41 results about "Amorphous boron" patented technology

The application discloses a fluorine-containing acrylic ester ternary random copolymer modifier, a preparation method of modified boron powder and application of the fluorine-containing acrylic ester ternary random copolymer modifier, and particularly relates to the following steps: (1) mixing three fluorine-containing acrylic esters with different fluorocarbon chain lengths at normal temperature, adding a free radical initiator to obtain a fluorine-containing acrylic ester mixture; (2) adding the fluorine-containing acrylic ester mixture into a flask containing a solvent and dodecyl mercaptan in batches under N2 atmosphere, and performing a free radical polymerization reaction by increasing temperature; (3) purifying the product obtained in the step (2) by using methanol as a washing agent, and vacuum drying to obtain a fluorine-containing methacrylic ester ternary random copolymer; and the modifier is used for modifying boron powder, a fluorine-containing coating layer with high fluorine density is constructed on the surface of the boron powder by using the random copolymer of the three fluorine-containing acrylic esters with different fluorocarbon chain lengths, and the problems of easy agglomeration, low flowability, ignition difficulty and low combustion efficiency of amorphous boron powder as a fuel component in a boron-containing fuel-rich propellant are solved.

The application discloses a surface-coated and bulk-gradient co-doped sodium ion battery positive electrode material and a preparation method and a sodium ion battery thereof, and belongs to the technical field of sodium ion batteries. The sodium ion battery positive electrode material comprises a layered transition metal oxide and a coating layer coated on the surface of the layered transition metal oxide; the layered transition metal oxide is a nickel-iron-manganese-based layered transition metal oxide, and the coating layer is an amorphous boron oxide coating layer; the chemical formula of the surface-coated and bulk-gradient co-doped sodium ion battery positive electrode material is Na(Ni 1 / 3 Fe 1 / 3 Mn 1 / 3 ) x B y M z O2, 0.9≤x≤0.98, 0.01≤y<0.2, 0.01≤z<0.1, and x+y+z=1, and M is selected from W or Nb; wherein the doping concentration of boron elements and metal M elements presents a gradient decreasing trend from the surface layer to the inside along the radial direction; the surface boron oxide coating and the bulk-gradient doping of boron elements and metal M elements are simultaneously realized; the surface coating layer effectively reduces the interface side reaction, and the bulk-gradient doping stabilizes the crystal structure from the inside; and the two synergistically act to jointly inhibit the structural degradation in the cycle process.

Composite material part The present invention relates to a part (1) made of composite material comprising a fibrous reinforcement of ceramic or carbon wires (3), a ceramic matrix (5) and an interphase (7) covering the wires and located between the latter and the matrix, the part being characterized in that the interphase comprises a first layer (71) of amorphous boron nitride in contact with the wires and a second layer (72) of crystalline boron nitride covering the first layer. Figure for abstract: Fig. 1.

The invention provides a lithium-boron alloy, a preparation method thereof and application of the lithium-boron alloy as a thermal battery negative electrode material, and belongs to the technical field of thermal battery negative electrode materials. The lithium-boron alloy is prepared from the following raw materials: 55-64 parts of battery-grade metal lithium, 2-4 parts of magnesium powder and 34-42 parts of modulated boron powder, wherein the modulated boron powder is prepared from fine crystal boron powder, a boron-containing compound and amorphous boron powder. The particle size of the prepared boron powder is smaller, and a more compact alloy framework is formed by the prepared boron powder and the pre-alloying of the prepared boron powder because a carbon element or a silicon element in the prepared boron powder can form a framework with lithium and is interwoven with a lithium-boron framework to form a firmer framework structure, so that the structure of the alloy is more stable. The lithium-boron alloy is used as a thermal battery negative electrode material, after the assembled thermal battery is activated for 2 hours, the battery voltage can still be kept at 75% or above of the peak voltage, the discharging is stable in a discharging test, and the pulse performance is good.

