Resonant cavity microarray high-efficiency light emitting diode chip

Abstract

The invention discloses a resonant cavity microarray high-efficiency light emitting diode chip, which belongs to the field of semiconductor photoelectrons. The resonant cavity microarray high-efficiency light emitting diode chip comprises a transparent conductive layer ITO, a SiO2 isolation layer, an upper Bragg reflector, a resonant cavity, a lower Bragg reflector, a current expansion upper electrode, a substrate, a lower electrode and a lateral oxide layer located above the resonant cavity. The resonant cavity contains an optical radiation active region. The upper Bragg reflector is composedof low-refractive-index material layers and high-refractive-index material layers which are alternately arranged, and the thicknesses of the low-refractive-index material layers and the high-refractive-index material layers are 1 / 4 of the wavelength of incident light. The lower Bragg reflector is composed of low-refractive-index material layers and high-refractive-index material layers which arealternately arranged, and the thicknesses of the low-refractive-index material layers and the high-refractive-index material layers are 1 / 4 of the wavelength of incident light. The light extraction efficiency of the light from the upper surface of the chip is improved, and the light emitted from the side wall can be effectively extracted, so that the light extraction efficiency is improved, the external quantum efficiency is improved, and the resonant cavity microarray high-efficiency light emitting diode chip is realized.

Description

technical field [0001] The invention relates to a resonant cavity-based microarray high-efficiency light-emitting diode chip, which belongs to the field of semiconductor optoelectronics. Background technique [0002] With the continuous improvement of the light efficiency of LED chips, the application of LEDs in the fields of optical fiber communication and lighting has become more and more extensive. The luminous efficiency of LED usually refers to external quantum efficiency, which is the product of internal quantum efficiency and light extraction efficiency. Although the use of quantum wells and heterojunctions to design the active region can make the internal quantum efficiency of LEDs close to the theoretical limit of 100%, the optimal light extraction efficiency of ordinary LEDs is around 2%. Its simple structure is as figure 1 As shown, it includes an upper electrode 100 , an upper confinement layer 200 , an active region 300 , a lower confinement layer 400 , a subs...

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Problems solved by technology

[0003] The object of the present invention is to propose a micro-array high-efficiency light-emitting diode chip based on a resonant cavity, which not only changes the internal light field distribution by using the resonant cavity structure, improves the light extraction efficiency of light from the upper surface of the chip, but also adopts the micro-array structure to make The relative area ratio of the surrounding side walls perpendicular to the upper surface is increased, effectively extracting the light emitted by the side walls, thereby increasing the light extraction efficiency and increasing its external quantum efficiency, so as to simultaneously solve the five problems existing in the above-mentioned traditional LEDs and ordinary LEDs. The problem of low light extraction efficiency of RCLED

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