A seed treatment method for growing high-quality silicon carbide crystals

A processing method and technology for silicon carbide seeds, which are applied in the field of seed crystal processing for growing high-quality silicon carbide crystals, can solve problems such as reducing the quality and yield of wafers, prevent backside evaporation, improve crystal quality and yield, and eliminate flat surfaces. Effects of Hexagonal Defects

Active Publication Date: 2019-02-19
BEIJING TIANKE HEDA SEMICON CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This defect is a killer defect, its formation will drastically reduce wafer quality and yield

Method used

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  • A seed treatment method for growing high-quality silicon carbide crystals
  • A seed treatment method for growing high-quality silicon carbide crystals
  • A seed treatment method for growing high-quality silicon carbide crystals

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] A piece of 4H-SiC seed crystal with a diameter of 100mm, the C surface is selected as the crystal growth surface, and the Si surface is the back side of the growth surface, that is, the coating coverage surface. Deposit a 0.2um thick yttrium oxide coating on the Si surface of 4H-SiC by magnetron sputtering, and then place the coated seed crystal and carbon powder in a protective atmosphere of Ar gas at 1 atmosphere and heat it to 2100°C Hold for 30 minutes to allow the carbon powder and yttrium oxide to react. After the reaction, the coating is a mixed coating of yttrium silicon carbide and yttrium carbide. Fix the seed crystal with the coating on the graphite support with an adhesive; then install the graphite support and the crucible together, place it in a silicon carbide single crystal furnace, and carry out the growth of silicon carbide crystals, and finally obtain 4H-SiC crystals one. Compared with the conventional seed crystal processing method, there is no obv...

Embodiment 2

[0028]A piece of 6H-SiC seed crystal with a diameter of 76.2mm, the Si surface is selected as the crystal growth surface, and the C surface is the back surface, that is, the coating coverage surface. A yttrium silicon carbon coating with a thickness of 0.5um was deposited on the Si surface of 6H-SiC by chemical vapor deposition. Fix the seed crystal with the coating on the graphite support with an adhesive; then install the graphite support and the crucible together, place them in a silicon carbide single crystal furnace, and grow silicon carbide crystals to finally obtain 6H-SiC crystals one. Compared with the conventional seed crystal structure, there is no obvious sign of evaporation on the back of the crystal grown by this seed crystal treatment method. When the crystal is cut into a wafer, it is found that there is no planar hexagonal cavity defect inside the wafer, and the quality and yield of the silicon carbide wafer have been significantly improved.

Embodiment 3

[0030] A piece of 4H-SiC seed crystal with a diameter of 150 mm, the C surface is selected as the crystal growth surface, and the Si surface is the back side of the growth surface, that is, the coating coverage surface. A yttrium carbide coating with a thickness of 0.4um was deposited on the Si surface of 4H-SiC by magnetron sputtering. Subsequent silicon carbide crystal growth is performed on the seed crystal obtained by the seed crystal treatment method to obtain one 4H-SiC crystal. Compared with the conventional seed crystal structure, there is no obvious sign of evaporation on the back of the crystal grown by the seed crystal structure. When the crystal is cut into a wafer, it is found that there is no planar hexagonal cavity defect inside the wafer, and the quality and yield of silicon carbide wafers have been significantly improved.

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Abstract

The invention provides a seed crystal processing method for growing high-quality silicon carbide crystals. According to the method, compact silicon carbon yttrium or yttrium carbide film coatings are formed on the back of the growth face of a seed crystal to inhibit back evaporation of the seed crystal, and the high-quality silicon carbide crystals are grown. The distillation process of the backs of the silicon carbide crystals is directly inhibited due to the high temperature resistance of the coatings and the specialty of the material composition, the flat hexagonal defect caused by back evaporation in the crystal growth process is effectively eliminated, the quality of the silicon carbide crystals is greatly improved, and the yield of the silicon carbide crystals is greatly raised.

Description

technical field [0001] The invention belongs to the field of crystal growth, and in particular relates to a seed crystal treatment method for growing high-quality silicon carbide crystals. Background technique [0002] Compared with traditional semiconductor materials represented by Si and GaAs, SiC has more advantages in terms of operating temperature, radiation resistance, and high breakdown voltage resistance. As the most mature wide-bandgap semiconductor material, SiC has the advantages of high thermal conductivity, high breakdown field strength, high saturation electron drift rate and high bonding energy. Its excellent performance can meet the requirements of modern electronic technology for high temperature, high frequency, high New requirements for power, high voltage, and radiation resistance are therefore considered to be one of the most promising materials in the field of semiconductor materials. [0003] At present, the most effective method for growing SiC cryst...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/36C30B23/00
CPCC30B23/00C30B29/36
Inventor 刘春俊王波赵宁
Owner BEIJING TIANKE HEDA SEMICON CO LTD
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