The invention belongs to the technical field of energy storage and conversion, discloses amorphous boron-phosphorus co-doped cobalt-molybdenum sulfide as well as a preparation method and application thereof, and aims to solve the technical problem of relatively poor electrochemical performance of CoMoS4. The preparation method comprises the following steps: adding cobalt salt, molybdenum salt, urea and boron phosphate into deionized water to obtain a solution A; foamed nickel is placed in the solution A, and a boron-phosphorus co-doped cobalt-molybdenum precursor is obtained through a hydrothermal reaction; and placing the boron-phosphorus co-doped cobalt-molybdenum precursor in an aqueous solution of a vulcanizing agent, and carrying out a secondary hydrothermal reaction to obtain BP-CoMoS4. Boron-phosphorus co-doping can promote formation of an amorphous region structure, more active sites are exposed, and the conductivity of the CoMoS4 material is improved. The amorphous BP-CoMoS4 is low in price, simple and convenient to prepare and easy to apply and industrialize on a large scale, and a new strategy is provided for developing high-performance bimetallic sulfide which is simultaneously suitable for a supercapacitor and an alkaline DMFC anode catalyst.

The application discloses a preparation method of a core-shell structure nickel-aluminum-boron composite fuel, and comprises the following steps: S1, target material treatment: selecting a target material with a proper size, polishing the target material before use, then performing ultrasonic cleaning on the target material with anhydrous ethanol and acetone for 10 minutes, and placing the target material into a sputtering chamber after drying; S2, powder laying: grinding boron powder, and then uniformly laying the boron powder on a glass substrate with a proper size; S3, vacuumizing and pretreating a reaction chamber; S4, sputtering coating; and S5, detecting the modified amorphous boron coated with aluminum. The method is simple, controllable, safe, low in cost and suitable for industrialized scale production. The composite boron powder obtained by the method has an amorphous boron powder as a core and a nickel-aluminum coating layer, has a short ignition delay time, is high in combustion efficiency, and can be directly used as a boron-based energetic material.

An amorphous silicon layer or amorphous boron layer can be deposited on a substrate using one or more silicon or boron-containing precursors, respectively. Radical species are provided from a plasma source or from a controlled reaction chamber atmosphere to convert the amorphous silicon layer to a doped silicon layer with composition tunability. An initiation layer is deposited on one or more semiconductor device structures having a dielectric layer over an electrically conductive layer. The initiation layer may be conformally deposited by a CVD-based process and may comprises amorphous silicon, doped silicon, amorphous boron, or doped boron.

The invention relates to a boron-containing composite particle and a preparation method thereof. The boron-containing composite particle comprises hydrofluorinated amorphous boron, fluororubber and an oxidizing agent, according to the hydrofluorinated amorphous boron, amorphous boron is activated by adopting a hydrofluorination process; the boron-containing composite particles are prepared from the following raw materials in parts by weight: 100 parts of hydrofluorinated amorphous boron, 10-55 parts of an oxidizing agent and 3-8 parts of fluororubber, and fluorine and hydrogen are adsorbed on the surface of the hydrofluorinated amorphous boron by amorphous boron through a hydrofluorination process. It is determined through experiments that the explosion reaction complete rate of boron in the boron-containing composite particles reaches 80% or above, the combustion heat of the boron-containing composite particles is remarkably improved, and the combustion heat is not lower than 30 MJ / kg; and the boron-containing composite particles have the advantage of low sensitivity, and the mechanical sensitivity of the boron-containing composite particles is lower than 40%.

Provided are a hard mask including an amorphous boron nitride film and a method of fabricating the hard mask, and a patterning method using the hard mask. The hard mask is provided on a substrate and used for a process of patterning the substrate, and the hard mask includes an amorphous boron nitride film.

