Czochralski silicon monocrystal growth furnace and method for filling silicon melts continuously

Abstract

The invention discloses a czochralski silicon monocrystal growth furnace and a method for filling silicon melts continuously. In the czochralski silicon monocrystal growth furnace, a monocrystal lifting part comprises a lifting head, a slave furnace chamber, an isolating valve, a furnace body, an upper part heat-preserving cover, a heater, a crucible lifting rotary mechanism, a graphite crucible, a crucible, a steel wire rope, a chuck and the like; a melt continuously-filled part comprises a small furnace cylinder, a charging bin, the isolating valve, a charging and weighing device, a continuously-melted tube, a heat-insulating body, the heater, a melt temperature stabilizing tube and the like; and by the czochralski silicon monocrystal growth furnace, the continuous melting of polycrystalline silicon and the continuous growth of silicon monocrystal are realized. In the czochralski silicon monocrystal growth furnace, a spacing interval of opening a mono-crystal furnace for two times adjacently can be prolonged by over 30 days, the size of the crucible can be reduced effectively, the consumption and oxygen content of the czochralski silicon monocrystal growth method can be reduced effectively, and the production efficiency can be improved.

Description

technical field [0001] The invention relates to the field of Czochralski silicon single crystal growth, in particular to a Czochralski silicon single crystal growth furnace and method for continuously filling silicon melt. Background technique [0002] The composition of the Czochralski silicon single crystal growth furnace is as follows: figure 1 As shown, it mainly consists of four parts: [0003] (1) Furnace body: including quartz crucible 7, graphite crucible 8 (used to support the quartz crucible), heater 9 and heat insulator 10, furnace body 16, heat preservation cover 20, these in the furnace body 16 affect heat transfer and temperature distribution The parts are generally called the thermal field. The thermal field is generally characterized by the outer diameter of the quartz crucible used, and the quartz crucible is generally expressed by its outer diameter. Now commonly used are 18 inches, 20 inches, 22 inches, 24 inches, and 28 inches. , 32-inch quartz crucible...

AI Technical Summary

Problems solved by technology

Due to the large size of the furnace body and the frequent heating and cooling process during the crystal growth process, the current Czochralski silicon single crystal growth method consumes a lot of energy and has low efficiency. The power consumption per kilogram of silicon single crystal is that of the zone melting method. 4-5 times, the output of the machine is one-third of that of the zone melting method

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