Green-ray LED structure with component gradual-change buffering layer

A LED structure and composition gradient technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of polarization effects, separation, low growth temperature, etc., to improve crystal quality, increase luminous efficiency, and reduce non-radiative recombination Effect

Inactive Publication Date: 2015-01-21
华芯半导体科技有限公司
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Problems solved by technology

[0003] However, since the In composition (20%--35%) in the quantum well InGaN material in the green LED epitaxial growth process is much higher than that in the blue LED (10%--20%), it will mean that the growth of green Light LED quantum well materials require a lower growth temperature, which is quite different from the growth temperature of n-type GaN layers, which will lead to poor lattice quality of quantum well materials and reduce the height and performance of green LEDs; in addition, During the growth process of green LED multi-quantum well materials, the lattice between the high-temperature n-type GaN layer and the quantum well material changes greatly, which will lead to serious lattice mismatch and polarization effects, resulting in electron-hole wave function spatial separation phenomenon
Therefore, the radiative recombination efficiency of green LEDs will decrease compared to blue LEDs

Method used

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  • Green-ray LED structure with component gradual-change buffering layer

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Embodiment Construction

[0010] As shown in FIG. 1, a GaN nucleation layer 2, an undoped GaN layer 3, a high-temperature n-type GaN layer 4, and a low-temperature compositionally graded n-type In are grown sequentially on the sapphire substrate layer 1. y Ga 1-y N buffer layer 5, In x Ga 1-x N / GaN multiple quantum well layer 6 and p-type GaN layer 7 .

[0011] A green LED structure with a compositionally graded buffer layer, comprising a sapphire substrate layer 1, a GaN nucleation layer 2, an undoped GaN layer 3, a high temperature n-type GaN layer 4, an In x Ga 1-x The N / GaN multiple quantum well layer 6 and the p-type GaN layer 7 are characterized in that the n-type GaN layer 4 and the In x Ga 1-x A low-temperature compositionally graded n-type In is arranged between the N / GaN multiple quantum well layers 6 y Ga 1-y N buffer layer 5 .

[0012] The low temperature composition graded n-type In y Ga 1-y The N buffer layer 5 is composed of multiple layers of n-type In with different In compos...

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Abstract

The invention discloses a green-ray LED structure with a component gradual-change buffering layer. The green-ray LED structure comprises a sapphire substrate layer, a GaN nucleating layer, an undoped GaN layer, a high-temperature n-type GaN layer, an InxGa1-xN / GaN multi-quantum-well layer and a p-type GaN layer, and is characterized in that the low-temperature component gradual-change n-type InyGa1-yN buffering layer is arranged between the high-temperature n-type GaN layer and the InxGa1-xN / GaN multi-quantum-well layer. As the stress borne by the InGaN multi-quantum-well light emitting layer can be buffered through the arrangement of the buffering layer, the crystalline quality of the quantum-well structure layer is improved, non-radiative recombination is reduced, and the light emitting efficiency of green-ray LEDs is improved.

Description

technical field [0001] The invention relates to the technical field of epitaxy of green light LEDs, in particular to a green light LED structure with a composition gradient buffer layer. Background technique [0002] At present, more and more green LED related products have begun to appear on the market. Green LED has a wide range of applications and can be used in large indoor and outdoor displays, traffic lights, backlights (tablets, mobile phone displays, etc.), portable lighting systems, fixed color lighting systems, optical storage systems and many other fields. The market share of green LED related products is also gradually increasing, and the market has higher and higher performance requirements for green LED products. How to obtain high-height, high-quality green LED products has become a hot research topic. [0003] However, since the In composition (20%--35%) in the quantum well InGaN material in the green LED epitaxial growth process is much higher than that in...

Claims

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Application Information

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IPC IPC(8): H01L33/12
CPCH01L33/12
Inventor 王智勇杨翠柏张杨杨光辉
Owner 华芯半导体科技有限公司
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