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Preparation method of graphene conductive film

A conductive film, graphene technology, applied in the direction of graphene, nano-carbon, etc., can solve the problem of high production cost, and achieve the effect of reducing damage, shortening preparation time, and reducing production cost

Active Publication Date: 2013-11-13
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the problems such as the high production cost of preparing graphene film on the existing copper substrate, the invention provides a kind of preparation method of graphene conductive film, comprising:

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  • Preparation method of graphene conductive film

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Embodiment Construction

[0020] The technical solution of the present invention will be further described below with reference to the drawings and embodiments.

[0021] In the embodiment of the present invention, the copper film obtained by the electrodeposition method on the graphite surface is used as the growth substrate, instead of the growth substrate of the metal copper foil, and the growth of graphene is realized by the CVD method under high temperature conditions; at the same time, the graphite electrode is used as the cathode. The electrochemical corrosion method is used to remove the metal copper, and the copper corrosion and the preparation of the copper film on the graphite surface are carried out simultaneously, which not only greatly reduces the production cost, but also improves the production efficiency.

[0022] See figure 1 with figure 2 , The embodiment of the present invention provides a method for preparing a graphene conductive film. The method includes the following steps:

[0023] St...

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Abstract

The invention discloses a preparation method of a graphene conductive film, belonging to the technical field of semiconductor material preparation. The method comprises the following steps of: depositing metal copper on the surface of a graphite electrode by an electrochemical method; growing graphene on the copper surface by a chemical vapour deposition method; pasting a heat release adhesive tape on the graphene surface, and stripping a copper film from the surface of a graphite substrate to obtain an adhesive tape / graphene / copper composite film; by taking the composite film as an anode and the graphite as a cathode, corroding by an electrochemical method to remove copper at the outermost layer of the composite film to obtain an adhesive tape / graphene composite film; and transferring the graphene on the composite film to a transparent substrate to finally obtain a graphene conductive film. The preparation method of the graphene conductive film, disclosed by the invention, not only can effectively reduce the damage of graphene, but also shortens the preparation time and reduces the cost by synchronously finishing the preparation of the copper film and the corrosion of copper, and can be applied to the preparation of a large-area graphene conductive film.

Description

Technical field [0001] The invention relates to the technical field of semiconductor material preparation, in particular to a method for preparing a graphene conductive film with high transparency. Background technique [0002] In 2004, Professor Geim of the University of Manchester in the United Kingdom prepared graphene for the first time [K.S.Novoselov, A.K.Geim, S.V.Morozov, D.Jiang, Y.Zhang, S.V.Dubonos,I.V.Grigorieva,A.A.Firsov,Science2004,306,666.]. Graphene is a two-dimensional hexagonal honeycomb structure composed of a single layer of carbon atoms. The intrinsic electron mobility of graphene films can reach 200,000 cm at room temperature 2 / Vs, has excellent electrical properties [K.I.Bolotin, K.J.Sikes,Z.Jiang,M.Klima,G.Fudenberg,J.Hone,P.Kim,H.L.Stormer,Solid State Communications2008,146,351.]. In addition, graphene has a very high light transmittance in the entire visible light region. Studies have found that the light transmittance of single-layer graphene is close...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C01B32/186
Inventor 张大勇金智史敬元麻芃
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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