107 results about "Boron concentration" patented technology

Provided is a GaAs wafer that can suitably be used to produce LiDAR sensors in particular and a method of producing a GaAs ingot that can be used to obtain such a GaAs wafer. The GaAs wafer has a silicon concentration of 5.0×1017 cm−3 or more and less than 3.5×1018 cm−3, an indium concentration of 3.0×1017 cm−3 or more and less than 3.0×1019 cm−3, and a boron concentration of 1.0×1018 cm−3 or more. The average dislocation density of the GaAs wafer is 1500 / cm2 or less.

A method includes forming a first semiconductor fin on a substrate, forming a source / drain region in the first semiconductor fin, depositing a capping layer on the source / drain region, where the capping layer includes a first boron concentration higher than a second boron concentration of the source / drain region, etching an opening through the capping layer, the opening exposing the source / drain region, forming a silicide layer on the exposed source / drain region and forming a source / drain contact on the silicide layer.

The application relates to the technical field of medical data processing, and discloses a macroscopic cross-section database construction method, a dose determination method, a device and equipment, which comprises the following steps: setting multiple boron concentration values for the tissue types corresponding to a human body model; selecting corresponding neutron source parameters for the tissue types and the multiple boron concentration values, wherein the neutron source parameters comprise energy range values; dividing the energy range values into multiple discrete neutron energy groups; performing particle transport simulation based on the selected neutron source parameters, jumping between different neutron energy groups in the simulation process, and obtaining neutron reaction rates and neutron fluxes of the tissue types under the multiple boron concentration values and the multiple neutron energy groups; and obtaining neutron macroscopic cross-section values of the tissue types under the multiple boron concentration values and the multiple neutron energy groups based on the neutron reaction rates and the neutron fluxes, and constructing a multi-group macroscopic cross-section database. The application can improve the calculation efficiency of the radiation dose and improve the adaptability to individual metabolic differences during dose calculation.

A boron (B) layer may be formed as a passivation layer in a recess in which a vertical transfer gate is to be formed. The recess may then be filled with a gate electrode of the vertical transfer gate over the passivation layer (and / or one or more intervening layers) to form the vertical transfer gate. The passivation layer may be formed in the recess by epitaxial growth. The use of epitaxy to grow the passivation layer enables precise control over the profile, uniformity, and boron concentration in the passivation layer. Moreover, the use of epitaxy to grow the passivation layer may reduce the diffusion length of the passivation layer into the substrate of the pixel sensor, which provides increased area in the pixel sensor for the photodiode.

The invention provides a device and a method for on-line measurement of boron concentration in a boron trifluoride complex system, and relates to the technical field of boron-10 acid production. The device comprises a neutron emission part, a fluid circulation part, a neutron detection part and a data processing part. The neutron emission part is used for emitting thermal neutron beams, the fluid circulation part is communicated with a fluid pipeline at the bottom of an exchange rectifying tower of the boron trifluoride-anisole complex production process, and the fluid circulation part is of a neutron penetrable structure; the neutron detection part is arranged on the side, away from the neutron emission part, of the fluid circulation part and used for receiving thermal neutron beams penetrating through the boron trifluoride-anisole complex and converting neutron intensity signals into electric signals, and the data processing part is electrically connected with the neutron detection part and used for receiving the electric signals and sending the electric signals to the fluid circulation part. And inverting the concentration of boron-10 in the boron trifluoride-anisole complex according to the attenuation degree of the thermal neutron beam to obtain the total concentration of boron. The device can output the total boron concentration measurement result in real time, and sampling can be carried out without interrupting the production process.

The substrate (1) for electronic devices has a first diamond single crystal layer (2) and a second diamond single crystal layer (4) on top of it. The first diamond single crystal layer (2) has a nitrogen concentration of less than 20 ppb, a boron concentration of less than 0.01 ppb, a surface orientation of (001) plane orientation of ±3.0° or less on the surface (2A), and a surface roughness Ra of 30 nm or less on the surface (2A). The second diamond single crystal layer (4) has a nitrogen concentration of less than 20 ppb, a boron concentration of 2.0 ppb or more and less than 20 ppb, a surface orientation of (001) plane orientation of ±3.0° or less on the surface (4A), a surface roughness Ra of 30 nm or less on the surface (4A), and a thickness of the second diamond single crystal layer (4) is 50 nm or more and 400 nm or less. The surface (4A) is hydrogen-terminated by being covered with hydrogen, and an NO2 adsorption surface (6) is formed by the adsorption of NO2.

