The invention provides a double-channel planar gate
silicon carbide LDMOS and a preparation method thereof. The preparation method comprises the following steps: forming a
barrier layer on a
silicon carbide substrate, and performing
etching and
ion implantation to form a first channel region and a first N-type source region; a
barrier layer is formed again,
etching and
ion implantation are carried out, and an isolation region is formed; a
barrier layer is formed again,
etching and
ion implantation are carried out, and a second channel region is formed; a barrier layer is formed again, etching and
ion implantation are carried out, and a P-type well region is formed; a barrier layer is formed again, etching and
ion implantation are carried out, and a second N-type source region is formed; forming a barrier layer again, etching and depositing
metal, and forming a body
diode metal layer; a barrier layer is formed again, and a
gate dielectric layer is formed through etching and deposition; forming a barrier layer again, etching and depositing
metal, and forming a gate metal layer; re-forming a barrier layer, etching, depositing metal, respectively forming a source metal layer and a drain metal layer, and removing the barrier layer to complete preparation; and a double-channel structure design is adopted, so that the on-resistance of the device is reduced.