High-power overload 1KPa silicon micropressure sensor chip and manufacturing method

Abstract

Provided are a high-power overload 1KPa silicon micropressure sensor chip and a manufacturing method. The high-power overload 1KPa silicon micropressure sensor chip is characterized by being of a beam-single-island double-sided double-piece micro structure. A U-shaped pressure sensitive resistor is arranged on an I beam in the front side of an upper chip body, an aluminum electrode lead and a lead welding pad are arranged at the periphery of a shallow groove, a residue membrane is connected with a central square support on the back side of the upper chip body at the portion opposite to the shallow groove to form a single hard core-shaped sensitive membrane, a peripheral sealing face and an overpressure stopping groove are arranged on the front side of a lower chip body, a pressure tap through hole is formed in the center of the front side of the lower chip body, the upper chip body and the lower chip body are sealed by rubber and are divided in a scribing mode to form the single micropressure sensor chip. An MEMS technique is utilized to manufacture the pressure sensitive resistor and the I beam structure, a KOH wet method is used for etching and manufacturing the single hard core-shaped sensitive membrane, and the KOH wet method is further used for etching the structure of the lower chip body. The high-power overload 1KPa silicon micropressure sensor chip has the advantages that due to the stress concentration effect of a beam structure, the pressure sensitive resistor can obtain the largest strain; the flexibility for acquiring a micropressure range can reach to 20mV / 1KPa (1mA excitation); the linearity reaches to 0.05%FS; the overpressure stopping groove achieves 50-time overpressure resistance protection in 1KPa pressure measurement; batch production of wafers is achieved.

Description

technical field [0001] The invention relates to a silicon pressure sensor manufacturing technology, in particular to a high overload 1KPa silicon micro-pressure sensor chip and a manufacturing method manufactured by MEMS technology. Background technique [0002] Silicon piezoresistive pressure sensor is a special electronic component that uses silicon piezoresistive effect for pressure measurement. In 1954, C.S.Smith of Bell Laboratories in the United States discovered the piezoresistance effect of semiconductors such as silicon and germanium. The pressure sensor manufactured by using the piezoresistive effect of silicon is to use ion implantation or diffusion technology in the IC process on silicon wafers. A group of diffusion resistors with uniform resistance are formed on the surface, and they are connected into a Wheatstone bridge. When the elastic sensitive diaphragm is strained under the action of stress, the bridge resistance on it changes accordingly, and the sensor...

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Problems solved by technology

However, more technical innovations are needed between these theoretical breakthroughs and the mature technology applied in production. Up to now, there have been no reports of the mass production process of micro-pressure sensors below 1KPa in silicon piezoresistive pressure sensors.

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