56 results about "Amorphous boron" patented technology

An amorphous silicon layer or an amorphous boron layer may be deposited on a substrate using one or more silicon-containing or boron-containing precursors, respectively. A free radical species is provided from a plasma source or from a controlled reaction chamber atmosphere to convert the amorphous silicon layer into a doped silicon layer with compositionally adjustable properties. An initial layer is deposited on one or more semiconductor device structures having a dielectric layer over a conductive layer. The initial layer may be conformally deposited by a CVD-based process and may include amorphous silicon, doped silicon, amorphous boron, or doped boron.

The invention relates to a thermal detector comprising: - a reading substrate (10) comprising a reading circuit; - an absorbent membrane (40) comprising a thermometer transducer (44) electrically connected to the reading circuit, - anchoring pillars (20) and holding arms (30) for: keeping the absorbent membrane (40) suspended above the reading substrate (10); thermally insulating the absorbent membrane from the reading substrate (10); and electrically connecting the thermometer transducer (44) to the reading circuit; the holding arms (30) being formed from a stack of at least one portion (51b; 53b) of an insulating thin film (51;53) made of a thermally insulating material, and at least one portion (52b) of a conductive thin film (52) made from an electrically conductive material. The insulating thin film (51;53) is made of amorphous boron.

The present invention provides a self-propagating tunnel kiln device and a method for preparing amorphous boron powder thereof, the self-propagating tunnel kiln device comprising: an automatic feeding system, a self-propagating reaction section, a cooling section, a ventilation system, a pneumatic separation pressure relief valve, a multi-electrode igniter, a strong convection inert gas injection system and a circulating cooling system; the automatic feeding system is connected to the feeding end of the self-propagating reaction section; the discharging end of the self-propagating reaction section is connected to the feeding end of the cooling section; the ventilation system is arranged in the self-propagating reaction section and is connected to the self-propagating reaction section; the pneumatic separation pressure relief valve is arranged on one side of the discharging end of the self-propagating reaction section, and the pneumatic separation pressure relief valve connects the self-propagating reaction section with the external environment; the multi-electrode igniter is arranged on the inner side of the bottom of the self-propagating reaction section; the strong convection inert gas injection system is arranged around the outside of the cooling section and is connected to the cooling section; the circulating cooling system is arranged inside the cooling section. The process of producing amorphous boron powder according to the present invention has strong continuity and low energy consumption.

The invention provides a method for preparing a high-explosive hot-pressing composite explosive from aluminum-boron alloy microspheres. Comprising the following steps: step 1, preparing spherical submicron aluminum-boron alloy microspheres; and 2, preparing the high-explosion-heat composite explosive column. According to the preparation method, the metal aluminum powder and the amorphous boron powder are alloyed through a high-energy mechanical ball milling method under the action of long-time and violent mechanical force, the aluminum-boron alloy microspheres with the high sphericity degree are prepared, the microcosmic grain size of the metal aluminum powder and the boron powder is reduced to the nanometer size, and therefore the aluminum-boron alloy microspheres with the high sphericity degree are obtained. The aluminum-boron alloy microspheres with the nanoscale microcosmic grain size have very low ignition temperature and very high combustion speed, so that the aluminum-boron alloy microspheres can sufficiently release most heat in the transient detonation process of the high explosive, and finally, the actually measured explosion heat of the composite explosive is very close to the theoretically calculated explosion heat. In addition, the spherical structure of the aluminum-boron alloy microspheres is very beneficial to charging, and is more beneficial to reducing the mechanical sensitivity of the composite explosive.

A method of forming a boron nitride film includes: (a) forming a first film of amorphous boron nitride on an underlying region of a substrate, wherein (a) includes (a1) supplying a first process gas containing a borazine compound and a first plasma chemical species to the substrate; and (b) forming a second film of hexagonal boron nitride on the first film, wherein (b) includes (b1) supplying a second process gas containing a borazine compound and a second plasma chemical species to the substrate.

