151 results about "Boron concentration" patented technology

The invention discloses a pressurized water reactor primary loop boron concentration prediction and control method and system, and the method comprises the steps: obtaining an original helium flow sequence of a pressurized water reactor primary loop, and obtaining M boron concentration IMF components IMF1,..., IMFM; the M boron concentration IMF components IMF1,..., IMFM are put into a trained LSTM model for prediction, predicted values Y1, Y2,..., YM of the IMF components are obtained, and error coefficients delta Y1, delta Y2,..., delta YM corresponding to the boron concentration IMF components are calculated according to the predicted values Y1, Y2,..., YM of the IMF components; and inputting error coefficients delta Y1, delta Y2,..., delta YM corresponding to each boron concentration IMF component into the trained DenseNet prediction model to obtain an optimal IMF component predicted value # imgabs0 # of the boron concentration signal sequence, based on a DEM-DAC algorithm, controlling the boron concentration of the pressurized water reactor primary loop according to the optimal IMF component predicted value # imgabs1 # of the boron concentration signal sequence, and calculating the boron concentration of the pressurized water reactor primary loop according to the optimal IMF component predicted value # imgabs0 # of the boron concentration signal sequence. The method and the system can solve the technical problems that the boron concentration fluctuation of the primary loop is large and the unit load regulation performance is poor during the reactor variable load operation period.

Provided is a GaAs wafer that can suitably be used to produce LiDAR sensors in particular and a method of producing a GaAs ingot that can be used to obtain such a GaAs wafer. The GaAs wafer has a silicon concentration of 5.0×1017 cm−3 or more and less than 3.5×1018 cm−3, an indium concentration of 3.0×1017 cm−3 or more and less than 3.0×1019 cm−3, and a boron concentration of 1.0×1018 cm−3 or more. The average dislocation density of the GaAs wafer is 1500 / cm2 or less.

The present invention provides a multi-layer doping source structure, and a high-quality emitter and a controllable preparation method therefor. The multi-layer doping source structure comprises a dielectric layer, a nitrogen silicide layer and a doping source layer, which are stacked on the front surface of a crystalline silicon substrate, wherein the dielectric layer is a silicon oxide film or a silicon oxynitride film, the doping source layer is boron-doped amorphous silicon doped with functional elements or phosphorus-doped amorphous silicon doped with functional elements, and the functional elements doped in the doping source layer are carbon and / or nitrogen. In the present invention, the doping source structure is composed of the dielectric layer, a nitrogen silicide and boron- / phosphorus-doped amorphous silicon doped with functional elements; the multi-layer doping source structure has both a strong laser absorption capability and a high boron or phosphorus doping concentration, thereby facilitating a reduction in the laser power and the illumination time required by a laser selective emitter technique; moreover, such a multi-layer doping source structure is favorable for reducing the surface boron concentration, decreasing defects and improving the passivation effect of an emitter, and therefore an improvement in battery efficiency can be promoted.

The invention discloses a method and device for reusing boric acid in waste liquid of a nuclear power plant, and the method comprises the following steps: carrying out the pretreatment of radionuclides in the waste liquid of the nuclear power plant, and obtaining first radioactive waste liquid; carrying out nanofiltration on the first radioactive waste liquid to respectively obtain separated first produced water and first concentrated water; the first produced water is subjected to first boron concentration through reverse osmosis, separated second produced water and second concentrated water are obtained, the second concentrated water is a boric acid concentrated solution, and the second concentrated water is reused in the nuclear power plant; the second produced water is subjected to second-stage boron concentration through second-stage reverse osmosis, third produced water and third concentrated water which are separated are obtained, and the third produced water is produced water meeting the preset discharge condition. According to the method, deep purification treatment is conducted on the waste liquid of the nuclear power plant, resource recycling and reuse of boric acid are achieved while the emission requirement is met, and the reuse concentration of boric acid of different reactor types can be met by adjusting technological parameters.

