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Boron doped diamond

a technology of boron and diamond, applied in the direction of polycrystalline material growth, crystal growth process, transportation and packaging, etc., can solve the problems of unreliable bulk doping, unfavorable uniform bulk doping, and inability to meet the requirements so as to improve the visual control, reduce the size of competing growth sectors, and increase the size of 100 growth sectors

Inactive Publication Date: 2007-04-26
ELEMENT SIX LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The invention provides a layer of single crystal boron doped diamond with uniform properties. The layer has a high degree of crystalline quality with a majority volume of at least 70% of the total volume of the layer. The layer has a thickness of at least 100 μm and a volume of at least 1 mm3. The layer contains nitrogen as a dopant and has a low concentration of nitrogen compared to the concentration of boron. The layer has a high mobility and low luminescent features. The invention also provides a method for producing the layer.

Problems solved by technology

To date, material of this type has not been available.
Other potentially shallow dopants reported in the literature to be under investigation include S, P, O, Li, but these are not yet available as reliable bulk dopants.
However, the incorporation of boron during synthesis is a very sensitive property of the particular growth sector.
The only currently reliable post growth treatment applicable to diamond is ion implantation, and this provides a method of producing layered diamond structures, but not uniform bulk doping.
Unfortunately residual damage (vacancies and interstitials) is always created under conditions of ion implantation.
This damage is impossible to remove completely, although annealing treatments can reduce it.
The damage leads to degraded charge carrier properties resulting from defect scattering and compensation of boron acceptors.
Diamond films have also been doped unintentionally when, for example, the plasma has decomposed a substrate holder fabricated from hexagonal boron nitride.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 6

[0129] A layer was grown by the process described in Example 4. This was then suitably processed and analysed on both front and back surfaces of a layer 538 pm thick. The volume under analysis was 16.1 mm3

[0130] The boron concentration was determined to be 0.52 ppm in the front surface, 0.34 ppm in the back surface, with a average of 0.43 ppm. 70% of the volume of this layer was determined to lie in the range of −23.3 to +23.4 of the mean, a total range of 46.7%.

[0131] SIMS mapping for boron was then repeated on the growth face with a resolution of less than 30 μm, to further demonstrate the local uniformity of boron uptake, with the results shown in Table 5 below. Analysis for elements other than carbon showed no impurities above a detection limit of 0.5 ppm.

[0132] The nitrogen concentration was measured in the layer to be less than 0.03 ppm, this upper limit being set by the sensitivity under the conditions used for the measurements.

[0133] The front and back surfaces of the sa...

example 7

[0136] A layer was grown by the process described in Example 4. This was then processed into a layer 818 pm thick and mapped using IR absorption over an area of 5×5 mm (36 datapoints) on a 1 mm pitch to measure the variation in uncompensated B. 90% of the measurements fell within a full range of 13% about the mean value.

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Abstract

A layer of single crystal boron doped diamond produced by CVD and having a total boron concentration which is uniform. The layer is formed from a single growth sector, or has a thickness exceeding 100 μm, or has a volume exceeding 1 mm3, or a combination of such characteristics.

Description

[0001] This is a divisional application of U.S. application Ser. No. 10 / 653,419, filed Sep. 3, 2003, which is a continuation of U.S. application Ser. No. 10 / 319,573, filed Dec. 16, 2002.BACKGROUND OF THE INVENTION [0002] This invention relates to doped diamond and more particularly to doped diamond produced by chemical vapour deposition (hereinafter referred to as CVD diamond). [0003] There are a range of applications of diamond for which a doped diamond layer of significant dimensions, with a uniform dopant concentration and associated electronic and / or optical properties would be advantageous. Dependent on the detailed application, this material needs to substantially exclude detrimental electronic or optically active traps or defects. To date, material of this type has not been available. [0004] Applications such as high power electronics require bulk free standing diamond with thicknesses ranging from 50 to 1000 μm and lateral sizes varying from 1×1 mm2 to 50×50 mm2. For viable ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C23C16/00C30B29/04C23C16/27C30B25/10
CPCC30B25/105C30B29/04Y10T428/30C30B25/10
Inventor SCARSBROOK, GEOFFREY ALANMARTINEAU, PHILIP MAURICETWITCHEN, DANIEL JAMESWHITEHEAD, ANDREW JOHNCOOPER, MICHAEL ANDREWDORN, BARBEL SUSANNE CHARLOTTE
Owner ELEMENT SIX LTD
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