Components and methods for forming the components are provided that promote adherence of environmental barrier coatings to surfaces of the components. The components include a substrate formed of a SiC—SiC composite that includes boron, a surface of the substrate that has a concentration of the boron that is reduced relative to a remainder of the substrate, and an environmental barrier coating disposed on the surface of the substrate. The methods include providing the SiC—SiC composite, performing a pretreatment process on a portion of the surface of the component to reduce the concentration of the boron at the surface, and forming the environmental barrier coating on the surface.

The invention provides a multi-dimensional inhomogeneous void fraction neutronics calculation modeling method for a spiral petal-shaped fuel assembly. The method comprises the following steps: firstly, constructing a geometric model of a fuel rod and a gas-liquid two-phase flow coolant region, then carrying out axial-radial self-adaptive unlimited partitioning on the coolant region, adjusting the scale according to the void fraction distribution characteristics, then setting the axial reference void fraction and the radial correction coefficient of each sub-region, and establishing a unified partition numbering rule; then, combining a gas-liquid two-phase flow theory and a spiral structure secondary flow effect to construct a void fraction exponential attenuation coupling model, coupling the coolant density and the boron concentration to obtain the mixing density, then storing geometric and physical property information in an HDF5 format and completing geometric consistency verification, and finally, through a gas-liquid two-phase flow numerical simulation verification method, obtaining a gas-liquid two-phase flow numerical simulation verification result. And outputting a partition modeling result and a coupling analysis report. According to the method, a scientific, efficient and accurate modeling solution is provided for pressurized water reactor core multi-physics coupling analysis adopting the spiral petal-shaped fuel assembly.

A boron neutron capture therapy system and a treatment planning generation method thereof, the boron neutron capture therapy system comprising a neutron beam irradiation device, a treatment planning module and a control module. The neutron beam irradiation device is used to generate a therapeutic neutron beam and irradiate to a boron-containing drug-incorporated irradiated body to form an irradiated site during irradiation therapy. 10 B). The treatment planning module performs dose simulation calculation according to medical image data of the irradiated site and parameters of the therapeutic neutron beam generated by the neutron beam irradiation device, and generates a treatment plan, wherein the medical image data of the irradiated site comprises tissue-related information and boron 10 B) concentration-related information. The control module calls the treatment plan corresponding to the irradiated body from the treatment planning module, and controls the neutron beam irradiation device to perform irradiation therapy on the irradiated body according to the treatment plan. The boron neutron capture therapy system and the treatment planning generation method thereof can improve the accuracy of model establishment and dose calculation.

The present application relates to a boron neutron capture therapy system (100) and a method of operating the same, the boron neutron capture therapy system (100) including a neutron beam irradiation device (10), a treatment planning module (30), and a control module (40), wherein the neutron beam irradiation device (10) generates a neutron beam and irradiates the neutron beam to an irradiated body, the treatment planning module (30) sets a boron concentration for each voxel unit in a three-dimensional voxel prosthetic tissue model to generate a treatment plan, and the control module (40) controls the neutron beam irradiation device (10) to irradiate based on the treatment plan. The treatment planning module (30) sets corresponding boron concentration data for each voxel unit, and then combines it with medical image data to perform dose simulation to formulate a treatment plan, thereby making the distribution of boron atoms in the region of interest more consistent with the actual situation, improving the accuracy of model establishment and dose calculation, and ensuring the accuracy of the treatment plan, thereby guaranteeing the treatment effect.

A positive electrode active material particle according to one aspect of the present invention comprises sulfur(S) and boron (B), and when a ratio of a sulfur(S) concentration (ppm) to a boron (B) concentration (ppm) is denoted as S / B, it may be that 8≤S / B≤20.

