Preparation of boron doped diamond superconduction material

Abstract

The invention relates to a preparation method of boron dope diamond superconducting material, including the following steps: traditional synthetic boron dope diamond technology is used for carrying out pretreatment on an internal cavity body, a clean substrate is placed on the substrate pad of the inner cavity after pretreatment, and the traditional hot-filament chemical vapor deposition method is used for depositing a diamond film transition layer; the deposit growth conditions are as follows: the voltage bias applied on the substrate is zero, reaction gases of methane and hydrogen are led in through two paths, the volume ratio of the two paths of gases is (2-10): 100, the temperature of the substrate is in the range from 800 DEG to 1000 DEG by adjusting the distance between the substrate and the filament, the gas pressure is 20-60 Torr, and the growth time lasts 0.5-1.5 hours; the growth conditions of compositing the diamond film transition layer are remained, and the boron dope diamond superconducting material is continuously grown for at least 3 hours to obtain the boron dope diamond superconducting material. The method not only has the advantages of low cost and high flexibility but also obtains the boron dope diamond superconducting material with higher carrier concentration and higher superconducting transition temperature.

Description

technical field [0001] The invention relates to a preparation method of a boron-doped diamond superconducting material, in particular to a process of combining the cavity inner wall pretreatment technology with pre-deposition of a diamond film transition layer on a substrate by using a hot filament chemical vapor deposition system. A method for preparing a boron-doped diamond superconducting material on a non-diamond substrate. Background technique [0002] The synthesis and characterization of doped diamond materials have always been the focus of attention, especially the synthesis of boron-doped diamond superconducting materials and the characterization of their superconducting properties have been research hotspots in the past two years, among which boron-doped diamond materials The design and preparation of nanomaterials are the basis and key to achieve the purpose of superconductivity. There are mainly two methods for preparing boron-doped diamond superconducting mater...

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Problems solved by technology

[0003] The object of the present invention is: in order to solve the existing process of using high temperature and high pressure sintering technology to prepare boron-doped diamond superconducting particles, the boron-doped superconducting diamond is obtained by mutual diffusion and reaction of two substances, wherein The boron content is not only difficult to control, but also unevenly distributed, as well as the problems of low effective doping concentration and low superconducting transition temperature caused by a large number of interstitial doping; it is also necessary to overcome the microwave plasma-assisted chemical vapor deposition method to synthesize boron-doped In the process of heterodiamond superconducting film, the preparation cost is high, the growth rate is low, the film forming area is difficult to expand, and the superconducting transition temperature of the prepared diamond film is not high enough.

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