can be applied to a concentrated photovoltaic power generation system. The multi-junction solar cell is characterized by taking semiconductor single chips such as Si, Ge, GaAs as substrates, growing a multi-function solar cell material containing an InAs / GaAs quantum dot structure by adopting an MOCVD (metal organic compound chemical vapor deposition) technology or an MBE (molecular beam epitaxy) technology, taking an InAs / GaAs quantum dot solar cell with a p-i-n structure as a bottom cell, taking a GAiNAs cell as an intermediate cell, and taking a GaInP cell as a top cell, thus the bandwidth match of a multi-junction cell is optimized, and the conversion efficiency of the solar cell is improved.

Description

technical field [0001] The invention belongs to the field of solar photovoltaic technology, and in particular relates to a multi-junction solar cell containing an InAs quantum dot structure. Background technique [0002] With the development of modern industry, the global energy crisis and air pollution problems have become increasingly prominent. As an ideal renewable energy source, solar energy has been valued by many countries. It is very important to carry out solar cell research and develop the photovoltaic industry for the sustainable development of national energy. significance. At present, one of the main problems encountered in the development and utilization of solar cells is that the photoelectric conversion efficiency is low, and the cost performance of solar cells is not high, and they cannot meet the needs of large-scale civilian use. At present, commercialized solar cells are mainly divided into thin-film cells such as monocrystalline silicon, polycrystalline...

Claims

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Application Information

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IPC IPC(8): H01L31/076H01L31/0725
CPCY02E10/50Y02E10/548
Inventor 张小宾袁小武李愿杰江瑜张中伟胡蕴成
Owner 东方电气集团国际合作有限公司
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