The invention relates to the technical field of nuclear power, in particular to a boron concentration control method of a nuclear power unit cooling loop and a storage medium. The boron concentration control method for the nuclear power unit cooling loop comprises the steps that the total volume of a coolant in the cooling loop at the full power temperature is obtained; the volume difference between the liquid volume and the total volume of the coolant at the preset temperature is obtained, and the shrinkage amount is obtained; according to the abundance and the total volume of the boron 10 in the enriched boron solution, the required material changing boron concentration is calculated; designing the effective volume and the stored boric acid concentration of the boric acid storage tank according to the shrinkage amount, the total volume and the reloading boron concentration; storing a boric acid solution prepared from the enriched boron solution according to the concentration of the stored boric acid in a boric acid storage tank; and the boric acid solution is injected into the cooling loop, so that the coolant reaches the reloading boron concentration before the preset temperature. According to the method, the concentration of boron in the cooling loop is controlled by adopting enriched boron, so that the volume of the required boric acid solution can be reduced while the cooling loop is rapidly boronized.

This invention discloses a front-end interaction and clinical safety control method and system for boron neutron capture therapy, comprising the following steps: constructing a patient-specific treatment model; during treatment, collecting real-time monitoring data streams containing boron concentration data and physiological state signals through biosensors; inputting the monitoring data streams into the patient-specific treatment model to predict future outcomes; based on the prediction results, generating evaluation results in real time through a dynamic optimization algorithm; arbitrating real-time control commands and physiological state signals for safety, and ultimately controlling the treatment execution device; and displaying the real-time monitoring data streams, prediction results, control commands, and safety status through a unified interactive interface. This invention achieves continuous and prospective prediction of boron drug distribution and radiation dose by constructing a treatment model that integrates the patient's unique anatomical and physiological information and dynamically driving the model using real-time collected in vivo data.

The invention discloses a crystal pulling system for pulling a heavily boron-doped silicon single crystal and a control method thereof, and the crystal pulling system for pulling the heavily boron-doped silicon single crystal comprises a quartz crucible, a boron particle feeder, a heating device, a dual laser-induced breakdown spectroscopy measurement device and a model prediction controller, wherein the boron particle feeder is positioned above the liquid level of melt in the quartz crucible and is used for supplementing boron particles to the surface of the melt; the heating device comprises a temperature adjusting part, and the temperature adjusting part is located above the liquid level of the melt and used for adjusting the temperature gradient of the melt located in the quartz crucible near a solid-liquid interface; the dual-laser-induced breakdown spectroscopy measurement device comprises a first detection probe and a second detection probe, the first detection probe is used for detecting the melt boron concentration in a nearby area where a crystal bar is in contact with the melt liquid level, and the second detection probe is used for detecting the carrier concentration of the grown crystal bar.

Provide a semiconductor device in which the amount of harmful defects in the gate insulating layer is reduced. 【Solution means】The semiconductor device of the embodiment includes a silicon carbide layer, a gate electrode, and a silicon oxide layer provided between the silicon carbide layer and the gate electrode, which contains one element selected from the group consisting of hydrogen, deuterium, and fluorine, boron, and carbon, and is provided between the silicon carbide layer and the silicon oxide layer. The concentration of boron is 1×10 20 cm -3 or more, and includes a region where the concentration distribution of boron in the silicon carbide layer, the silicon oxide layer, and the region has a peak in the region. The first concentration of boron at a first position 5 nm away from the peak toward the silicon oxide layer side is 1×10 18 cm -3 or more, the second concentration of carbon at the first position is 1×10 18 cm -3 or more, the third concentration of the element at the first position is 1×10 18 cm -3 or more, the second concentration is 80% or more and 120% or less of the first concentration, and the third concentration is 80% or more and 120% or less of the first concentration.

The present invention relates to the technical field of nuclear auxiliary systems, and discloses a method for restoring the boron-10 abundance of a reactor coolant system boric acid solution, comprising the following steps: judging whether the boric acid solution to be tested reaches a startup recovery condition; if so, obtaining a sample to be tested; analyzing the sample to be tested to obtain sample data; obtaining on-site collection data; calculating based on the sample data and the on-site collection data, obtaining an enriched boric acid mass to be added; making boron according to the enriched boric acid mass to be added, obtaining a boric acid solution to be added; analyzing the boric acid solution to be added, obtaining the boron concentration of the boric acid solution to be added; restoring the boric acid solution of a boric acid solution storage tank according to the boron concentration of the boric acid solution to be added. The present invention gradually increases the boron-10 abundance of the coolant system boric acid solution by re-making boron and adding lithium for water exchange or boronization and power reduction operation in the reactor coolant system during unit operation, reduces the critical boron concentration deviation, and avoids the problem of exceeding the limit value.

