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63 results about "Boron concentration" patented technology

Concentrations of boron in surface water range widely, from 0.001 mg/litre to as much as 360 mg/litre. However, average boron concentrations are typically well below 0.6 mg/litre (see table below).

Macroscopic cross-section database construction method, dose determination method, apparatus and device

The application relates to the technical field of medical data processing, and discloses a macroscopic cross-section database construction method, a dose determination method, a device and equipment, which comprises the following steps: setting multiple boron concentration values for the tissue types corresponding to a human body model; selecting corresponding neutron source parameters for the tissue types and the multiple boron concentration values, wherein the neutron source parameters comprise energy range values; dividing the energy range values into multiple discrete neutron energy groups; performing particle transport simulation based on the selected neutron source parameters, jumping between different neutron energy groups in the simulation process, and obtaining neutron reaction rates and neutron fluxes of the tissue types under the multiple boron concentration values and the multiple neutron energy groups; and obtaining neutron macroscopic cross-section values of the tissue types under the multiple boron concentration values and the multiple neutron energy groups based on the neutron reaction rates and the neutron fluxes, and constructing a multi-group macroscopic cross-section database. The application can improve the calculation efficiency of the radiation dose and improve the adaptability to individual metabolic differences during dose calculation.
Owner:HUABORON NEUTRON TECH (HANGZHOU) CO LTD

Device and method for on-line measurement of boron concentration in boron trifluoride complex system

PendingCN121877928Aaccurate data supportTimely data supportMaterial analysis by transmitting radiationNeutron emissionBoron trifluoride
The invention provides a device and a method for on-line measurement of boron concentration in a boron trifluoride complex system, and relates to the technical field of boron-10 acid production. The device comprises a neutron emission part, a fluid circulation part, a neutron detection part and a data processing part. The neutron emission part is used for emitting thermal neutron beams, the fluid circulation part is communicated with a fluid pipeline at the bottom of an exchange rectifying tower of the boron trifluoride-anisole complex production process, and the fluid circulation part is of a neutron penetrable structure; the neutron detection part is arranged on the side, away from the neutron emission part, of the fluid circulation part and used for receiving thermal neutron beams penetrating through the boron trifluoride-anisole complex and converting neutron intensity signals into electric signals, and the data processing part is electrically connected with the neutron detection part and used for receiving the electric signals and sending the electric signals to the fluid circulation part. And inverting the concentration of boron-10 in the boron trifluoride-anisole complex according to the attenuation degree of the thermal neutron beam to obtain the total concentration of boron. The device can output the total boron concentration measurement result in real time, and sampling can be carried out without interrupting the production process.
Owner:SUZHOU NUCLEAR POWER RES INST CO LTD

Substrate for electronic devices, field-effect transistor, and method for manufacturing a substrate for electronic devices

The substrate (1) for electronic devices has a first diamond single crystal layer (2) and a second diamond single crystal layer (4) on top of it. The first diamond single crystal layer (2) has a nitrogen concentration of less than 20 ppb, a boron concentration of less than 0.01 ppb, a surface orientation of (001) plane orientation of ±3.0° or less on the surface (2A), and a surface roughness Ra of 30 nm or less on the surface (2A). The second diamond single crystal layer (4) has a nitrogen concentration of less than 20 ppb, a boron concentration of 2.0 ppb or more and less than 20 ppb, a surface orientation of (001) plane orientation of ±3.0° or less on the surface (4A), a surface roughness Ra of 30 nm or less on the surface (4A), and a thickness of the second diamond single crystal layer (4) is 50 nm or more and 400 nm or less. The surface (4A) is hydrogen-terminated by being covered with hydrogen, and an NO2 adsorption surface (6) is formed by the adsorption of NO2.
Owner:SAGA UNIVERSITY

Neutronics calculation modeling method for multi-dimensional inhomogeneous void fraction of spiral petal-shaped fuel assembly

