422 results about "Integrated circuit packaging" patented technology

An electronic device can be validated at a circuit-level or device-level to provide supply chain verification of an integrated circuit (IC) product. A modern integrated circuit package can comprise multiple dies, systems and circuitry built from a variety of device-level structures. Device-level verification disclosed herein can confirm that a device-level (sub-) component of an integrated circuit product is sourced by a known or otherwise valid manufacturer. This serves to mitigate or avoid a hacking attempt involving illicit replacement of a component of an IC product by an intermediate handler of the IC product within a supply chain.

A method and system are directed to generating, using a plurality of candidate machine learning models, a plurality of prediction outputs based on a testing dataset; determining, using the plurality of prediction outputs, a best-performing machine learning model from the plurality of candidate machine learning models based on one or more evaluation metrics; generating, using the best-performing machine learning model, one or more CAM images for an input image; and generating one or more counterfactual explanations based on the one or more CAM images and a subset of prediction outputs of the plurality of prediction outputs that correspond to the best-performing machine learning model.

The invention discloses an integrated circuit packaging method, which comprises the following steps of: 1, constructing a thermal expansion gradual change buffer layer, and arranging a buffer transition layer with a thermal expansion coefficient changing step by step between a chip and a re-wiring layer to realize smooth transition of thermal deformation between different materials, so that interface stress concentration caused by mismatching of thermal expansion is reduced; 2, flexible stress absorption layers are introduced, and the flexible stress absorption layers with elastic deformation capacity are arranged between the chip and the rewiring layer and between the rewiring layer and the substrate. A gradual change buffer structure with a thermal expansion coefficient changing step by step is introduced between a chip and a re-wiring layer and between the re-wiring layer and a substrate, and a flexible stress absorption layer with an elastic deformation capability is combined, so that thermal expansion mismatch transits from sudden change to continuous change, and generation of thermal stress in packaging is weakened from the source.

The invention relates to the technical field of integrated circuit packaging, solves the problem that a calibration process in the prior art lacks a stable displacement reference consistent with actual movement of equipment, and provides an integrated circuit visual positioning calibration method based on a pulse displacement reference and a medium. The method comprises the following steps: controlling a motion platform to move along a first direction and a second direction from a preset starting point according to a preset pulse number, and obtaining a calibration data set; acquiring pulse deviation data and pixel change data according to the calibration data set; according to the pulse deviation data and the pixel change data, obtaining a rotation deviation angle between the motion coordinate system and the imaging coordinate system; and when a target chip comprising an integrated circuit is subjected to die bonding, compensating a conversion relation between an imaging coordinate system and a motion coordinate system according to the rotation deviation angle. According to the invention, pulse displacement is introduced as a unified calibration reference, and the reliability of a visual positioning result in an integrated circuit die bonding process is improved.

In an embodiment, a device includes: an integrated circuit die including a die connector; a first through via adjacent the integrated circuit die; an encapsulant encapsulating the first through via and the integrated circuit die; and a redistribution structure on the encapsulant, the redistribution structure including a redistribution line, the redistribution line physically and electrically coupled to the die connector of the integrated circuit die, the redistribution line electrically isolated from the first through via, the redistribution line crossing over the first through via.

The invention relates to the technical field of an integrated circuit appearance inspection enhancement method for improving packaging reliability, particularly discloses an integrated circuit appearance inspection enhancement method for improving packaging reliability, and aims to solve the problems that in the prior art, the detection sensitivity of microdefects in packaging is low, and reliability evaluation lacks a quantitative basis. The method comprises the following steps: synchronously acquiring optical, infrared and X-ray multi-mode appearance data; fusing and constructing a three-dimensional geometry and material distribution model of the packaging structure; extracting three defect features of geometric morphology, thermal response and structural integrity; performing defect collaborative identification and risk grading through a weighted fusion strategy; and finally generating a structured inspection report containing defect information, risk levels and reliability prediction. According to the technical scheme, high-precision detection and reliability quantitative evaluation of potential defects such as microcracks, welding spot holes and packaging layering can be achieved, and the packaging quality control level and the detection efficiency of an integrated circuit are remarkably improved.