The invention relates to the technical field of boron neutron capture therapy, in particular to a dose verification device for boron neutron capture therapy. The objective of the invention is to solve the technical problem that dose distribution of tumor tissues and surrounding thereof cannot be accurately measured. To this end, the dose verification device of the present application comprises: a box; the die body assemblies move in the incident direction of the neutron beam and are arranged in a stacked mode; the die body insertion plate comprises a tumor tissue simulation positioning area containing boron-10 with a first concentration and / or a normal tissue simulation positioning area containing boron-10 with a second concentration, and the first concentration is greater than the second concentration; the dose detection module is used for detecting distribution data of secondary particles generated after the boron-10 and neutrons are subjected to nuclear reaction; and the data processing module is used for acquiring the distribution data and determining the dose distribution in the die body assembly according to the distribution data. According to the application, the difference of the boron-10 concentration of the tumor tissue and the normal tissue can be better simulated, and the dose distribution of the tumor tissue and the surrounding thereof can be more accurately measured.

The invention relates to the technical field of radiotherapy, and discloses a method for generating a boron neutron capture therapy plan, computer equipment and a storage medium. Comprising the following steps: based on current state data of neutrons, determining first section data, second section data and a current transport distance of the neutrons at a current position, and judging whether the neutrons collide or not; wherein the first cross section data is used for describing the macroscopic cross section of nuclides except boron, and the second cross section data is used for describing macroscopic cross section neutrons obtained through calculation according to the boron concentration of the current grid and the microcosmic cross section of the nuclide boron; and under the condition that neutrons do not collide and the neutrons are transmitted from the current grid to the next grid through the surface, if the two grids are made of the same material, updating the second cross section data based on the boron concentration of the next grid to calculate the dose, and finally generating a boron neutron capture therapy plan by using a dose distribution calculation result. Therefore, only the cross section data related to the boron concentration is updated in the penetrating surface, and the calculation efficiency is optimized.

A method includes forming a first semiconductor fin on a substrate, forming a source / drain region in the first semiconductor fin, depositing a capping layer on the source / drain region, where the capping layer includes a first boron concentration higher than a second boron concentration of the source / drain region, etching an opening through the capping layer, the opening exposing the source / drain region, forming a silicide layer on the exposed source / drain region and forming a source / drain contact on the silicide layer.

The application relates to the technical field of medical data processing, and discloses a macroscopic cross-section database construction method, a dose determination method, a device and equipment, which comprises the following steps: setting multiple boron concentration values for the tissue types corresponding to a human body model; selecting corresponding neutron source parameters for the tissue types and the multiple boron concentration values, wherein the neutron source parameters comprise energy range values; dividing the energy range values into multiple discrete neutron energy groups; performing particle transport simulation based on the selected neutron source parameters, jumping between different neutron energy groups in the simulation process, and obtaining neutron reaction rates and neutron fluxes of the tissue types under the multiple boron concentration values and the multiple neutron energy groups; and obtaining neutron macroscopic cross-section values of the tissue types under the multiple boron concentration values and the multiple neutron energy groups based on the neutron reaction rates and the neutron fluxes, and constructing a multi-group macroscopic cross-section database. The application can improve the calculation efficiency of the radiation dose and improve the adaptability to individual metabolic differences during dose calculation.

A boron (B) layer may be formed as a passivation layer in a recess in which a vertical transfer gate is to be formed. The recess may then be filled with a gate electrode of the vertical transfer gate over the passivation layer (and / or one or more intervening layers) to form the vertical transfer gate. The passivation layer may be formed in the recess by epitaxial growth. The use of epitaxy to grow the passivation layer enables precise control over the profile, uniformity, and boron concentration in the passivation layer. Moreover, the use of epitaxy to grow the passivation layer may reduce the diffusion length of the passivation layer into the substrate of the pixel sensor, which provides increased area in the pixel sensor for the photodiode.

The invention provides a device and a method for on-line measurement of boron concentration in a boron trifluoride complex system, and relates to the technical field of boron-10 acid production. The device comprises a neutron emission part, a fluid circulation part, a neutron detection part and a data processing part. The neutron emission part is used for emitting thermal neutron beams, the fluid circulation part is communicated with a fluid pipeline at the bottom of an exchange rectifying tower of the boron trifluoride-anisole complex production process, and the fluid circulation part is of a neutron penetrable structure; the neutron detection part is arranged on the side, away from the neutron emission part, of the fluid circulation part and used for receiving thermal neutron beams penetrating through the boron trifluoride-anisole complex and converting neutron intensity signals into electric signals, and the data processing part is electrically connected with the neutron detection part and used for receiving the electric signals and sending the electric signals to the fluid circulation part. And inverting the concentration of boron-10 in the boron trifluoride-anisole complex according to the attenuation degree of the thermal neutron beam to obtain the total concentration of boron. The device can output the total boron concentration measurement result in real time, and sampling can be carried out without interrupting the production process.

