Organic field effect transistor with dielectric modification layer and preparation method thereof

Abstract

The invention relates to an organic field effect transistor with a dielectric modification layer, which belongs to the field of organic semiconductor devices and is characterized in that the organic field effect transistor comprises a grid electrode, a dielectric material layer, a zinc compound layer, an organic micromolecule self-assembly layer, an organic semiconductor material layer and a source-drain electrode, wherein the zinc compound layer is deposited by a solution method, and then, the organic micromolecule self-assembly layer is formed on the zinc compound layer by a self-assembly method, so the obtained zinc compound / organic micromolecule self-assembly layer is simultaneously used as the dielectric modification layer of the organic field effect transistor. When the dielectric layer of the organic field effect transistor is modified by the method, a device can show the current carrier mobility twice that of the ordinary device, and in addition, good light response characteristic can be given to the organic field effect transistor. The organic field effect transistor has wider application range in fields of organic photoelectric devices and multifunctional devices.

Description

technical field [0001] The invention belongs to the field of organic semiconductor devices, and relates to an organic field effect transistor with a dielectric modification layer and a preparation method. Background technique [0002] Organic field effect transistors have attracted a lot of attention because of their advantages such as simple preparation process, low cost, flexible devices, light weight, and thin thickness, and are widely used in active matrix displays, electronic paper, sensors, and radio frequency identification cards. and other fields. Organic field effect transistors are usually composed of gate electrodes, dielectric layers, organic semiconductor layers, source and drain electrodes and other units. Carrier mobility is one of the most important parameters to evaluate the performance of organic field effect transistors. On the one hand, the carrier mobility is determined by the properties of the organic semiconductor material itself; on the other hand, ...

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Problems solved by technology

[0005] The purpose of the present invention is to overcome the surface hydroxyl group of the dielectric material layer in the existing dielectric layer modification method to be introduced through the method of hydrophilic treatment, resulting in the uncertainty of the number of hydroxyl groups on the surface of the dielectric layer and the inhomogeneity of distribution, and then affecting To solve the problem of insufficient performance of the final device, a method for using a zinc compound as an interface modification layer of an organic semiconductor / dielectric layer is provided, through the introduction of the modification layer, the carrier mobility of the organic field effect transistor is improved and the device is simultaneously endowed with New function (i.e. photoresponse function)

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