Two-dimensional transition metal disulfides monocrystalline, and preparation method and applications thereof

A technology of transition metal and dichalcogenides, which is applied in the field of two-dimensional transition metal dichalcogenide single crystals and its preparation, which can solve the problems of residues, difficulty in obtaining, and control, so as to avoid oxide residues and reduce nucleation points Effect
CN104846434AInactive Publication Date: 2015-08-19WUHAN UNIV
6 Cites 42 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
WUHAN UNIV
Publication Date
2015-08-19
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a two-dimensional transition metal disulfides (TMDs) monocrystalline, and a preparation method and applications thereof. According to the preparation method, in an inert atmosphere, assist control of the concentration of S or Se in a system is realized with common metal which is capable of reacting with sulfur family elementary substance (S, Se) and hydrogen so as to control sulfuration degree or selenylation degree of a transition metal layer, and controllable growth of TMDs monocrystalline is realized via chemical vapor deposition; deposition temperature is controlled to be 750 to 850 DEG C, and deposition time is controlled to be 5 to 15min so as to complete TMDs monocrystalline preparation; wherein, strict control on high-quality two-dimensional transition metal disulfides monocrystalline is realized via optimization of preparation parameters such as substrate sputtering treatment method, sulfur family elementary substance powder using amount, absorbed S / Se metal area and kinds, hydrogen concentration, growth temperature, and growth time.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the technical field of preparation of two-dimensional thin film materials, and relates to a two-dimensional transition metal dichalcogenide single crystal and its preparation method and application. Background technique

[0002] Transition metal dichalcogenides (TMDs) have a similar structure to graphene, but have their own unique photoelectric properties. Due to the existence of their bandgap, they also have better mobility values ​​and on-off ratios. They are used in optoelectronic devices and P-N Junction semiconductors have outstanding performance, so they are favored by many researchers. In recent years, two-dimensional transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS 2 ), tungsten disulfide (WS 2 ), molybdenum diselenide (MoSe 2 ) and tungsten diselenide (WSe 2 ), etc., especially in terms of metallicity, semiconductivity and superconductivity. At the same time, the bandgap and properties of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More