Semiconductor three-dimensional integrated circuit packages and methods of forming the same are disclosed herein. A method includes bonding a semiconductor chip package to a substrate and depositing a thermal interface material on the semiconductor chip package. A thermal lid may be placed over and adhered to the semiconductor chip package by the thermal interface material. The thermal lid includes a wedge feature interfacing the thermal interface material. The thermal lid may be adhered to the semiconductor chip package by curing the thermal interface material.

The invention discloses a signal integrity simulation analysis method for a digital radio frequency hybrid microsystem, and belongs to the field of advanced packaging of integrated circuits. According to the method, a complete analysis process accompanied with product research and development is established, systematic work of qualitative simulation evaluation, rule design and quantitative analysis verification is sequentially carried out in various stages of project approval demonstration, scheme design, design verification and the like of product design, and process conditions, material characteristics and rationality and feasibility of system layout are rapidly evaluated; qualitative support is provided for agile design of the scheme; designing rules and optimization ranges of structures such as a radio frequency link, a digital link and a coupling shield are formulated according to process and material rules, and accurate initial input is provided for comprehensive design of a product; according to the layout wiring form, digital, radio frequency and coupling areas are formed through division, time domain analysis, frequency domain analysis and near field analysis are carried out in a targeted mode, quantitative reference is provided for judging design reasonability, and an effective basis is provided for optimizing design content.

A microelectronics device with anti-counterfeiting measures that includes an integrated circuit packaging and a piezoelectric element embedded on the integrated circuit packaging, such as on the surface of the integrated circuit packaging. The piezoelectric element is configured to generate a unique identification code in response to a series of controlled mechanical stresses being applied to the piezoelectric element. Due to the inherent variability in piezoelectric responses, there is a high degree of uniqueness in the identification code making them extremely difficult for counterfeiters to replicate. Furthermore, by applying different stress sequences, a multitude of unique identification codes can be generated from a single piezoelectric element providing an additional layer of security. In this manner, by embedding a piezoelectric element on the integrated circuit packaging, a highly secure, cost-effective, and difficult to replicate anti-counterfeiting technique for the microelectronics industry has been developed.

An integrated circuit package may include a base die, a host device, a first bonding interface, a stacked memory structure, and a second bonding interface. The base die may include a first surface and a second surface. The host device may be disposed on the first surface of the base die. The first bonding interface may be located between the first surface of the base die and the host device. The stacked memory structure may be disposed on the first surface of the base die. The second bonding interface may be located between the first surface of the base die and the stacked memory structure.

The invention relates to the technical field of semiconductor manufacturing, discloses a high-precision positioning integrated circuit packaging film stripping system, and aims to overcome the defects in the aspects of flexible material processing, positioning precision stability, operation efficiency and the like in the prior art. The system comprises a high-precision visual positioning unit which is used for collecting a packaging film surface image and extracting a submicron positioning reference point coordinate; the flexible contact type clamping unit is used for fixing the edge area of the packaging film in a low-stress mode in the stripping process; and the six-degree-of-freedom precision motion platform is used for bearing and driving the flexible contact type clamping unit to execute a preset stripping track in a three-dimensional space. According to the technical scheme, submicron spatial positioning precision can be achieved, local stress concentration is remarkably reduced, material deformation is dynamically sensed and compensated, external interference is effectively isolated, the positioning process is simplified, and the overall efficiency and yield are improved.

A device package including an interposer. The interposer comprising: a semiconductor substrate; first through vias extending through the semiconductor substrate; an interconnect structure comprising: a first metallization pattern in an inorganic insulating material; and a passivation film over the first metallization pattern; and a first redistribution structure over the passivation film. The first redistribution structure comprising a second metallization pattern in an organic insulating material. The device package further including an integrated circuit die over and attached to the interposer; and a first encapsulant around the integrated circuit die.