The application discloses a fluorine-containing acrylic ester ternary random copolymer modifier, a preparation method of modified boron powder and application of the fluorine-containing acrylic ester ternary random copolymer modifier, and particularly relates to the following steps: (1) mixing three fluorine-containing acrylic esters with different fluorocarbon chain lengths at normal temperature, adding a free radical initiator to obtain a fluorine-containing acrylic ester mixture; (2) adding the fluorine-containing acrylic ester mixture into a flask containing a solvent and dodecyl mercaptan in batches under N2 atmosphere, and performing a free radical polymerization reaction by increasing temperature; (3) purifying the product obtained in the step (2) by using methanol as a washing agent, and vacuum drying to obtain a fluorine-containing methacrylic ester ternary random copolymer; and the modifier is used for modifying boron powder, a fluorine-containing coating layer with high fluorine density is constructed on the surface of the boron powder by using the random copolymer of the three fluorine-containing acrylic esters with different fluorocarbon chain lengths, and the problems of easy agglomeration, low flowability, ignition difficulty and low combustion efficiency of amorphous boron powder as a fuel component in a boron-containing fuel-rich propellant are solved.

The application discloses a surface-coated and bulk-gradient co-doped sodium ion battery positive electrode material and a preparation method and a sodium ion battery thereof, and belongs to the technical field of sodium ion batteries. The sodium ion battery positive electrode material comprises a layered transition metal oxide and a coating layer coated on the surface of the layered transition metal oxide; the layered transition metal oxide is a nickel-iron-manganese-based layered transition metal oxide, and the coating layer is an amorphous boron oxide coating layer; the chemical formula of the surface-coated and bulk-gradient co-doped sodium ion battery positive electrode material is Na(Ni 1 / 3 Fe 1 / 3 Mn 1 / 3 ) x B y M z O2, 0.9≤x≤0.98, 0.01≤y<0.2, 0.01≤z<0.1, and x+y+z=1, and M is selected from W or Nb; wherein the doping concentration of boron elements and metal M elements presents a gradient decreasing trend from the surface layer to the inside along the radial direction; the surface boron oxide coating and the bulk-gradient doping of boron elements and metal M elements are simultaneously realized; the surface coating layer effectively reduces the interface side reaction, and the bulk-gradient doping stabilizes the crystal structure from the inside; and the two synergistically act to jointly inhibit the structural degradation in the cycle process.

Composite material part The present invention relates to a part (1) made of composite material comprising a fibrous reinforcement of ceramic or carbon wires (3), a ceramic matrix (5) and an interphase (7) covering the wires and located between the latter and the matrix, the part being characterized in that the interphase comprises a first layer (71) of amorphous boron nitride in contact with the wires and a second layer (72) of crystalline boron nitride covering the first layer. Figure for abstract: Fig. 1.

The invention provides a lithium-boron alloy, a preparation method thereof and application of the lithium-boron alloy as a thermal battery negative electrode material, and belongs to the technical field of thermal battery negative electrode materials. The lithium-boron alloy is prepared from the following raw materials: 55-64 parts of battery-grade metal lithium, 2-4 parts of magnesium powder and 34-42 parts of modulated boron powder, wherein the modulated boron powder is prepared from fine crystal boron powder, a boron-containing compound and amorphous boron powder. The particle size of the prepared boron powder is smaller, and a more compact alloy framework is formed by the prepared boron powder and the pre-alloying of the prepared boron powder because a carbon element or a silicon element in the prepared boron powder can form a framework with lithium and is interwoven with a lithium-boron framework to form a firmer framework structure, so that the structure of the alloy is more stable. The lithium-boron alloy is used as a thermal battery negative electrode material, after the assembled thermal battery is activated for 2 hours, the battery voltage can still be kept at 75% or above of the peak voltage, the discharging is stable in a discharging test, and the pulse performance is good.

The invention belongs to the technical field of energy storage and conversion, discloses amorphous boron-phosphorus co-doped cobalt-molybdenum sulfide as well as a preparation method and application thereof, and aims to solve the technical problem of relatively poor electrochemical performance of CoMoS4. The preparation method comprises the following steps: adding cobalt salt, molybdenum salt, urea and boron phosphate into deionized water to obtain a solution A; foamed nickel is placed in the solution A, and a boron-phosphorus co-doped cobalt-molybdenum precursor is obtained through a hydrothermal reaction; and placing the boron-phosphorus co-doped cobalt-molybdenum precursor in an aqueous solution of a vulcanizing agent, and carrying out a secondary hydrothermal reaction to obtain BP-CoMoS4. Boron-phosphorus co-doping can promote formation of an amorphous region structure, more active sites are exposed, and the conductivity of the CoMoS4 material is improved. The amorphous BP-CoMoS4 is low in price, simple and convenient to prepare and easy to apply and industrialize on a large scale, and a new strategy is provided for developing high-performance bimetallic sulfide which is simultaneously suitable for a supercapacitor and an alkaline DMFC anode catalyst.