The invention provides a boron aggregate for a microgravity combustion experiment as well as a preparation method and application of the boron aggregate. The agglomerate is formed by agglomerating and dispersing high-purity amorphous boron on ethyl acetate and then drying, and is fixed on the annular structure of the tungsten filament in a spherical shape, the porosity is 48.19 + / -5%, the particle sizes comprise 5 mm and 3 mm, and the surface is coated with a paraffin coating layer with the thickness of 0.12 mm, so that the agglomerate can be effectively prevented from being contacted with air and water vapor to be oxidized during storage, and the service life of the agglomerate is prolonged. And the fixation of the boron aggregate and the tungsten filament structure is ensured. The preparation process of the aggregate comprises the three steps of tungsten filament supporting structure manufacturing, original boron aggregate manufacturing and paraffin surface coating, an obtained boron aggregate sample can be fixed to a gas phase flame burner through annular structures at the two ends, and the aggregate has the outstanding advantages of being stable in storage, rapid in ignition, stable in combustion and the like; the device can effectively meet the application requirements of the space microgravity experiment on sample transportation safety, space positioning accuracy and stable and splashing-free combustion, and provides reference for efficient preparation of boron aggregates in the microgravity combustion experiment.

The invention relates to the field of ceramic materials, and discloses a ceramic-metal material composite brazing method with an in-situ synthesis reaction, which comprises the following steps: pretreating a ceramic surface and a metal surface to be welded; brazing filler metal is preset between the welding faces of the to-be-welded ceramic and the to-be-welded metal, and the brazing filler metal is AgCuTi welding flux added with amorphous boron powder; in the vacuum brazing process, the Ti element and boron powder are subjected to an in-situ reaction, and a TiB ceramic reinforced phase is generated. The technical problem of joint cracking caused by low interface bonding strength and mismatched thermal expansion coefficients in traditional ceramic-metal connection is solved. According to the method, the mixed powder intermediate layer containing the active elements is preset on the to-be-connected interface of the ceramic and the metal, the intermediate layer is induced to be subjected to the in-situ chemical reaction through heating, the composite reaction product with high strength and gradient thermal expansion performance is generated, and metallurgical bonding and stress buffering integration of the ceramic and the metal is achieved; the mechanical property and the service stability of the joint are obviously improved.

The invention relates to the technical field of metal composite materials, and discloses steel for a steel-copper composite base material and a manufacturing method thereof.The manufacturing method comprises the steps that a layer of amorphous boron film is deposited on the to-be-composited surface of the steel to serve as an interface reaction triggering layer; and overlapping the steel plate with the film and the copper plate, and heating to 650-800 DEG C while applying the pressure of 1-5 MPa to carry out heat-preservation compounding. Components such as phosphorus, nickel, antimony and rare earth are set in the steel and have a synergistic effect with an amorphous boron film trigger layer in the manufacturing method, an instantaneous liquid phase is formed in situ on a steel-copper interface, and high-strength metallurgical bonding at low temperature and low pressure is achieved. The prepared steel-copper composite board is high in interface bonding strength and low in interface thermal resistance and contact resistance, and the technical problems that in a traditional process, brittle phases are likely to be generated on an interface, and the process conditions are harsh are effectively solved.

The invention discloses a rewiring layer transmission line based on amorphous boron nitride and a preparation method thereof, and the preparation method comprises the steps: preparing for cleaning, depositing a first dielectric layer of the amorphous boron nitride, forming a photoresist mask, depositing a conductive material to prepare a transmission line conductor, removing the mask, and depositing a second dielectric layer of the amorphous boron nitride. And obtaining the redistribution layer transmission line structure coated by the amorphous boron nitride medium. According to the structure, amorphous boron nitride serves as a core dielectric layer to replace traditional SiO2, BCB and other media, lower insertion loss is achieved under the same thickness, high-frequency transmission loss is greatly reduced, the link transmission performance is improved, the preparation technology is compatible with an existing semiconductor micro-nano machining technology, the structure can be applied to an RDL layer of a heterogeneous three-dimensional integrated structure, and the performance of the RDL layer is improved. And the high-frequency and high-speed signal interconnection requirement is met.