A pin fin placement assembly utilized to form pin fins in a thermal dissipating feature is provided. The pin fin placement assembly may place the pin fins on an IC die disposed in the IC package. The pin fin placement assembly may assist massively placing the pin fins with desired profiles and numbers on desired locations of the IC die. The plurality of pin fins is formed in a first plurality of apertures in the pin fin placement assembly. A thermal process is then performed to solder the plurality of pin fins on the IC die.

The utility model belongs to the technical field of integrated circuit packaging, and discloses an isolator chip packaging heat dissipation structure which comprises a ceramic substrate, an isolator chip and a heat dissipation assembly, the front face of the ceramic substrate is provided with an isolation groove and a heat dissipation channel, an electromagnetic shielding layer is embedded in the isolation groove, and the heat dissipation channel is provided with a heat dissipation hole. An isolation groove is formed in the ceramic substrate, the heat dissipation channel penetrates through the ceramic substrate and is distributed in a spiral shape, the isolator chip is packaged in the isolation groove, the isolator chip is electrically connected with the ceramic substrate, the heat dissipation assembly comprises a metal heat conduction layer and an insulation buffer layer which are stacked alternately, and the heat dissipation assembly is fixed to the back face of the ceramic substrate and communicated with the heat dissipation channel. According to the utility model, the electromagnetic shielding layer and the spiral heat dissipation channel are arranged on the ceramic substrate, so that the anti-interference of high-frequency signals is realized, the heat dissipation area is expanded, the heat dissipation efficiency of the isolator chip is improved, and the stability and reliability of the isolator chip in a high-temperature and high-power environment are ensured.

Disclosed herein are microelectronic assemblies and related devices and methods. In some embodiments, a microelectronic assembly may include a first layer having a first dielectric, a third dielectric, and a first glass portion between the first dielectric and the third dielectric; a second layer having a second dielectric, a fourth dielectric, and a second glass portion between the second dielectric and the fourth dielectric; and a third layer between the first layer and the second layer, the third layer having a bulk glass material, and wherein the first layer physically couples to a first surface of the third layer and the second layer physically couples to a second surface of the third layer.

A device package includes a first die comprising a semiconductor substrate; an isolation layer on the semiconductor substrate, wherein the isolation layer is a first dielectric material; a first dummy via penetrating through the isolation layer and into the semiconductor substrate; a bonding layer on the isolation layer, wherein the bonding layer is a second dielectric material that has a smaller thermal conductivity than the first dielectric material; a first dummy pad within the bonding layer and on the first dummy via; a dummy die directly bonded to the bonding layer; a second die directly bonded to the bonding layer and to the first dummy pad; and a metal gap-fill material between the dummy die and the second die.

1. The name of the design product: integrated circuit package form (DFN2020-8L). 2. The use of the design product: for packaging chips. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: design 1 perspective view. 5. Design 1 is designated as the basic design.

A method includes providing an IC package having a lead and a die encapsulated in a mold compound. The mold compound extends from a top mold surface to a base mold surface of the IC package. The method also includes trenching the mold compound from the top mold surface to the lead to form a trench. The method further includes forming a vertical wettable flank by filling the trench with a conductive material.

The application relates to the technical field of integrated circuit packaging, in particular to an integrated circuit packaging piece, a packaging substrate and manufacturing steps thereof, which comprise a limiting rod, the surface of the limiting rod is provided with the packaging substrate; a lifting rod, the surface of the lifting rod is provided with a first spring, the surface of the lifting rod is fixed with an extension plate, the surface of the extension plate is provided with a first through hole, a fixing block is inserted into the first through hole, the surface of the extension plate is fixed with an elastic plate, the surface of the packaging substrate is fixed with a supporting rod; and a second through hole is arranged on the surface of the elastic plate; beneficial effects are that a screw rod is arranged in the packaging substrate, the screw rod drives the packaging substrate to move on the surface of the limiting rod, when the packaging substrate stops on the surface of the limiting rod, a sliding block moves in a sliding groove, the insertion block moves into a clamping groove, a deformation block is arranged in the clamping groove, the insertion block is supported on the surface of the deformation block, the deformation block is deformed, and the insertion block is inserted into the clamping groove, so that the lifting plate moves upwards.

