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84 results about "Present day" patented technology

The term "present-day" (as an adjective) or "present day" (as a noun) is used to describe the approximate period of time that surrounds the present. Depending on the context, this period may be as narrow as referring to the immediate moment, or as broad as referring to the current year or decade. In general the term is used to refer to the contemporary era at the time it is used.

High mobility heterojunction complementary field effect transistors and methods thereof

InactiveUS7057216B2High hole mobilitySimilar current carrying capabilityTransistorSolid-state devicesHeterojunctionPresent day
In all representative embodiments presented, the Ge concentration in the source and drain 10 and the SiGe epitaxial channel layer 20 is in the 15% to 50% range, preferably between about 20% to 40%. The SiGe thicknesses in the source / drain 10 are staying below the critical thickness for the given Ge concentration. The critical thickness is defined such that above it the SiGe will relax and defects and dislocations will form. The thickness of the SiGe epitaxial layer 20 typically is between about 5nm and 15nm. The thickness of the epitaxial Si layer 30 is typically between about 5nm and 15nm. FIG. 1A shows an embodiment where the body is bulk Si. These type of devices are the most common devices in present day microelectronics. FIGS. 1B and 1C show representative embodiment of the heterojunction source / drain FET device when the Si body 40 is disposed on top of an insulating material 55. This type of technology is commonly referred to as silicon on insulator (SOI) technology. The insulator material 55 usually, and preferably, is SiO2. FIG. 1B shows an SOI embodiment where the body 40 has enough volume to contain mobile charges. Such SOI devices are called partially depleted devices. FIG. 1C shows an SOI embodiment where the volume of the body 40 is insufficient to contain mobile charges. Such SOI devices are called fully depleted devices. For devices shown in FIG. 1B and 1C there is, at least a thin, layer of body underneath the source and drain 10. This body material serves as the seed material onto which the epitaxial SiGe source and drain 10 are grown. In an alternate embodiment, shown in FIG. 1D. for extremely thin fully depleted SOI devices, one could grow the source and drain 10 laterally, from a lateral seeding, in which case the source and drain 10 would penetrate all the way down to the insulating layer 55.
Owner:GLOBALFOUNDRIES US INC

Health amount-of-exercise managing device

To permit a person to take a power-striding most effective to be healthy the quantity of exercising is managed by using, in combination, bioelectrical impedance measuring means 110; personal data inputting means 120; body fat rate calculating means 130 for determining the body fat rate on the basis of the personal data and the value of bioelectrical impedance; target body fat rate setting means 140; target calorie consumption calculator means 150 for calculating the calorie consumption required to attain the target body fat rate; management period setting means 160 for setting a length of period required to attain the target body fat rate; healthful calorie consumption calculator means 170 for calculating the calorie consumption per day within the management period; walking calorie per minute calculating means 180 for calculating caloric quantity consumed by walking per minute in consideration of the individual basal metastasis; healthful exercise quantity calculating means 190 for calculating the healthful exercise quantity per day required to consume the healthful calorie per day; exercise quantity measuring means 200; calorie consumption per day calculating means 210 for determining the calorie consumption on the basis of the so measured exercise quantity; and healthful exercise quantity correcting means 220 for comparing the calorie consumption per day of the previous day with the target value of the present day and for converting any difference therebetween in terms of exercise quantity, thereby renewing the healthful exercise quantity of the present day.
Owner:YA MAN LTD

Power distribution network and micro power grid coordination optimization method based on price excitation mechanism

InactiveCN107392395ARealize safe and economical operationEnergy industryForecastingPresent dayMicrogrid
The invention relates to a power distribution network and micro power grid coordination optimization method a based on a price excitation mechanism; the method comprises the following steps: building a power distribution network and micro power grid interactive mechanism: using each time period in the final transaction scheme of each micro power grid and the power distribution network exchange power as known parameters, optimizing to obtain a coordination scheduling scheme, wherein the interactive mechanism comprises micro power grid economy scheduling optimization based on day-ahead electricity price and power distribution network optimization based on the micro power grid scheduling result; in the micro power grid economy scheduling optimization aspect: building a micro power grid linearity economy scheduling model, using a linearization method to process non-linear items in said model, wherein the model contains 0 / 1 variables and each equipment output power continuous variables, and a mixed integer linear programming problem is formed. In the power distribution network micro power grid scheduling optimization aspect: obtaining the power distribution network operation cost under present day-ahead transaction electricity price according to each micro power grid economy scheduling scheme result, optimizing the day-ahead transaction electricity price of the power distribution network and each micro power grid, thus obtaining the transaction electricity price scheme with the lowest power distribution network operation cost.
Owner:TIANJIN UNIV
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