The invention provides a multi-dimensional inhomogeneous void fraction neutronics calculation modeling method for a spiral petal-shaped fuel assembly. The method comprises the following steps: firstly, constructing a geometric model of a fuel rod and a gas-liquid two-phase flow coolant region, then carrying out axial-radial self-adaptive unlimited partitioning on the coolant region, adjusting the scale according to the void fraction distribution characteristics, then setting the axial reference void fraction and the radial correction coefficient of each sub-region, and establishing a unified partition numbering rule; then, combining a gas-liquid two-phase flow theory and a spiral structure secondary flow effect to construct a void fraction exponential attenuation coupling model, coupling the coolant density and the boron concentration to obtain the mixing density, then storing geometric and physical property information in an HDF5 format and completing geometric consistency verification, and finally, through a gas-liquid two-phase flow numerical simulation verification method, obtaining a gas-liquid two-phase flow numerical simulation verification result. And outputting a partition modeling result and a coupling analysis report. According to the method, a scientific, efficient and accurate modeling solution is provided for pressurized water reactor core multi-physics coupling analysis adopting the spiral petal-shaped fuel assembly.
Owner:NORTHEAST DIANLI UNIVERSITY

Boron neutron capture therapy system and method for selecting irradiation parameters thereof

A boron neutron capture therapy system and a treatment planning generation method thereof, the boron neutron capture therapy system comprising a neutron beam irradiation device, a treatment planning module and a control module. The neutron beam irradiation device is used to generate a therapeutic neutron beam and irradiate to a boron-containing drug-incorporated irradiated body to form an irradiated site during irradiation therapy. 10 B). The treatment planning module performs dose simulation calculation according to medical image data of the irradiated site and parameters of the therapeutic neutron beam generated by the neutron beam irradiation device, and generates a treatment plan, wherein the medical image data of the irradiated site comprises tissue-related information and boron 10 B) concentration-related information. The control module calls the treatment plan corresponding to the irradiated body from the treatment planning module, and controls the neutron beam irradiation device to perform irradiation therapy on the irradiated body according to the treatment plan. The boron neutron capture therapy system and the treatment planning generation method thereof can improve the accuracy of model establishment and dose calculation.
Owner:NEUBORON THERAPY SYST LTD

Boron neutron capture therapy system and treatment plan generation method

The present application relates to a boron neutron capture therapy system (100) and a method of operating the same, the boron neutron capture therapy system (100) including a neutron beam irradiation device (10), a treatment planning module (30), and a control module (40), wherein the neutron beam irradiation device (10) generates a neutron beam and irradiates the neutron beam to an irradiated body, the treatment planning module (30) sets a boron concentration for each voxel unit in a three-dimensional voxel prosthetic tissue model to generate a treatment plan, and the control module (40) controls the neutron beam irradiation device (10) to irradiate based on the treatment plan. The treatment planning module (30) sets corresponding boron concentration data for each voxel unit, and then combines it with medical image data to perform dose simulation to formulate a treatment plan, thereby making the distribution of boron atoms in the region of interest more consistent with the actual situation, improving the accuracy of model establishment and dose calculation, and ensuring the accuracy of the treatment plan, thereby guaranteeing the treatment effect.
Owner:NEUBORON THERAPY SYST LTD

Positive electrode active material for secondary battery

A positive electrode active material particle according to one aspect of the present invention comprises sulfur(S) and boron (B), and when a ratio of a sulfur(S) concentration (ppm) to a boron (B) concentration (ppm) is denoted as S / B, it may be that 8≤S / B≤20.
Owner:ECOPRO BM CO LTD

A front-end interaction and clinical safety control method and system for boron neutron capture therapy

This invention discloses a front-end interaction and clinical safety control method and system for boron neutron capture therapy, comprising the following steps: constructing a patient-specific treatment model; during treatment, collecting real-time monitoring data streams containing boron concentration data and physiological state signals through biosensors; inputting the monitoring data streams into the patient-specific treatment model to predict future outcomes; based on the prediction results, generating evaluation results in real time through a dynamic optimization algorithm; arbitrating real-time control commands and physiological state signals for safety, and ultimately controlling the treatment execution device; and displaying the real-time monitoring data streams, prediction results, control commands, and safety status through a unified interactive interface. This invention achieves continuous and prospective prediction of boron drug distribution and radiation dose by constructing a treatment model that integrates the patient's unique anatomical and physiological information and dynamically driving the model using real-time collected in vivo data.
Owner:THE FIRST HOSPITAL OF LANZHOU UNIV +2

Crystal pulling system for pulling heavily boron-doped silicon single crystal and control method of crystal pulling system