The application discloses a core-shell structure perovskite catalyst containing amorphous boron-oxygen layer, which takes a crystal perovskite (such as LaAlO3) as a carrier core, makes boron species react with the perovskite surface through simple physical mixing with a boron source and one-step heat treatment, thereby in-situ forming a uniform amorphous borate (LaAlBO x ) layer on the surface of the carrier, and constructing a unique "core-shell" structure catalyst (B x LAO). The shell layer is stably connected with the carrier through a strong M-O-B chemical bond (M is La, Al and the like in the perovskite), thereby firmly anchoring the active boron species and effectively inhibiting volatilization and loss of the active boron species at a high reaction temperature. The application has the advantages of simple process, good repeatability, strong designability of the used perovskite, low price of the boron source, and excellent performance of the obtained catalyst in a propane oxidative dehydrogenation reaction, and provides a new strategy with broad application prospect for developing a high-efficiency and stable propane dehydrogenation catalyst.

This invention discloses a method for manufacturing reinforced platinum alloy workpieces with enhanced weldability, belonging to the field of metallic materials technology. The method includes: vacuum melting pure platinum and additives into an alloy ingot; powdering the ingot using a plasma rotating electrode and mixing it with amorphous boron powder; obtaining a dense billet through spark plasma oxidation sintering and hot isostatic pressing; obtaining a reinforced platinum sheet through hot forging and cold rolling; processing the sheet into workpieces; and then performing fiber laser welding with simultaneous ultrasonic waves. After welding, the workpiece undergoes another hot isostatic pressing treatment. This invention significantly improves the high-temperature strength and creep resistance of platinum alloys by generating nanoscale boride and oxide dispersed phases in situ. Simultaneously, it utilizes ultrasonic waves and post-weld hot isostatic pressing to synergistically control welding defects and microstructure coarsening, enabling the room temperature and high-temperature tensile strength and elongation of the weld zone to reach over 80% of the base material's performance, far exceeding the 50%~60% of traditional welding methods, thus meeting the stringent requirements of high-end applications for consistent overall workpiece performance.

The present invention relates to a Cu2Se-doped MgB2 bulk material. This superconducting material is prepared by solid-phase sintering a mixture of boron powder, magnesium powder, and a Cu2Se dopant. The present invention also relates to a method for preparing the Cu2Se-doped MgB2 bulk material, comprising the following steps: preparing raw materials: magnesium powder with a purity of 99.9% and a particle size of 40 μm; amorphous boron powder with a purity of 99% and a particle size of 0-20 μm; and cuprous selenide powder with a purity of 99.5%, wherein the molar ratio of the boron powder to the magnesium powder is 2:1, and the weight of the cuprous selenide dopant powder accounts for 5% to 30% of the total powder weight; weighing the raw materials in proportion, and thoroughly grinding the powder in an agate mortar for 1 hour to form a uniform mixed powder; placing the resulting uniform mixed powder into a mold and pressing it into a bulk material at a pressure of 6-10 MPa; and placing the bulk material into a ceramic ark and sintering it at high temperature in a vacuum tube furnace with an inert gas Ar flowing. The Cu2Se-doped MgB2 bulk material and the preparation method thereof of the present invention effectively improve the current-carrying performance of the MgB2 superconductor.

The invention discloses a cutting tool coated with a composite carbon film, a manufacturing method and a cutting method. The cutting tool comprises a tool base material and the hard composite carbon film formed on the surface of the tool base material. The hard composite carbon film sequentially comprises a strong adhesion layer, an ultrahigh-hardness layer and an anti-adhesion layer from the cutter base material side to the outside, the strong adhesion layer is amorphous boron nitride or amorphous silicon carbide, the ultrahigh-hardness layer is diamond-like carbon, and the anti-adhesion layer is a carbon-based film; a micro-nano texture is formed on the surface of the hard composite carbon film and on at least one front cutter face of the base material, the micro-nano texture comprises a micro-groove array extending in the preset direction, and a non-zero included angle is formed between the extending direction of the micro-groove array and the outflow direction of cutting main on the front cutter face. The hard carbon film cutting tool is protected against damage to the cutting tool and a workpiece, and the cutting tool has durability, high precision and high process stability.

