A composite thin film pMUTs and a preparation method thereof

A combined and thin-film technology, which is applied to the coupling of optical waveguides, the manufacture of microstructure devices, and microstructure devices composed of deformable elements, etc., to achieve the effects of enhanced mutual coupling, wide ultrasonic receiving bandwidth, and improved ultrasonic transmission power

Active Publication Date: 2019-01-18
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Traditional transducer arrays can generate sound pressures greater than 1 MPa, but require much larger element sizes and operate at lower frequencies

Method used

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  • A composite thin film pMUTs and a preparation method thereof
  • A composite thin film pMUTs and a preparation method thereof
  • A composite thin film pMUTs and a preparation method thereof

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Embodiment Construction

[0053] The present invention is described in detail below in conjunction with accompanying drawing:

[0054] The invention proposes a combined thin-film pMUTs and a preparation method thereof, in order to improve the feasibility, reliability and consistency of unit structure and performance of the pMUTs chip preparation process while increasing the pMUTs transmission power and ultrasonic receiving bandwidth.

[0055] Such as figure 1 , figure 2 with image 3 As shown, a combined thin film pMUTs of the present invention is composed of a multilayer composite thin film 1 and a base structure 2 from top to bottom.

[0056] The multi-layer composite film 1 is composed of a piezoelectric driving layer structure 1-1 and a non-driving layer structure 1-2. The piezoelectric driving layer structure 1-1 is composed of a top electrode 1-1-1, a dielectric layer 1-1-2, and a bottom electrode 1-1-3 from top to bottom in the thickness direction.

[0057] The dielectric layer 1-1-2 is com...

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Abstract

The invention provides a combined thin film pMUTs and a preparation method thereof. The composite membrane structure is composed of a circular membrane and an annular membrane surrounding the circumferential direction of the circular membrane and concentric with the circular membrane. The integral structure comprises an upper electrode, a vibration membrane piezoelectric driving layer, a lower electrode, a vibration membrane structure layer, a membrane support structure and a substrate structure from top to bottom in this order. When used in ultrasonic emission mode, circular thin film and annular thin film are excited with a certain phase difference, resulting in a coupling effect between a circular thin film-fluid medium-annular thin film, which can greatly increase the ultrasonic emission power of the cell. For an ultrasonic receiving mode, both circular and annular thin films vibrate to generate detectable electrical signals, and the wide-band ultrasonic receiving performance is realized by the resonant frequency deviation between circular and annular thin films in fluid medium. The combined thin film structure pMUTs provided by the invention have high emission power and wide bandwidth reception performance.

Description

technical field [0001] The invention relates to MEMS (Micro-electromechanical Systems) ultrasonic transducer technology, in particular to pMUTs (Piezoelectric Micromachined Ultrasonic Transducers) with high electromechanical coupling coefficient and a preparation method thereof. Background technique [0002] Ultrasound transducers have important application value for non-invasive in vivo medical diagnostic imaging. Traditional ultrasonic transducers are manufactured from piezoelectric ceramic materials such as lead zirconate titanate (PZT) or PZT polymer composites, which are sliced ​​or laser cut to form multiple individual components in one-dimensional or two-dimensional arrays. unit. Acoustic lenses, matching layers, backing layers, and electrical interconnects (e.g., flex cables, metal pins / wires), etc. are attached to each transducer unit to form a transducer assembly or probe, which is then A cable connects the probe to the control circuitry, where the cable contains...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B3/00B81B7/02B81C1/00
CPCB81B3/0018B81B7/02B81C1/00349B81C1/00436
Inventor 赵立波徐廷中李支康郭帅帅李杰赵一鹤赵玉龙蒋庄德
Owner XI AN JIAOTONG UNIV
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