A seed crystal holder for growing high-quality silicon carbide crystals

A silicon carbide and crystal technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of reducing the quality and yield of the wafer, and achieve the suppression of backside evaporation, the improvement of crystal quality and yield, and the elimination of flat hexagons. The effect of defects

Active Publication Date: 2012-02-01
BEIJING TIANKE HEDA SEMICON CO LTD
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Problems solved by technology

This defect is a killer defect, its formation will drastically reduce wafer quality and yield

Method used

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  • A seed crystal holder for growing high-quality silicon carbide crystals
  • A seed crystal holder for growing high-quality silicon carbide crystals
  • A seed crystal holder for growing high-quality silicon carbide crystals

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Embodiment Construction

[0023] The seed crystal support structure of the present invention will be described in detail below with reference to the accompanying drawings.

[0024] figure 2 It is a schematic diagram of the seed crystal support structure commonly used to grow SiC crystals at present. The graphite cover 1 is processed from Sangao graphite, and the flatness of its inner surface 8 is better than 10 μm. The seed crystal 5 is adhered to the inner surface 8 of the graphite cap 1 by means of an adhesive 4 . Due to factors such as poor machining accuracy and uneven bonding of the adhesive 4 , some pores 10 inevitably exist between the back surface 9 of the seed crystal and the inner surface 8 of the graphite cap 1 . The difference in thermal conductivity between the pores 10 and the binder 4 after high-temperature carbonization will lead to uneven temperature distribution on the rear surface 9 of the seed crystal. When the crystal grows, there is a certain temperature gradient in the growin...

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Abstract

The invention provides a seed crystal support for growing high-quality silicon carbide crystals by a physical vapor transport method. The seed crystal support includes a graphite base and a dense film layer arranged on the surface of the graphite base. The dense film layer is stable and dense at high temperature, eliminating the defects caused by the porosity of the graphite substrate. Due to the compactness of the film layer, the vapor generated by the evaporation on the back of the crystal is inhibited from escaping from the pores of the graphite substrate, eliminating the planar hexagonal defects caused by the back evaporation during the crystal growth process, and greatly improving the quality and yield of silicon carbide crystals .

Description

technical field [0001] The invention belongs to the field of crystal growth, in particular to a seed crystal support for growing high-quality silicon carbide crystals. Background technique [0002] Wide bandgap semiconductor materials represented by silicon carbide (SiC) and gallium nitride (GaN) are the third-generation semiconductors after silicon (Si) and gallium arsenide (GaAs). Compared with Si and GaAs traditional semiconductor materials, SiC has excellent properties such as high thermal conductivity, high breakdown field strength, high saturation electron drift rate and high bonding energy, and has great potential in high temperature, high frequency, high power and radiation resistant devices. Application prospect. In addition, due to the similar lattice constant and thermal expansion coefficient of SiC and GaN, it also has extremely broad application prospects in the field of optoelectronic devices. [0003] At present, the most effective method for growing SiC cry...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/00C30B29/36
Inventor 陈小龙彭同华杨慧王文军倪代秦王皖燕
Owner BEIJING TIANKE HEDA SEMICON CO LTD
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