The substrate (1) for electronic devices has a first diamond single crystal layer (2) and a second diamond single crystal layer (4) on top of it. The first diamond single crystal layer (2) has a nitrogen concentration of less than 20 ppb, a boron concentration of less than 0.01 ppb, a surface orientation of (001) plane orientation of ±3.0° or less on the surface (2A), and a surface roughness Ra of 30 nm or less on the surface (2A). The second diamond single crystal layer (4) has a nitrogen concentration of less than 20 ppb, a boron concentration of 2.0 ppb or more and less than 20 ppb, a surface orientation of (001) plane orientation of ±3.0° or less on the surface (4A), a surface roughness Ra of 30 nm or less on the surface (4A), and a thickness of the second diamond single crystal layer (4) is 50 nm or more and 400 nm or less. The surface (4A) is hydrogen-terminated by being covered with hydrogen, and an NO2 adsorption surface (6) is formed by the adsorption of NO2.

The invention belongs to the technical field of confluence type three-way valves, and discloses a three-way valve structure for nuclear power. The three-way valve structure for nuclear power comprises a valve body, a first sleeve, a second sleeve and a valve element, the valve body comprises a first valve cavity, a second valve cavity, a first port, a second port and a third port, and the first valve cavity and the second valve cavity are arranged in the first direction and are both in a flat ball shape; the first sleeve is arranged in the first valve cavity in the first direction, one end of the first sleeve communicates with the first port, a first throttling window is formed in the side wall of the first sleeve, the second sleeve is arranged in the second valve cavity in the first direction and communicates with the other end of the first sleeve, and a second throttling window is formed in the side wall of the second sleeve. The valve element is located in the first sleeve and can slide in the first direction, and the first throttling window is divided into a first branch opening and a second branch opening. The three-way valve structure for nuclear power is high in flow capacity, good in flow adjustability and suitable for adjusting the boron concentration of large-flow water replenishing.

Components and methods for forming the components are provided that promote adherence of environmental barrier coatings to surfaces of the components. The components include a substrate formed of a SiC—SiC composite that includes boron, a surface of the substrate that has a concentration of the boron that is reduced relative to a remainder of the substrate, and an environmental barrier coating disposed on the surface of the substrate. The methods include providing the SiC—SiC composite, performing a pretreatment process on a portion of the surface of the component to reduce the concentration of the boron at the surface, and forming the environmental barrier coating on the surface.

The invention provides a multi-dimensional inhomogeneous void fraction neutronics calculation modeling method for a spiral petal-shaped fuel assembly. The method comprises the following steps: firstly, constructing a geometric model of a fuel rod and a gas-liquid two-phase flow coolant region, then carrying out axial-radial self-adaptive unlimited partitioning on the coolant region, adjusting the scale according to the void fraction distribution characteristics, then setting the axial reference void fraction and the radial correction coefficient of each sub-region, and establishing a unified partition numbering rule; then, combining a gas-liquid two-phase flow theory and a spiral structure secondary flow effect to construct a void fraction exponential attenuation coupling model, coupling the coolant density and the boron concentration to obtain the mixing density, then storing geometric and physical property information in an HDF5 format and completing geometric consistency verification, and finally, through a gas-liquid two-phase flow numerical simulation verification method, obtaining a gas-liquid two-phase flow numerical simulation verification result. And outputting a partition modeling result and a coupling analysis report. According to the method, a scientific, efficient and accurate modeling solution is provided for pressurized water reactor core multi-physics coupling analysis adopting the spiral petal-shaped fuel assembly.

