Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing graphene and graphene prepared thereby

A graphene and reaction technology, applied in the field of graphene, can solve the problems of growing graphene, etc., achieve the effect of simple operation, promotion of large-scale industrial production, and cost reduction

Inactive Publication Date: 2013-09-18
UNIV OF SCI & TECH OF CHINA
View PDF0 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problem of growing graphene at low temperature, the first object of the present invention is to provide a method for preparing high-quality graphene at low temperature by chemical vapor deposition

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing graphene and graphene prepared thereby
  • Method for preparing graphene and graphene prepared thereby
  • Method for preparing graphene and graphene prepared thereby

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Embodiment 1 (solid source PMMA powder)

[0026] a) Sonicate the copper foil with acetone and deionized water for 3 times, 5 minutes each time.

[0027] b) Put the copper foil into the quartz tube of a tube furnace, heat it to 1000°C, treat it for 30min under the environment of 100sccm hydrogen and 1.8Torr, and slowly cool down to the reaction temperature. Do 5 sets of comparative experiments, the reaction temperatures are 1000°C, 800°C, 700°C, 480°C, 400°C respectively.

[0028] c) Reaction: Heat the solid carbon source PMMA pre-placed at the gas inlet to 200°C. Adjust the hydrogen gas to 50 sccm and the air pressure to 8-15 Torr.

[0029] d) After growing for 45 minutes, stop the heating of the solid-state source and quickly cool down to room temperature.

[0030] figure 2 It is the optical photo, Raman signal, light transmittance signal and scanning electron microscope picture of the graphene that embodiment 1 makes. Such as figure 2 As shown in -a, it is an ...

Embodiment 2

[0031] Embodiment 2 (liquid source benzene)

[0032] a) Sonicate the copper foil with acetone and deionized water for 3 times, 5 minutes each time.

[0033] b) Put the copper foil into the quartz tube of the tube furnace, heat it to 1000°C, treat it for 30min under the environment of 100sccm hydrogen and 1.8Torr, and slowly cool down to room temperature.

[0034] c) Reaction: Place the test tube containing benzene at the gas inlet port. Heat the tube furnace to the reaction temperature, and do two sets of comparative experiments, the reaction temperatures are 480°C and 300°C respectively. Adjust the hydrogen gas to 50 sccm and the air pressure to 8-15 Torr.

[0035] d) Grow for 10 minutes to 30 minutes, and quickly cool down to room temperature.

[0036] image 3 It is the Raman signal and the scanning electron microscope picture of the graphene that is made in embodiment 2. Such as image 3As shown in -a, they are the Raman images of graphene obtained at 480°C and 300°C...

Embodiment 3

[0037] Embodiment 3 (solid source p-terphenyl)

[0038] a) Sonicate the copper foil with acetone and deionized water for 3 times, 5 minutes each time.

[0039] b) Put the copper foil into the quartz tube of the tube furnace, heat it to 1000°C, treat it for 30min under the environment of 100sccm hydrogen and 1.8 Torr, and slowly cool down to the reaction temperature of 250°C.

[0040] c) Reaction: Heat the solid carbon source p-terphenyl pre-placed at the gas inlet to 200°C. Adjust the hydrogen gas to 50 sccm and the air pressure to 8-15 Torr.

[0041] d) Grow for 10 minutes to 30 minutes, and quickly cool down to room temperature.

[0042] Figure 4 It is the Raman signal, scanning electron microscope and scanning tunneling microscope picture of the graphene that is made in embodiment 3. Such as Figure 4 As shown in -a, it is the scanning electron microscope picture of the obtained graphene, which can be seen as a continuous single-layer film. The inset is the Raman diag...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for preparing graphene. The method comprises the following steps of: (1) pretreating a substrate with catalysis at high temperature; (2) slowly cooling the substrate obtained from step (1); and (3) then introducing an organic carbon source into a reaction system to obtain graphene, wherein the reaction conditions of the reaction system are as follows: the temperature is 220-480 DEG C, the hydrogen flow is 20-100sccm, the growth time lasts 10-60min, and the reaction pressure is 1-50Torr. The invention relates to a method for preparing graphene at high temperature by utilizing a chemical vapor deposition method, and the growth of high-quality graphene can be successfully realized at low temperature by adopting solid-state or liquid-state organic matters as an effective carbon source. The improved method is simple, convenient and effective to operate, compared with the traditional graphene growing technology carried out at 1000 DEG C, the method has the advantage that the cost for industrially producing graphene can be greatly lowered, and the step for large-scale industrialized production of high-quality graphene can be promoted.

Description

technical field [0001] The invention relates to the technical field of graphene preparation, in particular to a method for preparing graphene by chemical vapor deposition and the prepared graphene. Background technique [0002] Graphene is a two-dimensional hexagonal lattice composed of a single layer of sp2 hybridized carbon atoms. Since its experimental discovery in 2004, it has attracted intense research interest from the scientific community. Graphene exhibits a linear energy dispersion relationship, that is, the energy E is proportional to the momentum k. The interaction of charge carriers in graphene with the periodic lattice excites a new kind of quasiparticle. In the low-energy region, this quasiparticle can be produced by an effective light speed of 10 6 m / s described by the relativistic Dirac equation, known as massless Dirac fermions. It has been found experimentally that two-dimensional Dirac fermions exhibit many peculiar properties. Due to its remarkable pr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B31/04C01B32/184
Inventor 曾长淦张振宇范晓东李占成崔振浩
Owner UNIV OF SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com