The present disclosure provides a process for reducing the boron concentration in a semiconductor layer (12) of a semiconductor-on-insulator substrate (1), comprising: at least one thermal treatment cycle, each cycle including thermally oxidizing the semiconductor layer (12) to form an oxide layer (120) on the semiconductor layer (12), wherein boron atoms from the semiconductor layer (12) diffuse into the oxide layer (120) such that boron segregation causes the semiconductor layer (12) to be boron deficient at its interface with the oxide layer (120); removing the oxide layer (120); Including, thermally oxidizing includes increasing the temperature above a target thermal oxidation temperature in an inert atmosphere and then decreasing the temperature to the target thermal oxidation temperature to create a temperature gradient within the substrate to induce a higher rate of formation of the oxide layer (120) at the center of the semiconductor layer than at the edges; Regarding the process.

There is provided a novel boron-doped single-crystal diamond film that has an increased concentration of boron contained in the boron-doped single-crystal diamond film, and also has a controlled plane orientation and a controlled thickness, has an increased area and a reduced resistivity, and is easy to produce. A boron-doped single-crystal diamond film having a boron concentration of 2×1020 atms / cm3 or more, a metal element concentration of less than 1×1016 atms / cm3, a nitrogen concentration of 0.2 ppm or less, a thickness in a range of 10 to 500 μm, and an off-angle in a {001} plane orientation in a range of 0.1 to 4.0°.

The sintered body has diamond particles and a bonding material. The concentration of boron in the diamond particles is 0.001 mass% or more and 0.9 mass% or less. The concentration of boron in the bonding material is 0.5 mass% or more and 40 mass% or less.

This invention discloses a high-boron-loading manganese-based boron drug for BNCT diagnosis and treatment, its preparation, and its application, belonging to the fields of biomedicine and nuclear medicine. The boron drug structure is shown in general formula 7, with manganese porphyrin as the core skeleton. A benzene ring side chain at the meso position of the porphyrin ring is connected to a boron-10-containing catechol borate ester group via an amide bond. All boron atoms are boron-10 isotopes. The preparation method includes: first constructing the manganese porphyrin skeleton through condensation, cyclization, and metal coordination reactions; then independently preparing boron source units; and finally obtaining the target product through amide bond coupling. This boron drug possesses high boron-10 loading, efficient blood-brain barrier penetration, and excellent MRI imaging performance, enabling real-time and precise monitoring of boron drug distribution in vivo. The quantitative correlation between imaging signals and boron concentration guides the timing of neutron irradiation, integrating MRI tracing and BNCT treatment, effectively solving the problems of low boron loading, inability to penetrate the blood-brain barrier, and difficulty in real-time monitoring of in vivo distribution in existing boron drugs.

The application provides a precise calculation method and an automatic calculation system for the upper limit of a reactor control rod bank of a third-generation pressurized water reactor nuclear power plant. The precise calculation method can obtain the upper limit of the control rod bank under the conditions of any burnup, any power and any boron concentration, considering the actual operation of the reactor, and effectively supports the accurate control of the reactor by the nuclear power plant operators. In order to more conveniently and automatically calculate the upper limit of the control rod bank, the automatic calculation system is developed on the basis of the precise calculation method, thereby overcoming the shortcomings of long time consumption and high error rate of manual calculation, and further ensuring the accurate control of the upper limit of the control rod bank by the nuclear power plant operators. The automatic calculation system is repeatedly debugged and actually verified, proving the practicability of the upper limit of the control rod bank fast calculation system, and having a good industrial application prospect.