A boron neutron capture therapy system and a treatment planning generation method thereof, the boron neutron capture therapy system comprising a neutron beam irradiation device, a treatment planning module and a control module. The neutron beam irradiation device is used to generate a therapeutic neutron beam and irradiate to a boron-containing drug-incorporated irradiated body to form an irradiated site during irradiation therapy. 10 B). The treatment planning module performs dose simulation calculation according to medical image data of the irradiated site and parameters of the therapeutic neutron beam generated by the neutron beam irradiation device, and generates a treatment plan, wherein the medical image data of the irradiated site comprises tissue-related information and boron 10 B) concentration-related information. The control module calls the treatment plan corresponding to the irradiated body from the treatment planning module, and controls the neutron beam irradiation device to perform irradiation therapy on the irradiated body according to the treatment plan. The boron neutron capture therapy system and the treatment planning generation method thereof can improve the accuracy of model establishment and dose calculation.

The present application relates to a boron neutron capture therapy system (100) and a method of operating the same, the boron neutron capture therapy system (100) including a neutron beam irradiation device (10), a treatment planning module (30), and a control module (40), wherein the neutron beam irradiation device (10) generates a neutron beam and irradiates the neutron beam to an irradiated body, the treatment planning module (30) sets a boron concentration for each voxel unit in a three-dimensional voxel prosthetic tissue model to generate a treatment plan, and the control module (40) controls the neutron beam irradiation device (10) to irradiate based on the treatment plan. The treatment planning module (30) sets corresponding boron concentration data for each voxel unit, and then combines it with medical image data to perform dose simulation to formulate a treatment plan, thereby making the distribution of boron atoms in the region of interest more consistent with the actual situation, improving the accuracy of model establishment and dose calculation, and ensuring the accuracy of the treatment plan, thereby guaranteeing the treatment effect.

A positive electrode active material particle according to one aspect of the present invention comprises sulfur(S) and boron (B), and when a ratio of a sulfur(S) concentration (ppm) to a boron (B) concentration (ppm) is denoted as S / B, it may be that 8≤S / B≤20.

The present invention discloses a method for automatically suppressing xenon oscillations and providing auxiliary warning prompts based on the 3AO method, belonging to the technical field of nuclear reactor core monitoring. First, a variety of high-precision sensors are arranged at key positions of the nuclear reactor to timely capture signs of xenon oscillations. By analyzing sensor data, the system can accurately identify early signals of xenon oscillations, providing a basis for formulating subsequent control strategies. The core of the control strategy is the integration of the 3AO method and the deep Q-network algorithm. This algorithm not only comprehensively considers the immediate state of the core but also optimizes control decisions by learning historical data, thereby calculating the optimal control rod position and boron concentration adjustment plan. Subsequently, according to the control instructions generated by the intelligent algorithm, the system automatically prompts the operator to adjust the control rods and boron concentration to respond in real time to the changing requirements of the nuclear reactor. By providing real-time feedback on the adjustment effects, an efficient closed-loop control system is formed, which can continuously improve the accuracy and response speed of the control strategy.

The invention relates to the technical field of nuclear power, in particular to a boron concentration control method of a nuclear power unit cooling loop and a storage medium. The boron concentration control method for the nuclear power unit cooling loop comprises the steps that the total volume of a coolant in the cooling loop at the full power temperature is obtained; the volume difference between the liquid volume and the total volume of the coolant at the preset temperature is obtained, and the shrinkage amount is obtained; according to the abundance and the total volume of the boron 10 in the enriched boron solution, the required material changing boron concentration is calculated; designing the effective volume and the stored boric acid concentration of the boric acid storage tank according to the shrinkage amount, the total volume and the reloading boron concentration; storing a boric acid solution prepared from the enriched boron solution according to the concentration of the stored boric acid in a boric acid storage tank; and the boric acid solution is injected into the cooling loop, so that the coolant reaches the reloading boron concentration before the preset temperature. According to the method, the concentration of boron in the cooling loop is controlled by adopting enriched boron, so that the volume of the required boric acid solution can be reduced while the cooling loop is rapidly boronized.

This invention discloses a front-end interaction and clinical safety control method and system for boron neutron capture therapy, comprising the following steps: constructing a patient-specific treatment model; during treatment, collecting real-time monitoring data streams containing boron concentration data and physiological state signals through biosensors; inputting the monitoring data streams into the patient-specific treatment model to predict future outcomes; based on the prediction results, generating evaluation results in real time through a dynamic optimization algorithm; arbitrating real-time control commands and physiological state signals for safety, and ultimately controlling the treatment execution device; and displaying the real-time monitoring data streams, prediction results, control commands, and safety status through a unified interactive interface. This invention achieves continuous and prospective prediction of boron drug distribution and radiation dose by constructing a treatment model that integrates the patient's unique anatomical and physiological information and dynamically driving the model using real-time collected in vivo data.