The invention discloses a crystal pulling system for pulling a heavily boron-doped silicon single crystal and a control method thereof, and the crystal pulling system for pulling the heavily boron-doped silicon single crystal comprises a quartz crucible, a boron particle feeder, a heating device, a dual laser-induced breakdown spectroscopy measurement device and a model prediction controller, wherein the boron particle feeder is positioned above the liquid level of melt in the quartz crucible and is used for supplementing boron particles to the surface of the melt; the heating device comprises a temperature adjusting part, and the temperature adjusting part is located above the liquid level of the melt and used for adjusting the temperature gradient of the melt located in the quartz crucible near a solid-liquid interface; the dual-laser-induced breakdown spectroscopy measurement device comprises a first detection probe and a second detection probe, the first detection probe is used for detecting the melt boron concentration in a nearby area where a crystal bar is in contact with the melt liquid level, and the second detection probe is used for detecting the carrier concentration of the grown crystal bar.
Owner:FERROTEC (NINGXIA) SEMICON TECH CO LTD

Semiconductor devices, inverter circuits, drive systems, vehicles, and elevators.

Provide a semiconductor device in which the amount of harmful defects in the gate insulating layer is reduced. 【Solution means】The semiconductor device of the embodiment includes a silicon carbide layer, a gate electrode, and a silicon oxide layer provided between the silicon carbide layer and the gate electrode, which contains one element selected from the group consisting of hydrogen, deuterium, and fluorine, boron, and carbon, and is provided between the silicon carbide layer and the silicon oxide layer. The concentration of boron is 1×10 20 cm -3 or more, and includes a region where the concentration distribution of boron in the silicon carbide layer, the silicon oxide layer, and the region has a peak in the region. The first concentration of boron at a first position 5 nm away from the peak toward the silicon oxide layer side is 1×10 18 cm -3 or more, the second concentration of carbon at the first position is 1×10 18 cm -3 or more, the third concentration of the element at the first position is 1×10 18 cm -3 or more, the second concentration is 80% or more and 120% or less of the first concentration, and the third concentration is 80% or more and 120% or less of the first concentration.
Owner:KK TOSHIBA

Process for reducing the boron concentration in a semiconductor layer

The present disclosure provides a process for reducing the boron concentration in a semiconductor layer (12) of a semiconductor-on-insulator substrate (1), comprising: at least one thermal treatment cycle, each cycle including thermally oxidizing the semiconductor layer (12) to form an oxide layer (120) on the semiconductor layer (12), wherein boron atoms from the semiconductor layer (12) diffuse into the oxide layer (120) such that boron segregation causes the semiconductor layer (12) to be boron deficient at its interface with the oxide layer (120); removing the oxide layer (120); Including, thermally oxidizing includes increasing the temperature above a target thermal oxidation temperature in an inert atmosphere and then decreasing the temperature to the target thermal oxidation temperature to create a temperature gradient within the substrate to induce a higher rate of formation of the oxide layer (120) at the center of the semiconductor layer than at the edges; Regarding the process.
Owner:SOITEC SA

Boron-doped single-crystal diamond film

There is provided a novel boron-doped single-crystal diamond film that has an increased concentration of boron contained in the boron-doped single-crystal diamond film, and also has a controlled plane orientation and a controlled thickness, has an increased area and a reduced resistivity, and is easy to produce. A boron-doped single-crystal diamond film having a boron concentration of 2×1020 atms / cm3 or more, a metal element concentration of less than 1×1016 atms / cm3, a nitrogen concentration of 0.2 ppm or less, a thickness in a range of 10 to 500 μm, and an off-angle in a {001} plane orientation in a range of 0.1 to 4.0°.
Owner:EDP CORP

A high-boron-loading manganese-based diagnosis and treatment integrated boron medicine and a preparation and application thereof