The invention relates to the technical field of radiotherapy planning, in particular to a BNCT treatment plan reverse planning method which comprises the steps of calibration condition selection, target region and region-of-interest definition, boron concentration initialization, reference dose calculation and normalization, objective function construction and iteration initialization and boron concentration optimization iteration. Updating and circulating parameters, and judging convergence and stopping circulation; the invention creatively provides a BNCT reverse treatment planning method with uniform biological effective dose as a target, has significant advantages in optimization effect, has clear feasibility in operation process, and shows a huge prospect of remodeling the existing treatment plan normal form and developing into a future BNCT standardized, individualized and precise treatment plan making method.

The invention discloses a two-parameter detector and a two-parameter real-time detection method and system for BNCT, and the detector comprises a sensing element which is made based on a Li2B4O7 crystal; the signal acquisition module is configured to respectively acquire an electric pulse signal and an electric parameter signal for indicating neutron counting from the sensing element; the signal conversion module is used for converting an electric pulse signal for indicating neutron counting into effective pulse counting and converting the electric parameter signal into a resistance parameter; the model calculation module is used for carrying a two-parameter response model and carrying out data processing on the resistance parameters based on the model to obtain corrected neutron flux; the technical problems that in the BNCT treatment process, a gamma-ray energy spectrum analysis method adopted in the prior art is likely to cause interference on the measurement result of the boron concentration, and real-time and rapid monitoring of the boron concentration is difficult to achieve are solved.

A substrate (1) for an electronic device comprises a first diamond single-crystal layer (2), and a second diamond single-crystal layer (4) on the first diamond single-crystal layer (2). In the first diamond single-crystal layer (2), the nitrogen concentration is less than 20 ppb, the boron concentration is less than 0.01 ppb, the plane orientation of a surface (2A) is (001) plane orientation ± 3.0° or less, and the surface roughness Ra of the surface (2A) is 30 nm or less. In the second diamond single-crystal layer (4), the nitrogen concentration is less than 20 ppb, the boron concentration is 2.0 ppb to less than 20 ppb, the plane orientation of a surface (4A) is (001) plane orientation ± 3.0° or less, the surface roughness Ra of the surface (4A) is 30 nm or less, and the thickness of the second diamond single-crystal layer (4) is 50 to 400 nm. The surface (4A) is hydrogen-terminated by being covered with hydrogen, and has an NO2 adsorption surface (6) formed thereon by adsorption of NO2.　

This invention belongs to the technical field of reactor moderator temperature coefficient measurement methods under power conditions, specifically relating to a method for measuring the reactor moderator temperature coefficient under power conditions. It includes the following steps: Step 1: Confirm or create a reactor xenon imbalance state; Step 2: Set the control rods to manual mode, maintaining constant power and boron concentration; Step 3: Collect reactor power and moderator temperature data to measure the moderator temperature coefficient; Step 4: Calculate xenon toxicity based on power; Step 5: Obtain the Doppler temperature coefficient α under this state according to the design. dop Step 6: Calculate the overall temperature coefficient α ttc The overall temperature coefficient α ttc It equals the negative of the reciprocal of the slope of the rate at which the average temperature of the moderator changes with xenon toxicity; Step 7: Based on α mod =α ttc -α dop Calculation of the temperature coefficient of a moderator. This invention provides a method for measuring the temperature coefficient of a moderator using changes in xenon toxicity. The xenon toxicity calculation is reliable, the measurement time is short, and the measurement error of the temperature coefficient of the moderator can be reduced.

The invention discloses a neutron beam dynamic regulation and control method and system in a BNCT process, and the method comprises the following steps: constructing a neutron beam-out regulation and control model, and obtaining a mapping relation between the intensity of a neutron beam and a neutron dose rate; dynamically monitoring the boron concentration of the tumor tissue and the boron concentration of the normal tissue to obtain a real-time T / N value; converting the T / N value into neutron beam intensity in real time, and substituting the neutron beam intensity into the neutron beam output regulation and control model to obtain a real-time neutron dose rate; comparing the obtained real-time neutron dose rate with a preset neutron dose rate, and if there is a difference between the real-time neutron dose rate and the preset neutron dose rate, adjusting neutron source parameters until the real-time neutron dose rate is consistent with the preset neutron dose rate; and the step S2 to the step S4 are repeated, and neutron beam dynamic regulation and control in the BNCT process are achieved. According to the invention, the technical problem that the neutron outgoing beam regulation and control precision and efficiency are low due to the fact that the real-time change of the boron concentration is not considered in the prior art can be solved.