The application discloses a preparation method of a core-shell structure nickel-aluminum-boron composite fuel, and comprises the following steps: S1, target material treatment: selecting a target material with a proper size, polishing the target material before use, then performing ultrasonic cleaning on the target material with anhydrous ethanol and acetone for 10 minutes, and placing the target material into a sputtering chamber after drying; S2, powder laying: grinding boron powder, and then uniformly laying the boron powder on a glass substrate with a proper size; S3, vacuumizing and pretreating a reaction chamber; S4, sputtering coating; and S5, detecting the modified amorphous boron coated with aluminum. The method is simple, controllable, safe, low in cost and suitable for industrialized scale production. The composite boron powder obtained by the method has an amorphous boron powder as a core and a nickel-aluminum coating layer, has a short ignition delay time, is high in combustion efficiency, and can be directly used as a boron-based energetic material.

An amorphous silicon layer or amorphous boron layer can be deposited on a substrate using one or more silicon or boron-containing precursors, respectively. Radical species are provided from a plasma source or from a controlled reaction chamber atmosphere to convert the amorphous silicon layer to a doped silicon layer with composition tunability. An initiation layer is deposited on one or more semiconductor device structures having a dielectric layer over an electrically conductive layer. The initiation layer may be conformally deposited by a CVD-based process and may comprises amorphous silicon, doped silicon, amorphous boron, or doped boron.

The invention relates to a boron-containing composite particle and a preparation method thereof. The boron-containing composite particle comprises hydrofluorinated amorphous boron, fluororubber and an oxidizing agent, according to the hydrofluorinated amorphous boron, amorphous boron is activated by adopting a hydrofluorination process; the boron-containing composite particles are prepared from the following raw materials in parts by weight: 100 parts of hydrofluorinated amorphous boron, 10-55 parts of an oxidizing agent and 3-8 parts of fluororubber, and fluorine and hydrogen are adsorbed on the surface of the hydrofluorinated amorphous boron by amorphous boron through a hydrofluorination process. It is determined through experiments that the explosion reaction complete rate of boron in the boron-containing composite particles reaches 80% or above, the combustion heat of the boron-containing composite particles is remarkably improved, and the combustion heat is not lower than 30 MJ / kg; and the boron-containing composite particles have the advantage of low sensitivity, and the mechanical sensitivity of the boron-containing composite particles is lower than 40%.

A doped amorphous boron nitride film and a method for stabilizing an amorphous boron nitride film are provided. The doped amorphous boron nitride film comprises amorphous boron nitride and a doping agent, and the doping agent comprises K, Ba, Sr, Rb, Sc, Na, In or La. In one embodiment, the doped amorphous boron nitride film has (i) a stable configuration measured by over-bump energy (i.e., less than 100 meV per atom over bump), (ii) an over-bump energy in the amorphous phase lower than in the crystalline phase, and (iii) a dielectric constant of 4 or less. The method for stabilizing an amorphous boron nitride film includes doping an amorphous boron nitride film with a dopant including K, Ba, Sr, Rb, Sc, Na, In, or La.

Provided are a hard mask including an amorphous boron nitride film and a method of fabricating the hard mask, and a patterning method using the hard mask. The hard mask is provided on a substrate and used for a process of patterning the substrate, and the hard mask includes an amorphous boron nitride film.

The invention provides a boron aggregate for a microgravity combustion experiment as well as a preparation method and application of the boron aggregate. The agglomerate is formed by agglomerating and dispersing high-purity amorphous boron on ethyl acetate and then drying, and is fixed on the annular structure of the tungsten filament in a spherical shape, the porosity is 48.19 + / -5%, the particle sizes comprise 5 mm and 3 mm, and the surface is coated with a paraffin coating layer with the thickness of 0.12 mm, so that the agglomerate can be effectively prevented from being contacted with air and water vapor to be oxidized during storage, and the service life of the agglomerate is prolonged. And the fixation of the boron aggregate and the tungsten filament structure is ensured. The preparation process of the aggregate comprises the three steps of tungsten filament supporting structure manufacturing, original boron aggregate manufacturing and paraffin surface coating, an obtained boron aggregate sample can be fixed to a gas phase flame burner through annular structures at the two ends, and the aggregate has the outstanding advantages of being stable in storage, rapid in ignition, stable in combustion and the like; the device can effectively meet the application requirements of the space microgravity experiment on sample transportation safety, space positioning accuracy and stable and splashing-free combustion, and provides reference for efficient preparation of boron aggregates in the microgravity combustion experiment.

