Atomic layer deposition of tungsten material

Abstract

An implementing mode of the invention provides an improved technology for depositing materials containing tungsten. The technology utilizes an infusion technology and a gaseous phase deposition technology, such as atomic layer deposition (ALD), to provide tungsten-containing materials with obviously improved surface evenness and yield. In one implementing mode, a method for forming tungsten-containing materials on a substrate is provided. The method comprises deposing a substrate, which contains a bottom coating deposited thereon, in a technological chamber; exposing the substrate orderly in a precursor of tungsten and reducing gases so as to deposit a tungsten nucleation layer on the bottom coating, during the ALD technology; and depositing a tungsten block layer on the tungsten nucleation layer. The invention is characterized in that the reducing gases comprise a hydrogen gas / hydride flow ratio of 40:1, 100:1, 500:1, 800: 1, 1000:1 or more, and comprise hydride such as diborane, silicane or silicoethane.

Description

Atomic Layer Deposition of Tungsten Materials technical field Embodiments of the present invention relate to the processing of substrates, and more particularly, to depositing a tungsten layer on a substrate using a vapor deposition process. Background technique The semiconductor processing industry, as well as other industries employing substrate processing technologies, is constantly striving to achieve greater throughput while increasing the uniformity of deposited layers on substrates having larger surface areas. These same factors combined with new materials also provide higher integration of circuits per unit area of ​​the substrate. As the level of circuit integration increases, so does the need for greater uniformity and process control of the associated layer thicknesses. Accordingly, various techniques have been developed to deposit layers on substrates in a cost-effective manner while maintaining control over the characteristics of the layers. Chemical vapor ...

AI Technical Summary

Problems solved by technology

Additionally, tungsten has proven difficult to deposit uniformly

Poor surface uniformity usually increases film resistivity

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