A substrate processing structure according to one aspect of the present invention comprises: a low dielectric thin film formed as an insulator for a metal film formed on a substrate; and an amorphous boron nitride thin film that is adhered to the low dielectric thin film and formed as a diffusion barrier to prevent metal diffusion from the metal film.

Electrically insulating materials and / or structures for implementation in semiconductor devices, such as transistors, are disclosed herein. The exemplary electrically insulating layer is a dielectric layer having a laminated structure containing boron and nitrogen. The boron and nitrogen containing laminated structure includes at least one crystalline boron nitride layer (e.g., hexagonal boron nitride layer) and at least one amorphous boron nitride layer. In some embodiments, a dielectric layer is implemented in a transistor. For example, the transistor includes a gate spacer and / or an internal spacer, and the dielectric layer is a gate spacer, an internal spacer, or both. In another example, the dielectric layer is a contact etch stop layer, which may be formed over the transistor. In another example, the dielectric layer is a gate isolation layer between a gate of a transistor and a gate of another transistor, or forms part of the gate isolation layer. The embodiment of the invention also relates to a semiconductor device structure, a forming method thereof and a transistor.

The invention relates to ammonium perchlorate activated boron particles and a preparation method thereof.According to the ammonium perchlorate activated boron particles and the preparation method thereof, the structural characteristics of amorphous boron are fully utilized, an oxidizing agent is promoted to crystallize in pores in the amorphous boron, the reaction activity and energy of boron are improved, the oxidizing agent is crystallized in the amorphous boron through three means, and the reaction efficiency is improved. The preparation method comprises the following steps of: firstly, designing ammonium perchlorate, dopamine and perfluoropolyether, regulating the pH value by adopting sodium hydroxide, selectively crystallizing and depositing the ammonium perchlorate in pores in amorphous boron by introducing the perfluoropolyether, directionally crystallizing the ammonium perchlorate in the pores in the amorphous boron, and further inhibiting the oxidizing agent from adhering to the outside of the boron; 2, the crystallization rate is controlled by adopting cooling crystallization and controllable volatilization modes, so that the internal limited space can be crystallized; and thirdly, the oxidizing agent is prevented from crystallizing outside the amorphous boron in a slow stirring manner. The boron-oxygen reactivity can be remarkably improved, the boron-oxygen reactivity is low, and the mechanical sensitivity of the ammonium perchlorate activated boron particles is lower than 40%.

The invention discloses a mixed lithium battery positive electrode material and a preparation method and application thereof, and belongs to the technical field of new energy materials. The hybrid lithium battery positive electrode material provided by the invention comprises first particles with Dv50 being d1 and second particles with Dv50 being d2, wherein d1 / d2 = (2-6): 1; each first particle comprises a first inner core and a first coating layer coating the surface of the first inner core; each second particle comprises a second inner core and a second coating layer coating the surface of the second inner core; the second inner core has a hollow structure; the first core and the second core are doped with an element M, and the doping amount of M in the second core is greater than the doping amount of M in the first core; the first coating layer and the second coating layer independently contain an island-shaped coating and a fast ion conductor; the island-like coating contains an amorphous boron compound. The hybrid lithium battery positive electrode material provided by the invention has comprehensive performance advantages. The invention also provides a preparation method and application of the mixed lithium battery positive electrode material.

Electrically insulating materials and / or structures are disclosed herein for implementation in semiconductor devices, such as transistors. An exemplary electrically insulating layer is a dielectric layer having a boron-and-nitrogen containing laminate structure. The boron-and-nitrogen containing laminate structure includes at least one crystalline boron nitride layer (e.g., a hexagonal boron nitride layer) and at least one amorphous boron nitride layer. In some embodiments, the dielectric layer is implemented in a transistor. For example, the transistor includes a gate spacer and / or an inner spacer, and the dielectric layer is the gate spacer, the inner spacer, or both. In another example, the dielectric layer is a contact etch stop layer, which may be formed over the transistor. In another example, the dielectric layer is, or forms a portion of, a gate isolation layer between a gate of the transistor and a gate of another transistor.

