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P-type doped perovskite-based photoelectric functional material and application thereof

A photoelectric functional material, perovskite technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of efficiency loss, low photoelectric conversion efficiency, low open circuit voltage and fill factor, etc., to achieve improved electrical performance and low cost. , the effect of improving hole mobility and electrical conductivity

Inactive Publication Date: 2016-03-16
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, there are also some problems or deficiencies in the above-mentioned scheme. The open-circuit voltage and fill factor of the modified perovskite-based battery based on the above-mentioned scheme are relatively low, which leads to the low photoelectric conversion efficiency.
The low open-circuit voltage and fill factor may be due to the severe electron-hole recombination caused by the low conductivity and hole mobility of the amphiphilic modified perovskite, which in turn leads to severe efficiency loss.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] In this embodiment, preferably A1 is CH 3 NH 3 + , B is Pb 2+ , X1 is I - , and x=1, y=3, the corresponding perovskite-based photoelectric functional material chemical formula is CH 3 NH 3 PB 3 , the concrete implementation steps of this material preparation are as follows:

[0027] (1) Weigh 0.461gPbI 2 and 159gCH 3 NH 3 I (according to the stoichiometric ratio 1:1) was completely dissolved in 0.7ml DMF to obtain solution A;

[0028] (2) Weigh 0.016gLiClO 4 (relative to CH 3 NH 3 PB 3 The mass fraction is 15%) completely dissolved in 0.3mlDMF to obtain solution B;

[0029] (3) Add solution B to solution A and mix well to obtain LiClO 4 doped perovskite precursor solution C;

[0030] (4) Take an appropriate amount of perovskite precursor solution C and fill it in a mesoscopic solar cell based on a carbon counter electrode, and dry it at 100 °C.

[0031] The open circuit voltage (V oc ), short circuit current (J sc ), fill factor (FF) and photoelectric...

Embodiment 2

[0034] In this embodiment, the perovskite-based photoelectric functional material is the same as that in Embodiment 1, and its chemical formula is

[0035] CH 3 NH 3 PB 3 , A1 is CH 3 NH3 + , B is Pb 2+ , X1 is I - , and x=1, y=3, but the dopant in this embodiment is different from that in Embodiment 1. The specific implementation steps of this embodiment are as follows:

[0036] (1) Weigh 0.461gPbI 2 and 159gCH 3 NH 3 I (according to the stoichiometric ratio 1:1) was completely dissolved in 0.7ml DMF to obtain solution A;

[0037] (2) Weigh 0.0156gLiCF 3 SO 3 (relative to CH 3 NH 3 PB 3 The mass fraction is 10%) completely dissolved in 0.3mlDMF to obtain solution B;

[0038] (3) Add solution B to solution A and mix well to obtain LiCF 3 SO 3 doped perovskite precursor solution C;

[0039] (4) Take an appropriate amount of perovskite precursor solution C and fill it in a mesoscopic solar cell based on a carbon counter electrode, and dry it at 100 °C.

[004...

Embodiment 3

[0043] In this example, A1 is CH 3 NH 3 + , B is Pb 2+ , X1 is I - , X2 is BF 4 - , and x=1, y=2.95, the corresponding perovskite-based photoelectric functional material chemical formula is CH 3 NH 3 PB 2.95 (BF 4 ) 0.05 , the concrete implementation steps of this material preparation are as follows:

[0044] (1) Weigh 0.461gPbI 2 , 0.151gCH 3 NH 3 I and 0.006g CH 3 NH 3 BF 4 Completely dissolved in 0.7ml DMF to obtain solution A;

[0045] (2) Weigh 0.0144gLiN(CF 3 SO 2 ) 2 (relative to CH 3 NH 3 PB 2.95 (BF 4 ) 0.05 The amount fraction of the substance is 5%) to be completely dissolved in 0.3mlDMF to obtain solution B;

[0046] (3) Add solution B to solution A and mix thoroughly to obtain LiN(CF 3 SO 2 ) 2 doped perovskite precursor solution C;

[0047] (4) Take an appropriate amount of perovskite precursor solution C and fill it in a mesoscopic solar cell based on a carbon counter electrode, and dry it at 100 °C.

[0048] The open circuit voltag...

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Abstract

The invention discloses a P-type doped perovskite-based photoelectric functional material, prepared by taking a perovskite-based photoelectric functional material ABX3 as a substrate and organic or inorganic doping agent as a P-type doping agent for doping purpose. The chemical formula of the obtained perovskite-based photoelectric functional material is (A1)<x>(A2)<1-x>B(X1)<y>(X2)<3-y>, wherein 0<=x<=1, 0<=y<=3, A1 is a monovalent organic or inorganic cation, A2 is a monovalent organic or inorganic cation, B is a divalent metal cation, and X1 or X2 is a monovalent anion. The invention further discloses a corresponding preparation method and a solar cell and the like comprising the photoelectric functional material. The P-type doped perovskite-based photoelectric functional material has the advantages that carrier concentration, hole mobility and conductivity can be improved; the perovskite-based photoelectric functional material with excellent electrical property can be obtained; and the preparation method is simple and low in cost.

Description

technical field [0001] The invention relates to a perovskite-based photoelectric functional material and a preparation method thereof, belonging to the technical field of photoelectric functional materials. Background technique [0002] Perovskite material ABX3 (such as CH 3 NH 3 PB 3 ) As a material with excellent photoelectric performance, high photoelectric conversion efficiency, the perovskite material with ABX3 structure has its unique crystal structure, and also exhibits excellent performance. For example, this type of material has high carrier mobility, high hole rate, high molar extinction coefficient, good bipolar charge transport, small exciton binding energy and adjustable band gap. There is a strong absorption in the range of 800nm. In addition, electrons and holes have a long lifetime in the ABX3 perovskite material, and the carrier diffusion length reaches 100nm, making charge separation easier. Therefore, the above-mentioned perovskite materials have been...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46
CPCH10K85/00H10K30/10Y02E10/549
Inventor 韩宏伟陈江照
Owner HUAZHONG UNIV OF SCI & TECH
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