Ultralow-friction silicon-aluminum double-element mixed amorphous carbon film preparing method

A binary doping, ultra-low friction technology, applied in ion implantation plating, gaseous chemical plating, coating, etc., to achieve good wear resistance, good elasticity, and reduce the friction coefficient

Active Publication Date: 2013-06-19
LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

On the other hand, thin film materials with ultra-low coefficient of friction have significant application prospects in microelectromechanical systems (MEMS) and bearings, but the realization of ultra-low coefficient of friction is still very challenging, and it can continue to appear for a long time Thin film materials with ultra-low coefficient of friction are even more lackluster

Method used

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Experimental program
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Effect test

Embodiment 1

[0023] Clean the substrate: First, ultrasonically clean the monocrystalline silicon wafer (N100 type silicon wafer) with absolute ethanol and acetone solution for 10 minutes respectively, dry it with nitrogen and place it in the reaction chamber of the magnetron sputtering deposition system; vacuumize: use high-efficiency The molecular pump evacuates the reaction chamber; substrate surface treatment: when the vacuum degree is higher than 5×10 -4 Pa, pass argon gas in the deposition chamber, and use argon (Ar) plasma to sputter and clean the single crystal silicon wafer for about 10 -20min, to remove the oxide layer and other impurities on the surface; Deposition: Methane gas and argon gas are mixed in the ratio of 1:7 and then passed into the reaction chamber, and the working pressure is opened under the condition of 0.5-1.2Pa RF power supply (power 400-700W), jointly sputtering a mixed target composed of aluminum and silicon (the area ratio is A 铝 / A 硅 =1 / 8), and at the sam...

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PUM

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Abstract

The invention discloses a silicon-aluminum double-element mixed amorphous carbon film preparing method with a radio frequency magnetron sputtering physical vapor deposition technology. An ultralow-friction silicon-aluminum double-element mixed amorphous carbon film has nano hardness of 9-15 Gpa and good tribology performance, the minimum friction coefficient can reach 0.0083, and the number of reciprocating times continuously in the ultralow friction coefficient can be 18000. The film is even and compact and is firmly combined with base materials, abrasion resistance is good, the film can be widely used in a magnetic memory optical disk, a micro electronic mechanical system (MEMS) and automobile parts and other fields.

Description

technical field [0001] The invention relates to a method for preparing a silicon-aluminum binary doped amorphous carbon film with excellent tribological properties by using radio frequency magnetron sputtering physical vapor deposition technology. Background technique [0002] Due to its high hardness, extremely low friction coefficient, excellent wear resistance, excellent chemical inertness and good thermal stability, amorphous carbon film materials are widely used in machinery, tribology, corrosion protection, aviation, etc. Aerospace and other fields have broad application prospects. [0003] At present, the main methods for preparing doped amorphous carbon thin film materials include physical vapor deposition, electrochemical deposition, chemical vapor deposition and so on. Among these methods, physical vapor deposition is particularly widely used in industry. Usually, in a DC sputtering physical vapor deposition system, if the conductivity of the target is poor, posi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/34C23C16/26C23C16/50
Inventor 郝俊英刘小强
Owner LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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