This invention discloses a low-cost, high-calorific-value boron-aluminum-based composite fuel and its preparation method. The low-cost, high-calorific-value boron-aluminum-based composite fuel, by mass percentage, consists of 75%–90% Al powder with a particle size of 1–50 μm, 0%–10% D... 50 =1~3μm B powder and 10%~20% D 50 Composed of ultrafine B4C powder with a particle size of ≤5μm. This invention prepares boron-aluminum based composite fuels with specific component ratios by partially or completely replacing amorphous boron powder with ultrafine B4C powder, using ultrasonic dispersion or mechanical ball milling techniques. This achieves high calorific value while effectively controlling raw material costs.

The application discloses a preparation method of a TiB2 reinforced titanium matrix composite, and relates to the technical field of materials, and comprises the following steps: vacuum drying treatment is performed on titanium powder, amorphous boron powder and rare earth element powder respectively; the titanium powder, the amorphous boron powder and the rare earth element powder after the vacuum drying treatment are ball milled to obtain mixed powder; the mixed powder is compacted, spark plasma sintered and cooled to obtain the TiB2 reinforced titanium matrix composite; wherein the spark plasma sintering adopts at least three-stage gradient heating; the first stage is to heat from room temperature to 600 DEG C to 700 DEG C; the second stage is to heat from 600 DEG C to 700 DEG C to 850 DEG C to 950 DEG C; and the third stage is to heat from 850 DEG C to 950 DEG C to 1000 DEG C to 1100 DEG C. The TiB2 reinforced titanium matrix composite is prepared by adopting a combination mode of in-situ reaction and SPS rapid sintering, the amorphous boron powder and the titanium powder generate TiB2 particles in-situ at a lower temperature, and the problems of TiB2 particle agglomeration and poor interface bonding in an external adding method are effectively solved.

The present invention belongs to the technical field of diamond composite materials, and discloses a high-efficiency grinding boron-containing high-entropy alloy bonded diamond composite material, a preparation method, and an application thereof. The composite material is composed of 75-95 vol.% of a boron-containing high-entropy alloy binder phase and 5-25 vol.% of diamond abrasive particles; the binder phase powder used is prepared by mechanical alloying of iron powder, cobalt powder, chromium powder, nickel powder, and amorphous boron powder for doping. The composite material has the following advantages: the present invention uses amorphous boron powder with higher activity as a raw material, which can shorten the manufacturing cycle and accurately determine the boron content. The prepared composite material has excellent interface bonding and friction and wear properties; compared with doping with metal elements with large atomic radius, boron doping avoids the aggravation of segregation phase, and boron solid solution strengthening more effectively improves the wear resistance of the diamond composite material and the grinding efficiency of ceramic balls. It can be used to prepare tools such as diamond cutter wheels or saw blades for efficiently processing hard materials such as ceramics.

This text discloses electrically insulating materials and / or structures for implementation in semiconductor devices, such as transistors. An exemplary electrically insulating layer is a dielectric layer comprising a boron- and nitrogen-containing laminate structure. The boron- and nitrogen-containing laminate structure comprises at least one crystalline boron nitride layer (for example, a hexagonal boron nitride layer) and at least one amorphous boron nitride layer. In some embodiments, the dielectric layer is implemented within a transistor. For example, the transistor has a gate spacer and / or an internal spacer, and the dielectric layer is the gate spacer, the internal spacer, or both. In another example, the dielectric layer is a contact etch stop layer that can be formed over the transistor.In another example, the dielectric layer is a gate isolation layer between a gate of the transistor and a gate of another transistor, or forms a section of a gate isolation layer between a gate of the transistor and a gate of another transistor.