This invention discloses a high-boron-loading manganese-based boron drug for BNCT diagnosis and treatment, its preparation, and its application, belonging to the fields of biomedicine and nuclear medicine. The boron drug structure is shown in general formula 7, with manganese porphyrin as the core skeleton. A benzene ring side chain at the meso position of the porphyrin ring is connected to a boron-10-containing catechol borate ester group via an amide bond. All boron atoms are boron-10 isotopes. The preparation method includes: first constructing the manganese porphyrin skeleton through condensation, cyclization, and metal coordination reactions; then independently preparing boron source units; and finally obtaining the target product through amide bond coupling. This boron drug possesses high boron-10 loading, efficient blood-brain barrier penetration, and excellent MRI imaging performance, enabling real-time and precise monitoring of boron drug distribution in vivo. The quantitative correlation between imaging signals and boron concentration guides the timing of neutron irradiation, integrating MRI tracing and BNCT treatment, effectively solving the problems of low boron loading, inability to penetrate the blood-brain barrier, and difficulty in real-time monitoring of in vivo distribution in existing boron drugs.
Owner:NANTONG UNIV

A precise calculation method and automatic calculation system for lifting the upper limit of the reactor control rod bank of a third-generation pressurized water reactor nuclear power plant

The application provides a precise calculation method and an automatic calculation system for the upper limit of a reactor control rod bank of a third-generation pressurized water reactor nuclear power plant. The precise calculation method can obtain the upper limit of the control rod bank under the conditions of any burnup, any power and any boron concentration, considering the actual operation of the reactor, and effectively supports the accurate control of the reactor by the nuclear power plant operators. In order to more conveniently and automatically calculate the upper limit of the control rod bank, the automatic calculation system is developed on the basis of the precise calculation method, thereby overcoming the shortcomings of long time consumption and high error rate of manual calculation, and further ensuring the accurate control of the upper limit of the control rod bank by the nuclear power plant operators. The automatic calculation system is repeatedly debugged and actually verified, proving the practicability of the upper limit of the control rod bank fast calculation system, and having a good industrial application prospect.
Owner:SHANDONG NUCLEAR POWER CO LTD

BNCT treatment plan reverse planning method

The invention relates to the technical field of radiotherapy planning, in particular to a BNCT treatment plan reverse planning method which comprises the steps of calibration condition selection, target region and region-of-interest definition, boron concentration initialization, reference dose calculation and normalization, objective function construction and iteration initialization and boron concentration optimization iteration. Updating and circulating parameters, and judging convergence and stopping circulation; the invention creatively provides a BNCT reverse treatment planning method with uniform biological effective dose as a target, has significant advantages in optimization effect, has clear feasibility in operation process, and shows a huge prospect of remodeling the existing treatment plan normal form and developing into a future BNCT standardized, individualized and precise treatment plan making method.
Owner:LANZHOU UNIV

Two-parameter detector for BNCT, and two-parameter real-time detection method and system

The invention discloses a two-parameter detector and a two-parameter real-time detection method and system for BNCT, and the detector comprises a sensing element which is made based on a Li2B4O7 crystal; the signal acquisition module is configured to respectively acquire an electric pulse signal and an electric parameter signal for indicating neutron counting from the sensing element; the signal conversion module is used for converting an electric pulse signal for indicating neutron counting into effective pulse counting and converting the electric parameter signal into a resistance parameter; the model calculation module is used for carrying a two-parameter response model and carrying out data processing on the resistance parameters based on the model to obtain corrected neutron flux; the technical problems that in the BNCT treatment process, a gamma-ray energy spectrum analysis method adopted in the prior art is likely to cause interference on the measurement result of the boron concentration, and real-time and rapid monitoring of the boron concentration is difficult to achieve are solved.
Owner:GUO ZHONG YI LIAO KE JI (CHONG QING) YOU XIAN GONG SI

Substrate for electronic device, field effect transistor, and method for manufacturing substrate for electronic device

PCT designated stageWO2026054112A1Surface roughnessSingle crystal
A substrate (1) for an electronic device comprises a first diamond single-crystal layer (2), and a second diamond single-crystal layer (4) on the first diamond single-crystal layer (2). In the first diamond single-crystal layer (2), the nitrogen concentration is less than 20 ppb, the boron concentration is less than 0.01 ppb, the plane orientation of a surface (2A) is (001) plane orientation ± 3.0° or less, and the surface roughness Ra of the surface (2A) is 30 nm or less. In the second diamond single-crystal layer (4), the nitrogen concentration is less than 20 ppb, the boron concentration is 2.0 ppb to less than 20 ppb, the plane orientation of a surface (4A) is (001) plane orientation ± 3.0° or less, the surface roughness Ra of the surface (4A) is 30 nm or less, and the thickness of the second diamond single-crystal layer (4) is 50 to 400 nm. The surface (4A) is hydrogen-terminated by being covered with hydrogen, and has an NO2 adsorption surface (6) formed thereon by adsorption of NO2. 
Owner:SAGA UNIVERSITY