An integrated circuit package and the method of forming the same are provided. The integrated circuit package may include an integrated circuit die and a dielectric material on sidewalls of the integrated circuit die. The integrated circuit die may include a substrate, a protective structure in the substrate, an interconnect structure on the substrate, and a seal ring structure in the interconnect structure and in contact with the protective structure. The protective structure and the substrate may include a same semiconductor material, and the protective structure may include a first dopant and a second dopant different from the first dopant. The interconnect structure may include dielectric layers and conductive features in the dielectric layers. The seal ring structure may encircle the conductive features of the interconnect structure in a top-down view.

This utility model relates to the field of circuit packaging technology, and in particular to an integrated circuit packaging structure, including a packaging box, a packaging cover, and a heat sink. The packaging box has a packaging cover on top, and the packaging cover has a heat sink on top. In this utility model, the packaging box, packaging cover, and heat sink are configured such that the cover is installed on the top of the box, and rubber gaskets are installed inside the ring and on the top of the cover. A locking stud is threaded inside the sleeve, and the connecting plate and the top of the cover are threaded together by the stud, so that the heat sink is inserted into the inside of the top of the cover. Circuit board potting compound is filled into the box and the cover through the potting hole, so that the bottom of the heat sink is immersed in the top surface of the circuit board potting compound. The packaging structure facilitates modular assembly before potting, and the packaging structure uses an integrated potting water-cooling heat dissipation auxiliary component to improve the heat dissipation effect of the integrated circuit packaging structure.

The present invention is directed to a multilayer capacitor, a circuit board containing the multilayer capacitor, and an integrated circuit package containing the multilayer capacitor. A multilayer capacitor includes a body containing alternating dielectric layers and internal electrode layers that each include a first electrode and a second, co-planar electrode, the first electrode having a main body with at least one lead tab extending from each of a top edge and a bottom edge thereof. The capacitor also includes a first external terminal and a second external terminal that each wrap from a top surface, along an end surface, to a bottom surface. The first external terminal is electrically connected to the first electrode of the first internal electrode layers along its lead tab leading edges, and the second external terminal is electrically connected to the first electrode of the second internal electrode layers along its lead tab leading edges.

A stacked IC package includes a first die including a first power transmission region, an adapter die stacked on the first die, a second die stacked on the adapter die and including a second power transmission region, and a first power transmission path electrically connected between the second power transmission region and the first power transmission region through the adapter die. The first power transmission path includes a first power transmission part penetrating a portion of the adapter die in a vertical direction from the first power transmission region, a second power transmission part including a connected part in a horizontal direction from the first power transmission part in the adapter die, and a third power transmission part connected to the second power transmission region in the vertical direction from the second power transmission part. A voltage conversion circuit is arranged on the first power transmission path.

The utility model belongs to the technical field of integrated circuit packaging, and discloses a multi-mode integrated circuit packaging device which comprises a frame main body, a packaging table and a positioning assembly, the frame main body is used for supporting or installing a structural member, the packaging table is movably arranged on the frame main body and used for bearing an integrated circuit board needing to be packaged, and the positioning assembly is used for positioning the integrated circuit board. The positioning assembly comprises a first positioning piece, a second positioning piece, an elastic piece, an extrusion piece, a sponge pad and a first protection piece, the first positioning piece is connected to the packaging table, the second positioning piece is connected to the packaging table, the elastic piece is arranged on the first positioning piece, the extrusion piece is connected to the elastic piece, and the sponge pad is arranged on the first protection piece. And the extrusion part is movably arranged on the positioning part I. The multi-mode integrated circuit board can be extruded and fixed, so that the integrated circuit board is kept stable when being packaged, the packaging efficiency of the integrated circuit board is ensured, and the reliability of the device is effectively improved.