A method for the treatment of wastewater from the boron industry with high boron concentrations, using an aluminum hydroxide adsorbent that enables sustainable, economical, recovery, is provided. The facilities used in the method include neutralization pond, 1st decanter, Ca(OH)2 treatment fast stirring reactor, Ca(OH)2 tank, Ca(OH)2 treatment slow stirring reactor, 2nd decanter, Al(OH)3 treatment fast stirring reactor, Al(OH)3 tank, Al(OH)3 treatment slow stirring reactor, 3rd decanter, H2SO4 tank, desorption tank, and 2nd H2SO4 tank.

The present invention provides an analytical method for introducing the boron content in a positive electrode active material. The method includes the following steps: (S1) preparing a positive electrode active material sample in which boron is introduced; (S2) separating a first liquid layer and a first precipitate by dissolving the positive electrode active material sample in water, and then analyzing the solution obtained by acid-treating the first liquid layer using inductively coupled plasma optical emission spectrometry (ICP-OES) to measure the boron concentration; (S3) separating a second liquid layer and a second precipitate by dissolving the first precipitate in water, and then analyzing the solution obtained by acid-treating the second liquid layer using ICP-OES to measure the boron concentration; and (S4) analyzing the solution obtained by adding acid and hydrogen peroxide to the second precipitate using ICP-OES to measure the boron concentration. According to the present invention, by sequentially extracting and analyzing boron introduced to improve the performance of the positive electrode active material for a lithium secondary battery using the solubility differences in water and acid according to the distribution position, the optimal boron content for improving the performance of the positive electrode active material can be obtained based on the distribution of boron in the positive electrode active material.

The present invention provides an intelligent calibration device applied to the boron concentration monitoring channel of a nuclear power plant, which comprises a housing. A display screen control module is arranged on the outer side surface of the housing. A boron solution water tank is arranged inside the housing. A liquid adding opening, a stirring device and a temperature detection device are arranged at the top of the boron solution water tank. An electric heating wire is arranged inside the boron solution water tank. A boron solution inlet connecting pipe, a diluent bottle, a sampling pipe and a boron solution outlet connecting pipe are arranged outside the boron solution water tank. The diluent bottle and the boron solution water tank are connected together through a diluent pipe. A diluent metering pump is arranged on the diluent pipe. A boron solution metering pump and an electric three-way ball valve are arranged on the boron solution outlet connecting pipe. A waste liquid discharge connecting pipe is arranged on the electric three-way ball valve. The present invention can realize the rapid and continuous calibration of the boron concentration monitoring channel, can adjust the temperature of the boron solution according to the working conditions and ensure the uniformity of the solution, and effectively solves the deficiencies of manual calibration and manual sampling and analysis.

The invention discloses a crystal pulling system for pulling a heavily boron-doped silicon single crystal and a control method thereof, and the crystal pulling system for pulling the heavily boron-doped silicon single crystal comprises a quartz crucible, a boron particle feeder, a heating device, a dual laser-induced breakdown spectroscopy measurement device and a model prediction controller, wherein the boron particle feeder is positioned above the liquid level of melt in the quartz crucible and is used for supplementing boron particles to the surface of the melt; the heating device comprises a temperature adjusting part, and the temperature adjusting part is located above the liquid level of the melt and used for adjusting the temperature gradient of the melt located in the quartz crucible near a solid-liquid interface; the dual-laser-induced breakdown spectroscopy measurement device comprises a first detection probe and a second detection probe, the first detection probe is used for detecting the melt boron concentration in a nearby area where a crystal bar is in contact with the melt liquid level, and the second detection probe is used for detecting the carrier concentration of the grown crystal bar.

