Two-dimensional transition metal disulfides monocrystalline, and preparation method and applications thereof

A technology of transition metal and dichalcogenides, which is applied in the field of two-dimensional transition metal dichalcogenide single crystals and its preparation, which can solve the problems of residues, difficulty in obtaining, and control, so as to avoid oxide residues and reduce nucleation points Effect

Inactive Publication Date: 2015-08-19
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the oxides (MoO 3 and WO 3 ) will remain on the surface of the obtained sample, which will have a great impact on the quality and application of the obtained TMDs single crystal
Some researchers avoid the introduction of oxides by changing the precursor to the synthesized TMDs powder, but this cannot control the grown TMDs film by controlling the material ratio of the metal to the chalcogen element, resulting in The degree of controllability of the product is reduced; some researchers also changed the precursor to a gas reactant, which can improve the controllability of generating TMDs single crystals, but this method is difficult to obtain large-area TMDs single crystals under a large growth window area

Method used

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  • Two-dimensional transition metal disulfides monocrystalline, and preparation method and applications thereof
  • Two-dimensional transition metal disulfides monocrystalline, and preparation method and applications thereof
  • Two-dimensional transition metal disulfides monocrystalline, and preparation method and applications thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Example 1: Preparation of single-layer tungsten diselenide single crystal

[0040] (1) Cut the quartz plate into a square of 10×10 mm with a silicon knife, ultrasonically clean it in acetone, ethanol, and water for 20 minutes, then clean it with deionized water, and dry it with nitrogen.

[0041] (2) The cleaned quartz sheet is sputtered on the front side by magnetron sputtering, and the electron evaporator (ULVAC, ACS-4000-C4) is used for sputtering the tungsten layer under high vacuum, with a tungsten target with a purity greater than 99.95%. Shooting time is 7 seconds.

[0042] (3) be that 99.5% with purity, the selenium powder that quality is 0.03g is put into a new quartz boat, and this quartz boat is placed on the low temperature zone (a port position of CVD furnace) of one end of CVD furnace, as figure 1 shown.

[0043] (4) Put the quartz sheet sputtered with the tungsten layer into the quartz boat, and the quartz boat is pushed into the high temperature zone (...

Embodiment 2

[0050] Example 2: Preparation of double-layer tungsten diselenide

[0051] (1) Cut the quartz plate into a square of 10×10 mm with a silicon knife, ultrasonically clean it in acetone, ethanol, and water for 20 minutes, then clean it with deionized water, and dry it with nitrogen.

[0052] (2) The cleaned quartz sheet is sputtered on the front side by magnetron sputtering, and the electron evaporator (ULVAC, ACS-4000-C4) is used for sputtering the tungsten layer under high vacuum, with a tungsten target with a purity greater than 99.95%. Shooting time is 10 seconds.

[0053] (3) being 99.5% with purity, the selenium powder that quality is 0.05g is put into a new quartz boat, and this quartz boat is placed on the low temperature zone (a port position of CVD furnace) of one end of CVD furnace, as figure 1 shown.

[0054] (4) Put the quartz sheet sputtered with the tungsten layer into the quartz boat, and the quartz boat is pushed into the high temperature zone (the middle part ...

Embodiment 3

[0061] Example 3: Preparation of single-layer molybdenum disulfide single crystal

[0062] (1) Cut the quartz plate into a square of 10×10 mm with a silicon knife, ultrasonically clean it in acetone, ethanol, and water for 20 minutes, then clean it with deionized water, and dry it with nitrogen.

[0063] (2) The cleaned quartz sheet is sputtered on the front side by magnetron sputtering, and the electron evaporator (ULVAC, ACS-4000-C4) is used for molybdenum layer sputtering under high vacuum, and the molybdenum target with a purity greater than 99.95% is used for sputtering. Shooting time is 7 seconds.

[0064] (3) be that 99.5% with purity, the sulfur powder that quality is 0.08g is put into a new quartz boat, and this quartz boat is placed on the low-temperature zone (a port position of CVD furnace) of one end of CVD furnace, as figure 1 shown.

[0065] (4) Put the quartz sheet that has sputtered molybdenum layer into the quartz boat, and the quartz boat is pushed into th...

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Abstract

The invention discloses a two-dimensional transition metal disulfides (TMDs) monocrystalline, and a preparation method and applications thereof. According to the preparation method, in an inert atmosphere, assist control of the concentration of S or Se in a system is realized with common metal which is capable of reacting with sulfur family elementary substance (S, Se) and hydrogen so as to control sulfuration degree or selenylation degree of a transition metal layer, and controllable growth of TMDs monocrystalline is realized via chemical vapor deposition; deposition temperature is controlled to be 750 to 850 DEG C, and deposition time is controlled to be 5 to 15min so as to complete TMDs monocrystalline preparation; wherein, strict control on high-quality two-dimensional transition metal disulfides monocrystalline is realized via optimization of preparation parameters such as substrate sputtering treatment method, sulfur family elementary substance powder using amount, absorbed S/Se metal area and kinds, hydrogen concentration, growth temperature, and growth time.

Description

technical field [0001] The invention belongs to the technical field of preparation of two-dimensional thin film materials, and relates to a two-dimensional transition metal dichalcogenide single crystal and its preparation method and application. Background technique [0002] Transition metal dichalcogenides (TMDs) have a similar structure to graphene, but have their own unique photoelectric properties. Due to the existence of their bandgap, they also have better mobility values ​​and on-off ratios. They are used in optoelectronic devices and P-N Junction semiconductors have outstanding performance, so they are favored by many researchers. In recent years, two-dimensional transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS 2 ), tungsten disulfide (WS 2 ), molybdenum diselenide (MoSe 2 ) and tungsten diselenide (WSe 2 ), etc., especially in terms of metallicity, semiconductivity and superconductivity. At the same time, the bandgap and properties of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/00C30B29/46
Inventor 刘津欣王凌翔
Owner WUHAN UNIV
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