The invention discloses a preparation method of a low dielectric constant thin film layer. When the vacuum degree in a furnace body is smaller than 10-30 Pa, a radio-frequency power supply and a matcher are started; after a second mass flow meter is started, exhaust nitrogen used for emptying residual gas in the furnace body is fed in; octamethylcyclotetrasiloxane and cyclohexane are mixed uniformly and injected into a pressure-proof stainless steel kettle, a baffle valve is shut down manually, bubbling nitrogen and inert gas are injected respectively from a first gas inlet pipe and a second gas inlet pipe, sequentially flow through a first pressure-proof gas mixing tank, the pressure-proof stainless steel kettle and a first nozzle and are fed into the furnace body, accordingly the octamethylcyclotetrasiloxane and the cyclohexane are brought into the furnace body, and the octamethylcyclotetrasiloxane, the cyclohexane, the bubbling nitrogen and the inert gas deposit on the surface of a substrate to form the thin film layer under the plasma condition. According to the method, the dielectric constant value of a thin film is adjusted and controlled conveniently and precisely, the thin film layer with a low dielectric constant value is obtained, chemical components of the thin film layer are more uniform, the thin film layer has good thermostability and hardness, and flatness of the thin film is improved.