Provide a semiconductor device in which the amount of harmful defects in the gate insulating layer is reduced. 【Solution means】The semiconductor device of the embodiment includes a silicon carbide layer, a gate electrode, and a silicon oxide layer provided between the silicon carbide layer and the gate electrode, which contains one element selected from the group consisting of hydrogen, deuterium, and fluorine, boron, and carbon, and is provided between the silicon carbide layer and the silicon oxide layer. The concentration of boron is 1×10 20 cm -3 or more, and includes a region where the concentration distribution of boron in the silicon carbide layer, the silicon oxide layer, and the region has a peak in the region. The first concentration of boron at a first position 5 nm away from the peak toward the silicon oxide layer side is 1×10 18 cm -3 or more, the second concentration of carbon at the first position is 1×10 18 cm -3 or more, the third concentration of the element at the first position is 1×10 18 cm -3 or more, the second concentration is 80% or more and 120% or less of the first concentration, and the third concentration is 80% or more and 120% or less of the first concentration.

The present invention relates to the technical field of nuclear auxiliary systems, and discloses a method for restoring the boron-10 abundance of a reactor coolant system boric acid solution, comprising the following steps: judging whether the boric acid solution to be tested reaches a startup recovery condition; if so, obtaining a sample to be tested; analyzing the sample to be tested to obtain sample data; obtaining on-site collection data; calculating based on the sample data and the on-site collection data, obtaining an enriched boric acid mass to be added; making boron according to the enriched boric acid mass to be added, obtaining a boric acid solution to be added; analyzing the boric acid solution to be added, obtaining the boron concentration of the boric acid solution to be added; restoring the boric acid solution of a boric acid solution storage tank according to the boron concentration of the boric acid solution to be added. The present invention gradually increases the boron-10 abundance of the coolant system boric acid solution by re-making boron and adding lithium for water exchange or boronization and power reduction operation in the reactor coolant system during unit operation, reduces the critical boron concentration deviation, and avoids the problem of exceeding the limit value.

The present disclosure provides a process for reducing the boron concentration in a semiconductor layer (12) of a semiconductor-on-insulator substrate (1), comprising: at least one thermal treatment cycle, each cycle including thermally oxidizing the semiconductor layer (12) to form an oxide layer (120) on the semiconductor layer (12), wherein boron atoms from the semiconductor layer (12) diffuse into the oxide layer (120) such that boron segregation causes the semiconductor layer (12) to be boron deficient at its interface with the oxide layer (120); removing the oxide layer (120); Including, thermally oxidizing includes increasing the temperature above a target thermal oxidation temperature in an inert atmosphere and then decreasing the temperature to the target thermal oxidation temperature to create a temperature gradient within the substrate to induce a higher rate of formation of the oxide layer (120) at the center of the semiconductor layer than at the edges; Regarding the process.

There is provided a novel boron-doped single-crystal diamond film that has an increased concentration of boron contained in the boron-doped single-crystal diamond film, and also has a controlled plane orientation and a controlled thickness, has an increased area and a reduced resistivity, and is easy to produce. A boron-doped single-crystal diamond film having a boron concentration of 2×1020 atms / cm3 or more, a metal element concentration of less than 1×1016 atms / cm3, a nitrogen concentration of 0.2 ppm or less, a thickness in a range of 10 to 500 μm, and an off-angle in a {001} plane orientation in a range of 0.1 to 4.0°.

The present invention relates to the field of nuclear power, and in particular to a boron concentration monitoring system and method for a nuclear power plant under multiple pressure platforms in a primary circuit. The method comprises the following steps: determining the primary circuit pressure platform; switching the boron concentration monitoring system to an online mode according to changes in the primary circuit pressure platform; when the primary circuit is at a high pressure platform P1, the boron concentration monitoring system switches to online mode one; when the primary circuit is at a medium pressure platform P2, the boron concentration monitoring system switches to online mode two; and when the primary circuit is at a low pressure platform P3, the boron concentration monitoring system switches to online mode three. The present invention realizes automatic adjustment of the boron meter sampling flow rate under multiple pressure platforms in a primary circuit, thereby achieving the purpose of real-time monitoring of the boron concentration in the primary circuit.

The sintered body has diamond particles and a bonding material. The concentration of boron in the diamond particles is 0.001 mass% or more and 0.9 mass% or less. The concentration of boron in the bonding material is 0.5 mass% or more and 40 mass% or less.