The invention relates to a method for producing a thin layer of pure amorphous boron by thermal CVD deposition. For this, a carrier gas is used that is inert to the B2H6 dissociation reaction and the deposition temperature is less than or equal to 550°C. Figure for abstract: Fig. 2A

The invention relates to the field of ceramic materials, and discloses a ceramic-metal material composite brazing method with an in-situ synthesis reaction, which comprises the following steps: pretreating a ceramic surface and a metal surface to be welded; brazing filler metal is preset between the welding faces of the to-be-welded ceramic and the to-be-welded metal, and the brazing filler metal is AgCuTi welding flux added with amorphous boron powder; in the vacuum brazing process, the Ti element and boron powder are subjected to an in-situ reaction, and a TiB ceramic reinforced phase is generated. The technical problem of joint cracking caused by low interface bonding strength and mismatched thermal expansion coefficients in traditional ceramic-metal connection is solved. According to the method, the mixed powder intermediate layer containing the active elements is preset on the to-be-connected interface of the ceramic and the metal, the intermediate layer is induced to be subjected to the in-situ chemical reaction through heating, the composite reaction product with high strength and gradient thermal expansion performance is generated, and metallurgical bonding and stress buffering integration of the ceramic and the metal is achieved; the mechanical property and the service stability of the joint are obviously improved.

The invention relates to the technical field of metal composite materials, and discloses steel for a steel-copper composite base material and a manufacturing method thereof.The manufacturing method comprises the steps that a layer of amorphous boron film is deposited on the to-be-composited surface of the steel to serve as an interface reaction triggering layer; and overlapping the steel plate with the film and the copper plate, and heating to 650-800 DEG C while applying the pressure of 1-5 MPa to carry out heat-preservation compounding. Components such as phosphorus, nickel, antimony and rare earth are set in the steel and have a synergistic effect with an amorphous boron film trigger layer in the manufacturing method, an instantaneous liquid phase is formed in situ on a steel-copper interface, and high-strength metallurgical bonding at low temperature and low pressure is achieved. The prepared steel-copper composite board is high in interface bonding strength and low in interface thermal resistance and contact resistance, and the technical problems that in a traditional process, brittle phases are likely to be generated on an interface, and the process conditions are harsh are effectively solved.

The invention discloses a rewiring layer transmission line based on amorphous boron nitride and a preparation method thereof, and the preparation method comprises the steps: preparing for cleaning, depositing a first dielectric layer of the amorphous boron nitride, forming a photoresist mask, depositing a conductive material to prepare a transmission line conductor, removing the mask, and depositing a second dielectric layer of the amorphous boron nitride. And obtaining the redistribution layer transmission line structure coated by the amorphous boron nitride medium. According to the structure, amorphous boron nitride serves as a core dielectric layer to replace traditional SiO2, BCB and other media, lower insertion loss is achieved under the same thickness, high-frequency transmission loss is greatly reduced, the link transmission performance is improved, the preparation technology is compatible with an existing semiconductor micro-nano machining technology, the structure can be applied to an RDL layer of a heterogeneous three-dimensional integrated structure, and the performance of the RDL layer is improved. And the high-frequency and high-speed signal interconnection requirement is met.

The application discloses a core-shell structure perovskite catalyst containing amorphous boron-oxygen layer, which takes a crystal perovskite (such as LaAlO3) as a carrier core, makes boron species react with the perovskite surface through simple physical mixing with a boron source and one-step heat treatment, thereby in-situ forming a uniform amorphous borate (LaAlBO x ) layer on the surface of the carrier, and constructing a unique "core-shell" structure catalyst (B x LAO). The shell layer is stably connected with the carrier through a strong M-O-B chemical bond (M is La, Al and the like in the perovskite), thereby firmly anchoring the active boron species and effectively inhibiting volatilization and loss of the active boron species at a high reaction temperature. The application has the advantages of simple process, good repeatability, strong designability of the used perovskite, low price of the boron source, and excellent performance of the obtained catalyst in a propane oxidative dehydrogenation reaction, and provides a new strategy with broad application prospect for developing a high-efficiency and stable propane dehydrogenation catalyst.

