Preparation method of lead sulfide quantum dot photovoltaic cell

A photovoltaic cell and quantum dot technology, applied in the field of solar cells, can solve the problems of unfavorable charge transmission, low coverage of quantum dots, large particle size distribution range of quantum dots, etc., achieve simple preparation process, improve charge collection efficiency, and low cost Effect

Inactive Publication Date: 2016-11-16
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, in the first type of method, the coverage of quantum dots on the oxide film is usually low; in the second type of method, it can generally guarantee a

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  • Preparation method of lead sulfide quantum dot photovoltaic cell
  • Preparation method of lead sulfide quantum dot photovoltaic cell
  • Preparation method of lead sulfide quantum dot photovoltaic cell

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Embodiment 1

[0024] 1. TiO with a particle size of 20 nm 2 The nano-powder is mixed with a binder and a pore-forming agent to prepare a slurry, and the slurry is coated on the FTO conductive glass substrate by a knife coating method, and sintered at 500°C for 30 minutes to prepare a porous TiO with a thickness of 12 microns. 2 film;

[0025] 2. Soak the film prepared in step 1 in the mixed solution composed of lead acetate, sodium sulfite and sustained-release agent trisodium nitrilotriacetate in a molar ratio of 1:1:a (a=0.5~2), the concentration of lead acetate is 0.05 ~0.5M, keep it in the dark at 25°C for 40 minutes, take it out, rinse it with deionized water, and dry it with air;

[0026] 3. Immerse the film obtained in step 2 in the cation source precursor solution and anion source precursor solution in turn, which is a SILAR cycle, repeat the SILAR cycle 1 to 8 times, and obtain PbS quantum dot sensitized TiO 2 Photoelectrode: During each SILAR cycle, the soaking time in the catio...

Embodiment 2

[0034] 1. TiO with a certain particle size 2 , ZnO and SnO 2 The nano-powder is mixed with the binder and the pore-forming agent to prepare a slurry, and the slurry is coated on the FTO conductive glass substrate by the doctor blade method, and sintered at a certain temperature for 30 minutes to prepare porous TiO 2 film;

[0035] 2. Soak the film prepared in step 1 in a mixed solution composed of lead acetate, sodium sulfite and slow-release agent trisodium nitrilotriacetate in a molar ratio of 1:1:2. The concentration of lead acetate is 0.1M. Stand at ℃ for 40 minutes, rinse with deionized water and air dry after taking out;

[0036] 3. Immerse the film obtained in step 2 in the cation source precursor solution and the anion source precursor solution in turn, which is a SILAR cycle, repeat the SILAR cycle 4 times, and obtain PbS quantum dot sensitized TiO 2 Photoelectrode: During each SILAR cycle, the soaking time in the cation source precursor solution and the anion sour...

Embodiment 3

[0044] 1. TiO with a particle size of 20 nm 2 The nano-powder is mixed with a binder and a pore-forming agent to prepare a slurry, and the slurry is coated on the FTO conductive glass substrate by a knife coating method, and sintered at 500°C for 30 minutes to prepare a porous TiO with a thickness of 12 microns. 2 film;

[0045] 2. Soak the film prepared in step 1 in a mixed solution composed of lead acetate, sodium sulfite and slow-release agent trisodium nitrilotriacetate in a molar ratio of 1:1:2. The concentration of lead acetate is 0.1M. Stand at ℃ for 40 minutes, rinse with deionized water and air dry after taking out;

[0046] 3. Immerse the film obtained in step 2 in the cation source precursor solution and the anion source precursor solution in turn, which is a SILAR cycle, repeat the SILAR cycle 4 times, and obtain PbS quantum dot sensitized TiO 2 Photoelectrode: During each SILAR cycle, the soaking time in the cation source precursor solution and the anion source ...

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Abstract

The invention discloses a preparation method of a lead sulfide quantum dot photovoltaic cell. The method comprises the steps of firstly infiltrating a broadband gap oxide thin film of which the thickness is 2-20 microns into a mixed solution of lead acetate, sodium sulfite and a slow-release agent nitrilotriacetic acid trisodium salt and standing at 5-50 DEG C in a dark place for 10-120 minutes; secondly sequentially infiltrating the obtained thin film in two precursor solutions of a positive ion resource and a negative ion source, controlling the infiltration time at 0.5-5 minutes and repeating the steps for 1-8 times; and finally combining a prepared photoelectrode and polysulfide electrolyte and cuprous sulfide counter electrodes to assemble a quantum dot solar cell. PbS quantum dots which are uniform in size and uniform in distribution can be prepared on the broadband gap oxide thin film, so that the charge transport characteristic can be improved and the charge collection efficiency can be improved while broad spectrum adsorption is ensured; and an efficient and stable quantum dot solar cell device is prepared.

Description

1. Technical field [0001] The invention relates to a solar cell preparation technology, in particular to a preparation method of a lead sulfide quantum dot photovoltaic cell, which belongs to the technical field of solar cells. 2. Background technology [0002] Environmental pollution and energy crisis have become two unavoidable practical problems in today's world. The limitation and non-renewability of fossil fuels have made people more and more aware that the development and utilization of new alternative energy sources is the fundamental way to solve these two problems. Among many new energy sources such as wind energy, water energy, nuclear energy, and solar energy, solar energy has attracted much attention due to its inexhaustible, green and clean characteristics, and has become a focus of government attention and academic research. A solar cell is a device that converts solar radiation directly into electrical energy. There are many types of solar cells, which can b...

Claims

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Application Information

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IPC IPC(8): H01G9/20B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01G9/2031H01G9/2036Y02E10/542Y02P70/50
Inventor 周儒徐进章吉凤巍牛海红万磊黄斌
Owner HEFEI UNIV OF TECH
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