Blue-light perovskite light-emitting diode and preparation method thereof

A light-emitting diode, perovskite technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as poor performance of blue PeLEDs

Active Publication Date: 2021-11-05
SHENZHEN UNIV
View PDF9 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The main purpose of the present invention is to provide a blue-light perovskite light-emitting diode and its preparation method, aiming to solve the technical problem of poor performance of blue-light PeLEDs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Blue-light perovskite light-emitting diode and preparation method thereof
  • Blue-light perovskite light-emitting diode and preparation method thereof
  • Blue-light perovskite light-emitting diode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0070] The preparation method of the perovskite precursor solution is as follows: cesium bromide, lead bromide, large group organic halides and thiocyanate additives are dissolved in dimethyl sulfoxide solvent to prepare the perovskite precursor solution . The perovskite precursor solution is used to prepare a perovskite thin film, that is, to prepare a light-emitting layer.

[0071] The preparation method of the passivation layer precursor solution is as follows: the passivation layer material is dissolved in chlorobenzene solvent to prepare the passivation layer precursor solution.

[0072] Further, the thiocyanate additive can be any one of methylammonium thiocyanate additive, guanidine thiocyanate additive, ammonium thiocyanate additive or additives added with guanidine thiocyanate and methylammonium thiocyanate, The layer material can be any one of tri-n-octylphosphine oxide or triphenylphosphine oxide.

[0073] In this embodiment, when the passivation material used in ...

no. 1 example

[0109] Based on the first embodiment, the second embodiment of the preparation method of the blue light perovskite light-emitting diode of the present invention is proposed. In this embodiment, before step S50, three different perovskite additives of thiocyanate are proposed as follows The preparation process of the precursor solution specifically includes:

[0110] Step A1, dissolving cesium bromide, lead bromide, macroorganic halide and methylammonium thiocyanate additive in dimethyl sulfoxide solvent to obtain the perovskite precursor solution.

[0111] In this example, before the light-emitting layer is prepared, the perovskite precursor solution is prepared first, and there are many ways to prepare the perovskite precursor solution, and different components can be equipped to obtain different perovskite precursors solution. This embodiment proposes the first preparation process of the perovskite precursor solution, the first preparation process of the perovskite precurso...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a blue-light perovskite light-emitting diode and a preparation method thereof. The structure of the blue-light perovskite light-emitting diode sequentially comprises a substrate, an anode, a hole transport layer, a light-emitting layer, a passivation layer, an electron transport layer, an electron injection layer and a cathode from bottom to top, wherein the light-emitting layer is a perovskite thin film prepared from a perovskite precursor solution; when the blue-light perovskite light-emitting diode is prepared, a perovskite thin film is prepared through a perovskite precursor solution added with a thiocyanate additive, so that the thin film morphology of a light-emitting layer is adjusted through the thiocyanate additive; and after the perovskite thin film is prepared, the perovskite thin film is subjected to passivation treatment, so that the performance of the perovskite thin film is improved. The perovskite thin film is prepared based on the additive engineering of the perovskite precursor solution added with the thiocyanate additive, and the surface passivation treatment is utilized, so that the surface defects of the thin film are further reduced, and the light-emitting performance of the blue-light perovskite light-emitting diode is improved.

Description

technical field [0001] The invention relates to the technical field of optoelectronic device preparation, in particular to a blue-light perovskite light-emitting diode and a preparation method thereof. Background technique [0002] Metal halide perovskite is an emerging semiconductor material with excellent optoelectronic properties. It has the characteristics of high electron / hole mobility, high photoluminescence quantum yield, high color purity and easy toning. Solid-state lighting offers entirely new opportunities. In terms of display, perovskite light-emitting diodes (PeLEDs) not only have the same advantages as organic light-emitting diodes (OLEDs), but also make up for the shortcomings of poor color purity and high cost of OLEDs. PeLEDs have developed rapidly in recent years, and the external quantum efficiency (EQE) of near-infrared, red and green perovskite light-emitting devices has exceeded 20%, but the performance of blue PeLEDs is relatively poor. [0003] Tuni...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/56
CPCH10K50/84H10K50/11H10K71/00
Inventor 李贵君罗忠明刘保星郑婷
Owner SHENZHEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products