The present application is suitable for the technical field of boron phosphide polycrystal synthesis, and provides a method for synthesizing boron phosphide polycrystal blocks by one-step method with amorphous boron source and phosphorus source, comprising the following steps: fully ball-milling and mixing amorphous boron powder and amorphous phosphorus powder; pressing the raw materials into a cylinder; placing the cylinder in a high-pressure assembly, and then placing the high-pressure assembly into the cavity of a cubic press, and heating under the conditions of a pressure of 2-5 GPa and a temperature of 950-1350 DEG C for 60 min. The present application also provides a boron phosphide polycrystal block and its application in preparing high-heat-dissipation devices. The present application adopts a domestic cubic press to synthesize boron phosphide polycrystal ceramic sintered bodies by one-step method under high temperature and high pressure, and has the advantages of low cost, short time, simple process, low pressure and high yield. The synthesized samples have the characteristics of simple process, high hardness and high thermal conductivity, and have very wide application potential, and can be used in super-hard inorganic compounds, refractory materials, high-heat-dissipation devices or ships, and can prevent the corrosion of seawater on the hull and parts.

The present invention provides a lightweight, high-strength, high-modulus Al-Mg-based composite material and a preparation method thereof. The Al-Mg-based composite material includes an aluminum matrix and MgAl2O4 particles and AlB2 particles generated by an in-situ reaction; the MgAl2O4 particles are distributed along the grain boundaries of the aluminum matrix; and the AlB2 particles are uniformly distributed on the aluminum matrix. The preparation method is as follows: preparing raw materials according to the following mass percentages: 69.8-91.9% of industrial pure aluminum powder, 6.0-20.0% of Al-50Mg alloy powder, 2.0-10.0% of amorphous boron oxide powder, and 0.1-0.2% of zirconium oxide powder; low-speed ball milling of industrial pure aluminum powder and Al-50Mg alloy powder and high-speed ball milling of amorphous boron oxide powder and zirconium oxide powder; using a cold isostatic press to press the resulting mixture into a preform, and heat-treating it to obtain. The material of the present invention has the advantages of low density, high elastic modulus and strength, and a simple preparation process.

The invention discloses a repairing paste for a tap hole of a submerged arc furnace and a preparation method thereof in the technical field of metallurgical refractory materials, and the method comprises the following steps: mixing silicon carbide aggregate, metal silicon powder, chromium-doped calcium aluminum chromate, titanium zirconium boron solid solution and other components in a kneading machine step by step, and adding a liquid asphalt binder for wet mixing; and carrying out compression molding and cooling to obtain the repairing paste. Wherein the chromium-doped calcium aluminochromate is prepared from calcium carbonate, aluminum oxide and chromium oxide through ball milling and high-temperature calcination; the titanium-zirconium-boron solid solution is prepared by ball-milling and mixing zirconium powder, titanium powder and amorphous boron powder and then directly hot-pressing and sintering at high temperature. According to the repairing paste, two newly designed inorganic modified compounds are introduced into a traditional repairing paste matrix, so that the high-temperature strength, the slag corrosion resistance and the thermal shock resistance of the material are remarkably improved, and the service life and the maintenance period of the taphole of the submerged arc furnace are prolonged.

The invention belongs to the technical field of preparation methods of metal nitride coatings, and particularly relates to a Cu interconnection diffusion impervious layer and a preparation method thereof, the Cu interconnection diffusion impervious layer is a TiBN diffusion impervious layer, the TiBN diffusion impervious layer is a TiBN composite film of an amorphous boron wrapped nanocrystalline structure, and the nanocrystalline structure is TiN. According to the preparation method of the Cu interconnection diffusion barrier layer, a proper amount of B atoms are introduced, a compact TiBN composite film with amorphous phase boron wrapping nanocrystals is formed, the excellent thermal stability and interface bonding performance are achieved, mutual diffusion of Cu and Si is effectively restrained under the high-temperature condition, meanwhile, the low resistivity is achieved, high conductivity is kept, and the Cu interconnection diffusion barrier layer is prepared. And a novel diffusion barrier layer material with high reliability is provided for advanced microelectronic devices.