This invention discloses a method for manufacturing reinforced platinum alloy workpieces with enhanced weldability, belonging to the field of metallic materials technology. The method includes: vacuum melting pure platinum and additives into an alloy ingot; powdering the ingot using a plasma rotating electrode and mixing it with amorphous boron powder; obtaining a dense billet through spark plasma oxidation sintering and hot isostatic pressing; obtaining a reinforced platinum sheet through hot forging and cold rolling; processing the sheet into workpieces; and then performing fiber laser welding with simultaneous ultrasonic waves. After welding, the workpiece undergoes another hot isostatic pressing treatment. This invention significantly improves the high-temperature strength and creep resistance of platinum alloys by generating nanoscale boride and oxide dispersed phases in situ. Simultaneously, it utilizes ultrasonic waves and post-weld hot isostatic pressing to synergistically control welding defects and microstructure coarsening, enabling the room temperature and high-temperature tensile strength and elongation of the weld zone to reach over 80% of the base material's performance, far exceeding the 50%~60% of traditional welding methods, thus meeting the stringent requirements of high-end applications for consistent overall workpiece performance.

The present invention relates to a Cu2Se-doped MgB2 bulk material. This superconducting material is prepared by solid-phase sintering a mixture of boron powder, magnesium powder, and a Cu2Se dopant. The present invention also relates to a method for preparing the Cu2Se-doped MgB2 bulk material, comprising the following steps: preparing raw materials: magnesium powder with a purity of 99.9% and a particle size of 40 μm; amorphous boron powder with a purity of 99% and a particle size of 0-20 μm; and cuprous selenide powder with a purity of 99.5%, wherein the molar ratio of the boron powder to the magnesium powder is 2:1, and the weight of the cuprous selenide dopant powder accounts for 5% to 30% of the total powder weight; weighing the raw materials in proportion, and thoroughly grinding the powder in an agate mortar for 1 hour to form a uniform mixed powder; placing the resulting uniform mixed powder into a mold and pressing it into a bulk material at a pressure of 6-10 MPa; and placing the bulk material into a ceramic ark and sintering it at high temperature in a vacuum tube furnace with an inert gas Ar flowing. The Cu2Se-doped MgB2 bulk material and the preparation method thereof of the present invention effectively improve the current-carrying performance of the MgB2 superconductor.

The present invention discloses a method for preparing nano lanthanum hexaboride by hydrous lanthanum chloride-assisted microwave solid-phase combustion, which belongs to the technical field of nanopowder preparation. According to the molar ratio of 10:96:(50-75):1:6, hydrous lanthanum nitrate, amorphous boron powder, urea, ammonium nitrate and hydrous lanthanum chloride are weighed respectively and mixed. The mixture is placed in a microwave reactor and undergoes a solid-phase combustion reaction under microwave irradiation. After the solid-phase combustion reaction product is pickled, washed with water, separated and dried, nano lanthanum hexaboride with an average particle size of 50 nm is obtained. The present invention utilizes the strong absorption of microwave by hydrous lanthanum chloride during the solid-phase microwave combustion process to quickly generate lanthanum oxychloride to wrap the target product, promote the complete boride reaction and refine the product crystal grains, and quickly obtain highly dispersed and uniformly sized nano lanthanum hexaboride in one step. This method has good industrial application prospects.

The invention discloses a cutting tool coated with a composite carbon film, a manufacturing method and a cutting method. The cutting tool comprises a tool base material and the hard composite carbon film formed on the surface of the tool base material. The hard composite carbon film sequentially comprises a strong adhesion layer, an ultrahigh-hardness layer and an anti-adhesion layer from the cutter base material side to the outside, the strong adhesion layer is amorphous boron nitride or amorphous silicon carbide, the ultrahigh-hardness layer is diamond-like carbon, and the anti-adhesion layer is a carbon-based film; a micro-nano texture is formed on the surface of the hard composite carbon film and on at least one front cutter face of the base material, the micro-nano texture comprises a micro-groove array extending in the preset direction, and a non-zero included angle is formed between the extending direction of the micro-groove array and the outflow direction of cutting main on the front cutter face. The hard carbon film cutting tool is protected against damage to the cutting tool and a workpiece, and the cutting tool has durability, high precision and high process stability.

