Two-dimensional material/semiconductor hetero-junction tunneling transistor and preparation method thereof

Abstract

The invention discloses a tunneling field effect transistor based on a two-dimensional material/semiconductor hetero-junction and a preparation method thereof. A device forms an interleaved energy band structure in the off state through the energy band design, namely, a tunneling window is inexistent between the two-dimensional material and the semiconductor material, and the ultra-low off-state current can be acquired; the grid voltage can be applied to regulate an energy band alignment way at the two-dimensional material/semiconductor hetero-junction so that the device can form the staggered energy band structure in the on-state, and the effective tunneling barrier height is a negative value; and meanwhile, the current carrier tunnels to a channel region from a source region to realize the direct tunneling, thereby acquiring large on-state current. The device adopts the highly-doped three-dimensional semiconductor material as the source region material, and the three-dimensional semiconductor material and the metal source electrode are unipotential; since the thickness of the two-dimensional material is ultra-thin, the grid voltage can regulate the two-dimensional material and the energy band at the two-dimensional material/semiconductor hetero-junction interface, thereby acquiring an ideal grid control capacity. The tunneling field effect transistor disclosed by the invention is simple in process, and large in compatibility with the traditional semiconductor process.

Description

technical field [0001] The invention belongs to the technical field of nanoelectronics, and in particular relates to a tunneling field effect transistor based on a two-dimensional material / semiconductor heterojunction and a preparation method thereof. Background technique [0002] With the reduction of traditional MOSFET feature size and the improvement of integration, the operating voltage and threshold voltage of the device are gradually reduced. The ensuing short-channel effect is more obvious, and the drain-induced barrier reduction and source-drain band-band tunneling will increase the leakage current and power consumption of the device. In addition, due to the current mechanism of MOSFET thermal emission, its subthreshold slope is limited by the thermal potential, and there is a theoretical limit of 60mV / dec, which cannot be reduced with the reduction of device size, which leads to a further increase in the leakage current of the device and power consumption. The prob...

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Problems solved by technology

However, it is difficult to achieve high doping in two-dimensional materials to form a P-I-N structure in experiments. The physical and chemical doping currently studied has problems such as stability, and it still faces great challenges in experimental preparation.

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