This disclosure relates to a method for determining bioeffective dose, wherein the method includes: detecting the boron concentration C of each voxel in the target at multiple time points. B ; Calculate C B The corresponding biological effect value (RBE) B Determine C B and RBE B The first association relationship, based on the first association relationship, determines the connection through C. B Characterized RBE B ; Calculate C B The corresponding first physical absorbed dose rate D B And other physical absorbed dose rates corresponding to dose components other than boron, and physical dose rate distribution D phy According to RBE B and D B The product of the other dose components and the product of other biological effect values ​​and other physically absorbed dose rates is used to calculate C. B The combined biological effect value (CBE); based on CBE and D phy Calculate the biologically effective dose D bio According to this disclosure, it is beneficial to determine the appropriate irradiation time for different voxels during BNCT in order to obtain better therapeutic effects.

The present invention pertains to a composite semipermeable membrane comprising: a porous support layer; and a separation function layer provided on the porous support layer. The separation function layer contains a polyamide including a halogen. The ratio of the number of carbon atoms to which a halogen is bonded with respect to the number of all carbon atoms on the surface of the separation function layer is 0.002-0.016. The composite semipermeable membrane exhibits a boron removal rate of at least 90% when an aqueous solution at 25°C having a pH of 6.5 and a sodium chloride concentration of 32000 mg / L and a boron concentration of 5 mg / L is caused to pass through the composite semipermeable membrane with an operation pressure of 5.5 MPa.

This invention specifically relates to a method for correcting the critical boron concentration under full power conditions. Based on a three-dimensional reactive equilibrium equation and considering the influence of temperature deviation on the Doppler effect, the critical boron concentration under full power conditions is: where CB ref This represents the critical boron concentration at full power; CB m ρ represents the actual boron concentration under the measured conditions. xem Indicates the equilibrium xenon poisoning under measurement conditions; ρ xeref This represents the balanced xenon poisoning at full power; ρ rccam Indicates the reactivity introduced by the control rod under measurement conditions; pr m Indicates the actual power under the measured conditions; HFP represents full power; α pc α represents the average of the sum of the power coefficients under the measured state and the full-power state; b T represents the average of the sum of the differential boron values ​​under the measured state and the full-power state; avgm T represents the average temperature of the moderator under the measured conditions. ref (pr m ) represents the moderator reference temperature under measurement conditions; α ttcm This represents the total temperature coefficient under the measurement conditions. The invention also relates to computer equipment and a computer-readable storage medium, outlining the steps for implementing the above-described method for correcting the critical boron concentration under full power conditions. Based on a three-dimensional reactive equilibrium equation, and considering the influence of temperature deviation on the Doppler effect, this invention achieves accurate correction of the critical boron concentration under full power conditions when nuclear power units increasingly participate in peak shaving.

The invention discloses a method for determining the boron concentration in a silicon-germanium-boron film, which comprises the following steps of: establishing a silicon-germanium film database which comprises the corresponding relationship between the spectrum diffraction peak position of the silicon-germanium film and the germanium concentration; sequentially dividing the boron concentration of the silicon-germanium-boron thin film into a low-concentration interval, a medium-concentration interval and a high-concentration interval, and forming a silicon-germanium-boron three-section type peak position-boron concentration fitting model according to a spectral diffraction peak position and boron concentration fitting formula in each concentration interval; acquiring a spectral diffraction peak position of a to-be-detected film sample, taking a boron-free silicon-germanium film as a reference film sample under the same process condition, acquiring the spectral diffraction peak position of the silicon-germanium film database through the silicon-germanium film database for peak position comparison, and determining a concentration interval corresponding to the to-be-detected film sample based on a comparison result; selecting a corresponding fitting formula in the silicon-germanium-boron three-section peak position-boron concentration fitting model for calculation so as to obtain an accurate boron concentration value of the to-be-detected film sample; and substituting the accurate value of the boron concentration into the electrical transport model for verification.