IC die package routing structures including a bulk layer of a first metal composition on an underlying layer of a second metal composition. The lower layer may be sputter deposited to a thickness sufficient to support plating of the bulk layer upon a first portion of the lower layer. Following the plating process, a second portion of the lower layer may be removed selectively to the bulk layer. Multiple IC die may be attached to the package with the package routing structures responsible for the transmission of high-speed data signals between the multiple IC die. The package may be further assembled to a host component that conveys power to the IC die package.

Package substrate with a core having metallization layers to facilitate signal routing within the core, and related fabrication methods and integrated circuit (IC) packages. The core includes multiple core metallization layers that can be formed separately and coupled to each other to provide signal routing within the core. Metal interconnects in the multiple core metallization layers are coupled to each other through coupling of the core metallization layers to each other in the core to provide signal routing paths through the core. Including separate core metallization layers in the core provides flexibility in patterning location of the metal interconnects therein for routing flexibility within the core. This is opposed to only including singular body, vertical interconnects extending through the entire height of the core. Metal interconnects can also be patterned to extend laterally within a respective core metallization layer to provide lateral signal routing paths within a core metallization layer.

A digital-to-analogue converter (DAC) device includes an input terminal for receiving an input signal that includes m MSBs and n least significant bits LSBs. The device includes a coarse DAC that generates a first voltage from the m MSBs, utilizing resistors and switches coupled to a reference voltage. Coupled with a clock signal of a predetermined frequency, a pulse generator produces pulse signals, including a first pulse signal with a first average voltage and a second pulse signal with a second voltage approximately half of the first average voltage. A fine DAC generates a second voltage using then LSBs to select among the pulse signals. An output filter combines the first and second voltages to produce the final output signal. Integrated circuits containing DAC devices and packages containing the integrated circuits are also described.

To provide an IC assembly, an IC package, and a method of manufacturing the IC assembly that allows a larger number of memory or logic devices to be incorporated on a chip and has increased capacity.SOLUTION: In an IC assembly 600 based on the use of a transistor with a backside contact, the transistor with the backside contact allows backside powering to an IC component such as a transistor in the IC structures. This is an advantage over front side power supply in some implementations. Furthermore, using a glass support structure 450 on the front side of the IC structure with backside powering advantageously reduces parasitic effects in the IC structure compared to using the silicon-based support structure of the front side.SELECTED DRAWING: Figure 6

In an embodiment, a device includes: an integrated circuit die including a die connector; a dielectric layer on the integrated circuit die; an under-bump metallurgy layer having a line portion on the dielectric layer and having a via portion extending through the dielectric layer to contact the die connector; a through via on the line portion of the under-bump metallurgy layer, the through via having a first curved sidewall proximate the die connector, the through via having a second curved sidewall distal the die connector, the first curved sidewall having a longer arc length than the second curved sidewall; and an encapsulant around the through via and the under-bump metallurgy layer.

Deep trench capacitors (DTCs) employing bypass metal trace signal routing supporting signal bypass routing, and related integrated circuit (IC) packages and fabrication methods are disclosed. The DTC includes an outer metallization layer (e.g., a redistribution layer (RDL)) to provide an external interface to the DTC. In exemplary aspects, to make available signal routes that can extend through a DTC, an outer metallization layer of the DTC includes additional metal interconnects. These additional metal interconnects are not coupled the capacitors in the DTC. These additional metal interconnects are interconnected to each other by metal traces (e.g., metal lines) in the outer metallization layer of the DTC to provide bypass signal routes through the DTC. This is opposed to signal paths in a package substrate in which the DTC is coupled or embedded having to be routed around the DTC in the package substrate.