The present application relates to the technical field of
semiconductor integrated circuits, and particularly relates to a method for realizing steep and high-uniformity
dielectric etching based on high-purity
octafluorocyclobutane and application thereof. The method for
dielectric etching of the present application prepares a patterned
mask on the surface of a
dielectric layer material to be etched through an
electron beam
lithography process; etches the
dielectric layer material covered with the patterned
mask using
plasma formed from an
etching gas to realize a vertical etching groove with a width of 20 nm to 150 nm; and the etching gas comprises high-purity
octafluorocyclobutane gas with a purity of more than 99.99999%. The method for dielectric etching of the present application takes
advantage of the high purity of high-purity
octafluorocyclobutane gas, reduces the damage of etching gases such as
oxygen and high-
fluorocarbon ratio gas to the sidewall etching
protection layer, thereby improving the steepness of the sidewall of nanoscale
silicon oxide via etching, and simultaneously making the etching process relatively stable under different etching sizes.