Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Self-supporting silicon carbide nanowire paper and preparing method thereof

A silicon carbide nanowire, self-supporting technology, applied in nanotechnology and other directions, can solve the problems of small area of ​​nanowire paper, and achieve the effects of low equipment requirements, adjustable thickness and simple operation

Active Publication Date: 2016-12-07
XI AN JIAOTONG UNIV
View PDF6 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Chen et al. prepared high-temperature-resistant flexible SiC nanowire paper by vacuum filtration. Li et al. prepared SiC nanowire paper that can be used to sense humidity changes by acetone compression. Their research showed that silicon carbide nanowire paper is in the Potential applications in high-temperature environments and electrical fields, but these two methods for preparing silicon carbide nanowires are two-step methods, and the area of ​​nanowire paper prepared in a single step is relatively small

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Self-supporting silicon carbide nanowire paper and preparing method thereof
  • Self-supporting silicon carbide nanowire paper and preparing method thereof
  • Self-supporting silicon carbide nanowire paper and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] In this example, a SiC nanowire paper with a thickness of 200 μm is prepared, and the specific steps are as follows:

[0034] 1) Using methyltrimethoxysilane (20wt.%) and dimethyldimethoxysilane (77.9wt.%) as raw materials, using nitric acid as a crosslinking catalyst (0.1wt.%), using a co-hydrolysis method ( The amount of water added is 2wt.%) to prepare a silica gel, and place the prepared gel in an oven at 80° C., keep it warm for 2 hours and dry to obtain a dry gel;

[0035] 2) Put 10g of xerogel into a graphite crucible with a graphite cover, and place it in an air pressure sintering furnace; pump the air pressure of the air pressure furnace to 0.05Pa, and then use high-purity argon (>99.9%) to decompress the air pressure in the furnace. Charge to 0.25MPa, raise the furnace temperature to 1320°C at a rate of 2°C / min and hold for one hour;

[0036] 3) As the furnace cools down to room temperature, a layer of green nanowire layer grows on the graphite substrate, and...

Embodiment 2

[0038] In this example, a SiC nanowire paper with a thickness of 50 μm is prepared, and the specific steps are as follows:

[0039] 1) Using methyltrimethoxysilane (60wt.%) and dimethyldimethoxysilane (24wt.%) as raw materials, nitric acid (2wt.%) as a cross-linking catalyst, co-hydrolysis (water addition 14wt.%) to prepare silica gel, and place the prepared gel in an oven at 100° C., keep it warm for 2 hours and dry to obtain a dry gel;

[0040] 2) Put 3g of xerogel into a graphite crucible with a graphite cover, and place it in an air pressure sintering furnace; pump the air pressure of the air pressure furnace to 0.01Pa, and then use high-purity argon (>99.9%) to depressurize the furnace Charge to 0.25MPa, raise the furnace temperature to 1450°C at a rate of 5°C / min and hold for one hour;

[0041] 3) As the furnace cools down to room temperature, a green nanowire layer grows on the graphite substrate, and the nanowire layer is peeled off from the graphite substrate to obtain...

Embodiment 3

[0043] In this example, a SiC nanowire paper with a thickness of 100 μm was prepared, and the specific steps were as follows:

[0044] 1) Using methyltrimethoxysilane (45wt.%) and dimethyldimethoxysilane (45wt.%) as raw materials, nitric acid (1wt.%) as a crosslinking catalyst, using co-hydrolysis (water addition The amount is 8wt.%) to prepare silica gel, and place the prepared gel in an oven at 120°C, keep it warm for 2 hours and dry to obtain a xerogel;

[0045] 2) Put 10g of xerogel into a graphite crucible with a graphite cover, and place it in an air pressure sintering furnace; pump the air pressure of the air pressure furnace to 0.008Pa, and then use high-purity argon (>99.9%) to depressurize the air pressure in the furnace. Charge to 0.15MPa, raise the furnace temperature to 1500°C at a rate of 10°C / min and hold for one hour;

[0046] 3) As the furnace cools down to room temperature, a layer of green nanowire layer grows on the graphite substrate, and the nanowire lay...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses self-supporting silicon carbide nanowire paper and a preparing method thereof, and belongs to the field of nanomateiral preparing and self-assembly technology thereof. The preparing method includes the following steps that methyl trimethoxy silane and dimethyl dimethoxysilane are used as raw materials, nitric acid is used as a crosslinking catalyst, a cohydrolysis method is adopted to prepare silica gel, and then the silica gel is dried to prepare xerogel; the xerogel is put into a graphite crucible with a graphite cover, the graphite crucible is put in an air pressure sintering furnace, air of the air pressure furnace is pumped until the air pressure is 0.1 Pa or below, the air pressure furnace is filled with high-purity argon, the air pressure furnace is heated to 1320-1500 DEG C at the speed of 2-10 DEG C / min, and the temperature is kept for 1 h; the product is cooled to the room temperature along with the furnace, a greyish-green nanowire layer can grow on a graphite substrate and is striped from the graphite substrate to prepare the self-supporting silicon carbide nanowire paper. Self-assembly of nanowires can be achieved in the process of nanowire growth, the thickness of the nanowire paper prepared through the method is adjustable, and the area of the nanowire paper prepared each time is large.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation and self-assembly, and in particular relates to a self-supporting silicon carbide nanowire paper and a preparation method thereof. Background technique [0002] Macroscale self-supporting nanowire papers usually have high porosity and interconnected nanopores while retaining the special electrical and optical properties of 1D nanomaterials. Therefore, it has broad application prospects in the fields of separation and ultrafiltration, as well as in the fields of optical and electronic industries. In the past decade, researchers have prepared nanowire papers with different materials with different functions, for example, carbon fiber membranes that can filter nanoparticles, cellulose nanofiber papers with excellent optical transparency, and excellent lithium storage. Performance of flexible transparent silicon nanowire paper, magnetic MnO 2 Nanowire paper, and transparent conducti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B31/36B82Y40/00
CPCC01P2006/12C01P2004/03C01P2002/85C01P2002/77
Inventor 王红洁苏磊牛敏马明波夏鸿雁史忠旗
Owner XI AN JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com