A substrate processing structure according to one aspect of the present invention comprises: a low dielectric thin film formed as an insulator for a metal film formed on a substrate; and an amorphous boron nitride thin film that is adhered to the low dielectric thin film and formed as a diffusion barrier to prevent metal diffusion from the metal film.

Electrically insulating materials and / or structures for implementation in semiconductor devices, such as transistors, are disclosed herein. The exemplary electrically insulating layer is a dielectric layer having a laminated structure containing boron and nitrogen. The boron and nitrogen containing laminated structure includes at least one crystalline boron nitride layer (e.g., hexagonal boron nitride layer) and at least one amorphous boron nitride layer. In some embodiments, a dielectric layer is implemented in a transistor. For example, the transistor includes a gate spacer and / or an internal spacer, and the dielectric layer is a gate spacer, an internal spacer, or both. In another example, the dielectric layer is a contact etch stop layer, which may be formed over the transistor. In another example, the dielectric layer is a gate isolation layer between a gate of a transistor and a gate of another transistor, or forms part of the gate isolation layer. The embodiment of the invention also relates to a semiconductor device structure, a forming method thereof and a transistor.

The invention relates to ammonium perchlorate activated boron particles and a preparation method thereof.According to the ammonium perchlorate activated boron particles and the preparation method thereof, the structural characteristics of amorphous boron are fully utilized, an oxidizing agent is promoted to crystallize in pores in the amorphous boron, the reaction activity and energy of boron are improved, the oxidizing agent is crystallized in the amorphous boron through three means, and the reaction efficiency is improved. The preparation method comprises the following steps of: firstly, designing ammonium perchlorate, dopamine and perfluoropolyether, regulating the pH value by adopting sodium hydroxide, selectively crystallizing and depositing the ammonium perchlorate in pores in amorphous boron by introducing the perfluoropolyether, directionally crystallizing the ammonium perchlorate in the pores in the amorphous boron, and further inhibiting the oxidizing agent from adhering to the outside of the boron; 2, the crystallization rate is controlled by adopting cooling crystallization and controllable volatilization modes, so that the internal limited space can be crystallized; and thirdly, the oxidizing agent is prevented from crystallizing outside the amorphous boron in a slow stirring manner. The boron-oxygen reactivity can be remarkably improved, the boron-oxygen reactivity is low, and the mechanical sensitivity of the ammonium perchlorate activated boron particles is lower than 40%.

The invention discloses a mixed lithium battery positive electrode material and a preparation method and application thereof, and belongs to the technical field of new energy materials. The hybrid lithium battery positive electrode material provided by the invention comprises first particles with Dv50 being d1 and second particles with Dv50 being d2, wherein d1 / d2 = (2-6): 1; each first particle comprises a first inner core and a first coating layer coating the surface of the first inner core; each second particle comprises a second inner core and a second coating layer coating the surface of the second inner core; the second inner core has a hollow structure; the first core and the second core are doped with an element M, and the doping amount of M in the second core is greater than the doping amount of M in the first core; the first coating layer and the second coating layer independently contain an island-shaped coating and a fast ion conductor; the island-like coating contains an amorphous boron compound. The hybrid lithium battery positive electrode material provided by the invention has comprehensive performance advantages. The invention also provides a preparation method and application of the mixed lithium battery positive electrode material.

Electrically insulating materials and / or structures are disclosed herein for implementation in semiconductor devices, such as transistors. An exemplary electrically insulating layer is a dielectric layer having a boron-and-nitrogen containing laminate structure. The boron-and-nitrogen containing laminate structure includes at least one crystalline boron nitride layer (e.g., a hexagonal boron nitride layer) and at least one amorphous boron nitride layer. In some embodiments, the dielectric layer is implemented in a transistor. For example, the transistor includes a gate spacer and / or an inner spacer, and the dielectric layer is the gate spacer, the inner spacer, or both. In another example, the dielectric layer is a contact etch stop layer, which may be formed over the transistor. In another example, the dielectric layer is, or forms a portion of, a gate isolation layer between a gate of the transistor and a gate of another transistor.