Neutron beam dynamic regulation and control method and system in BNCT process

The invention discloses a neutron beam dynamic regulation and control method and system in a BNCT process, and the method comprises the following steps: constructing a neutron beam-out regulation and control model, and obtaining a mapping relation between the intensity of a neutron beam and a neutron dose rate; dynamically monitoring the boron concentration of the tumor tissue and the boron concentration of the normal tissue to obtain a real-time T / N value; converting the T / N value into neutron beam intensity in real time, and substituting the neutron beam intensity into the neutron beam output regulation and control model to obtain a real-time neutron dose rate; comparing the obtained real-time neutron dose rate with a preset neutron dose rate, and if there is a difference between the real-time neutron dose rate and the preset neutron dose rate, adjusting neutron source parameters until the real-time neutron dose rate is consistent with the preset neutron dose rate; and the step S2 to the step S4 are repeated, and neutron beam dynamic regulation and control in the BNCT process are achieved. According to the invention, the technical problem that the neutron outgoing beam regulation and control precision and efficiency are low due to the fact that the real-time change of the boron concentration is not considered in the prior art can be solved.
Owner:NEUTRON TIMES (QINGDAO) INNOVATION TECH CO LTD +1

Method for determining a biologically effective dose

This disclosure relates to a method for determining bioeffective dose, wherein the method includes: detecting the boron concentration C of each voxel in the target at multiple time points. B ; Calculate C B The corresponding biological effect value (RBE) B Determine C B and RBE B The first association relationship, based on the first association relationship, determines the connection through C. B Characterized RBE B ; Calculate C B The corresponding first physical absorbed dose rate D B And other physical absorbed dose rates corresponding to dose components other than boron, and physical dose rate distribution D phy According to RBE B and D B The product of the other dose components and the product of other biological effect values ​​and other physically absorbed dose rates is used to calculate C. B The combined biological effect value (CBE); based on CBE and D phy Calculate the biologically effective dose D bio According to this disclosure, it is beneficial to determine the appropriate irradiation time for different voxels during BNCT in order to obtain better therapeutic effects.
Owner:HUABORON NEUTRON TECH (HANGZHOU) CO LTD

A method for correcting a critical boron concentration in a full power state

This invention specifically relates to a method for correcting the critical boron concentration under full power conditions. Based on a three-dimensional reactive equilibrium equation and considering the influence of temperature deviation on the Doppler effect, the critical boron concentration under full power conditions is: where CB ref This represents the critical boron concentration at full power; CB m ρ represents the actual boron concentration under the measured conditions. xem Indicates the equilibrium xenon poisoning under measurement conditions; ρ xeref This represents the balanced xenon poisoning at full power; ρ rccam Indicates the reactivity introduced by the control rod under measurement conditions; pr m Indicates the actual power under the measured conditions; HFP represents full power; α pc α represents the average of the sum of the power coefficients under the measured state and the full-power state; b T represents the average of the sum of the differential boron values ​​under the measured state and the full-power state; avgm T represents the average temperature of the moderator under the measured conditions. ref (pr m ) represents the moderator reference temperature under measurement conditions; α ttcm This represents the total temperature coefficient under the measurement conditions. The invention also relates to computer equipment and a computer-readable storage medium, outlining the steps for implementing the above-described method for correcting the critical boron concentration under full power conditions. Based on a three-dimensional reactive equilibrium equation, and considering the influence of temperature deviation on the Doppler effect, this invention achieves accurate correction of the critical boron concentration under full power conditions when nuclear power units increasingly participate in peak shaving.
Owner:CNNC FUJIAN FUQING NUCLEAR POWER

