Multi-quantum-well structure used in photoelectron device and manufacturing method thereof

A multi-quantum well structure, optoelectronic device technology, applied in semiconductor/solid-state device manufacturing, electrical components, semiconductor devices, etc., can solve problems such as high production costs, numerous structures, and complex processes, achieving easy implementation and strong controllability , the effect of simple process

Active Publication Date: 2009-11-18
宁波安芯美半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the multi-quantum well structure described in this patent

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  • Multi-quantum-well structure used in photoelectron device and manufacturing method thereof
  • Multi-quantum-well structure used in photoelectron device and manufacturing method thereof
  • Multi-quantum-well structure used in photoelectron device and manufacturing method thereof

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Embodiment 1

[0031] refer to figure 1 , the present embodiment provides a multi-quantum well structure 20 for optoelectronic devices, including n sequentially overlapping quantum well structures, the quantum well structure is formed by overlapping a potential barrier layer 21 and a potential well layer 22 in sequence, That is, it includes n barrier layers 21 and n potential well layers 22, the bandgap of the potential well layers 22 is smaller than that of the barrier layers 21, wherein n can be any integer greater than 2 and less than 20, and the optoelectronic device includes an N-type semiconductor Layer 13 and P-type semiconductor layer 14.

[0032] The barrier layer 21 can be a binary, ternary, or quaternary compound or mixture composed of Ga, In, Al, and N, including GaN, In x Ga 1-x N. Al y Ga 1-y N, In a Ga b Al 1-a-b N, where 0

[0033] The potential well layer 22 can be a binary, ternary, or quaternary compound or ...

Embodiment 2

[0045] refer to figure 1 , the present embodiment provides a multi-quantum well structure 20 for optoelectronic devices, including n sequentially overlapping quantum well structures, the quantum well structure is formed by overlapping a potential barrier layer 21 and a potential well layer 22 in sequence, That is, it includes n barrier layers 21 and n potential well layers 22, the bandgap of the potential well layers 22 is smaller than that of the barrier layers 21, wherein n can be any integer greater than 2 and less than 20, and the optoelectronic device includes an N-type semiconductor Layer 13 and P-type semiconductor layer 14.

[0046] The barrier layer 21 can be a binary, ternary, or quaternary compound or mixture composed of Ga, In, Al, and N, including GaN, In x Ga 1-x N. Al y Ga 1-y N, In a Ga b Al 1-a-b N, where 0

[0047] The potential well layer 22 can be a binary, ternary, or quaternary compound or ...

Embodiment 3

[0059] refer to figure 1 , the present embodiment provides a multi-quantum well structure 20 for optoelectronic devices, including n sequentially overlapping quantum well structures, the quantum well structure is formed by overlapping a potential barrier layer 21 and a potential well layer 22 in sequence, That is, it includes n barrier layers 21 and n potential well layers 22, the bandgap of the potential well layers 22 is smaller than that of the barrier layers 21, wherein n can be any integer greater than 2 and less than 20, and the optoelectronic device includes an N-type semiconductor Layer 13 and P-type semiconductor layer 14.

[0060] The barrier layer 21 can be a binary, ternary, or quaternary compound or mixture composed of Ga, In, Al, and N, including GaN, In x Ga 1-x N. Al y Ga 1-y N, In a Ga b Al 1-a-b N, where 0

[0061] The potential well layer 22 can be a binary, ternary, or quaternary compound or ...

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Abstract

The invention discloses a multi-quantum-well structure used in photoelectron device, wherein the thickness of a potential well layer near N type semiconductor layer is larger than that of the potential well near P type semiconductor layer. The invention also discloses a manufacturing method of the multi-quantum-well structure, including that Ga barrier layer N and InxGa potential well layer N are alternately grown on the N type semiconductor layer of the photoelectron device by adopting MOCVD technology, wherein the growth time of the InxGa1-x potential well layer N near the N type semiconductor layer is 50-200s, and the growth time of the InxGa1-x potential well layer N near the P type semiconductor layer is 0.5-1 time that of the potential well layer near the N type semiconductor layer. The multi-quantum-well structure of the invention can improve the internal quantum efficiency of the photoelectron device, improves reverse voltage and antistatic property, and reduces halfwidth of the luminous spectrum peak to improve luminous purity; and the structure can reduce dark current to improve the sensitivity of a detector when being applied in the detector.

Description

technical field [0001] The invention relates to a quantum well structure and a manufacturing method for semiconductor optoelectronic devices such as light-emitting diodes, lasers, photodetectors, solar cells, etc., in particular to a multi-quantum well structure and a manufacturing method for semiconductor optoelectronic devices. Background technique [0002] In recent years, the introduction of quantum well structures, especially multi-quantum well structures (MQW: Multi-Quantum-Well) has injected new vitality into the development of semiconductor optoelectronic devices, such as light-emitting diodes, lasers, and photodetectors. In the multi-quantum well structure, the potential wells in the additional periodic potential distribution along the alternate growth direction of thin layers caused by the different forbidden band widths of the two materials are called quantum wells. The forbidden band width of the potential well layer should be smaller than the forbidden band widt...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L31/10H01L31/18H01L21/205
CPCY02P70/50
Inventor 李淼颜建锋
Owner 宁波安芯美半导体有限公司
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