Method for determining boron concentration in silicon-germanium-boron film

The invention discloses a method for determining the boron concentration in a silicon-germanium-boron film, which comprises the following steps of: establishing a silicon-germanium film database which comprises the corresponding relationship between the spectrum diffraction peak position of the silicon-germanium film and the germanium concentration; sequentially dividing the boron concentration of the silicon-germanium-boron thin film into a low-concentration interval, a medium-concentration interval and a high-concentration interval, and forming a silicon-germanium-boron three-section type peak position-boron concentration fitting model according to a spectral diffraction peak position and boron concentration fitting formula in each concentration interval; acquiring a spectral diffraction peak position of a to-be-detected film sample, taking a boron-free silicon-germanium film as a reference film sample under the same process condition, acquiring the spectral diffraction peak position of the silicon-germanium film database through the silicon-germanium film database for peak position comparison, and determining a concentration interval corresponding to the to-be-detected film sample based on a comparison result; selecting a corresponding fitting formula in the silicon-germanium-boron three-section peak position-boron concentration fitting model for calculation so as to obtain an accurate boron concentration value of the to-be-detected film sample; and substituting the accurate value of the boron concentration into the electrical transport model for verification.
Owner:JIANGSU ALPHA-SEMICON EQUIP CO LTD

Boron neutron capture therapy system and treatment plan generation method therefor

A boron neutron capture therapy (BNCT) system includes a neutron beam irradiation device, a treatment planning module, and a control module. The neutron beam irradiation device is used to generate a therapeutic neutron beam during irradiation therapy and irradiate same to an irradiated body that has ingested a boron (10B)-containing drug so as to form an irradiated site. According to medical image data of the irradiated site and a parameter of the therapeutic neutron beam generated by the neutron beam irradiation device, the treatment planning module performs a dosage simulation calculation and generates a treatment plan, the medical image data of the irradiated site comprising tissue-related information and boron (10B) concentration-related information. The control module retrieves, from the treatment planning module, a treatment plan corresponding to the irradiated body, and controls the neutron beam irradiation device to perform irradiation therapy on the irradiated body according to the treatment plan.
Owner:NEUBORON THERAPY SYST LTD

Melanoma-based boron concentration distribution model acquisition method, terminal and medium

The application provides a melanoma-based boron concentration distribution model acquisition method, a terminal and a medium. The target area of melanoma, the microneedle administration area and the administration concentration are obtained, PET image data of the target area at each sampling time after microneedle administration is collected, microneedle boron concentration data of the administration area at each sampling time is collected, a sample data set is constructed based on the PET image data and the corresponding microneedle boron concentration data, iterative training of the boron concentration distribution model is performed based on the sample data set, and a trained boron concentration distribution model is obtained. The method provided by the application can not only quickly and conveniently obtain the simulation result of the boron concentration distribution corresponding to each time, but also effectively improve the data resolution of the simulation result of the boron concentration distribution and improve the accuracy of the boron concentration distribution data, thereby providing a data basis for subsequent BNCT analysis and treatment scheme formulation.
Owner:HUABORON NEUTRON TECH (HANGZHOU) CO LTD

Nitride semiconductor, semiconductor device, and method for manufacturing the nitride semiconductor

According to one embodiment, a nitride semiconductor includes a base body including boron, a first nitride region including Alx1Ga1-x1N (0.98<x1≤1), and a second nitride region including Alx2Ga1-x2N (0≤x2<1, x2<x1). A concentration of boron in the base body is not less than 1×1019 cm−3. The first nitride region is between the base body and the second nitride region. The first nitride region includes a first surface facing the base body and a second surface facing the second nitride region. A second concentration of boron in the second surface is not more than 1 / 8000 of a first concentration of boron in the first surface.
Owner:KK TOSHIBA +1

Diagnosis and treatment integrated BODIPY boron medicine with high boron-10 loading capacity and preparation method of diagnosis and treatment integrated BODIPY boron medicine

The invention relates to a diagnosis and treatment integrated BODIPY boron medicine with high boron-10 loading capacity and a preparation method thereof, and belongs to the technical field of biomedicine and nuclear medicine. The boron medicine takes BODIPY molecules with D-pi-A characteristics as a skeleton, and a-CF3 strong electron withdrawing group is introduced to a meso site, so that a spectrum is subjected to red shift, and the tissue penetrating power is enhanced; meanwhile, natural boron in a BODIPY framework is replaced by boron-10, and intramolecular ortho-dihydroxyl is used as a boric acid coordination group, so that the boron loading capacity is remarkably improved, and the requirement of BNCT on the high boron-10 concentration is met. The preparation has the dual-mode functions of fluorescence imaging and photoacoustic imaging, can noninvasively monitor the distribution and metabolism dynamic state of the boron drug in vivo in real time, and accurately guides the neutron irradiation opportunity through the quantitative relationship between the imaging signal and the boron concentration, thereby realizing the integrated coordination from drug delivery to treatment planning. According to the invention, the key problems of low boron loading capacity and incapability of real-time monitoring of the existing BNCT boron medicine are solved, and the damage to normal tissues is reduced while the treatment effect is improved.
Owner:NANTONG UNIV

Method and device for predicting boron concentration of nuclear reactor

The invention relates to the technical field of reactor core control and safety, in particular to a method and a device for predicting the boron concentration of a nuclear reactor. The method comprises the following steps: determining burnup calculation deviation of critical boron concentration before shutdown of a reactor; obtaining the re-critical theoretical boron concentration of the reactor when the reactor is critical; determining a critical boron concentration calculation deviation; and according to the critical boron concentration calculation deviation, the burn-up calculation deviation and the re-critical theoretical boron concentration, determining the target re-critical boron concentration. According to the method, boron concentration correction is carried out only through the deviation in the burn-up correction process and the deviation in the power feedback process under the condition that additional program calculation does not need to be carried out, and it is guaranteed that the deviation between the corrected theoretical re-critical boron concentration and the corrected actual re-critical boron concentration is greatly reduced; the problem that the deviation between the predicted value and the measured value of the re-critical boron concentration in the nuclear life period is too large is effectively solved.
Owner:CHINA NUCLEAR POWER TECH RES INST CO LTD

A system and method for on-line boron concentration detection in a nuclear power plant

PendingCN122361369ANuclear powerPlasma spectroscopy
This invention discloses an online boron concentration detection system and method for nuclear power plants. The system includes: a sample introduction module for pretreating a boron-containing aqueous sample to obtain a sample aerosol, and delivering the sample aerosol to the reaction end; a microwave plasma torch generation module for receiving the sample aerosol delivered by the sample introduction module and forming a high-temperature microwave plasma torch through microwave field coupling, then generating a characteristic spectrum through the high-temperature microwave plasma torch; and a characteristic spectrum identification and concentration detection module for acquiring the characteristic spectrum and performing qualitative identification and quantitative calculation to obtain the corresponding boron element concentration data. This invention, by employing microwave-induced plasma spectroscopy technology, enables accurate online analysis of boron concentration in liquid samples, thereby improving the detection accuracy and efficiency of boron.
Owner:CHINA NUCLEAR POWER ENGINEERING COMPANY LTD

Method for predicting boron distribution in corrosion product deposit layers based on variable porosity

A method for predicting boron distribution in corrosion product deposits based on variable porosity is proposed. This method constructs the adsorption equilibrium of boron within the deposit layer through adsorption kinetics, obtaining the dynamically changing porosity of the corrosion product deposit layer. Transport equations for boron convection, diffusion, adsorption, and precipitation are then established. A mathematical model of boron transport coupled with chemical reactions based on dynamic variable porosity is obtained by discretization using the finite volume method. The model is iteratively solved to obtain the boron distribution under dynamic variable porosity in the corrosion product deposit layer. This invention can realize variable porosity during the boron precipitation process within the corrosion product layer and accurately predict the boron concentration distribution under variable porosity caused by boron precipitation in the corrosion product deposit layer.
Owner:SHANGHAI JIAOTONG UNIV

Boron-lithium coordination control method for primary loop of nuclear power plant

The invention discloses a boron-lithium coordination control method for a primary loop of a nuclear power plant. The method comprises the following steps: S1, acquiring historical data of a plurality of nuclear power plants, wherein the historical data comprises a plurality of groups of historical primary loop pH values and corresponding boron concentrations and lithium concentrations; s2, according to historical data statistics, generating a relational expression of lithium concentration and boron concentration corresponding to a plurality of pH values; and S3, obtaining the current boron concentration and the current lithium concentration, and calculating and generating a coordination scheme according to the relational expression. By implementing the technical scheme of the invention, an accurate and reliable boron-lithium concentration relational expression can be generated based on historical data, and a coordination scheme can be automatically generated based on the relational expression to control the pH value of a loop, so that the working efficiency is improved, and the human-caused failure problem is reduced.
Owner:CGN HUIZHOU NUCLEAR POWER CO LTD