9 results about "Octafluorocyclobutane" patented technology

To provide a method for producing hexafluoropropene in which the formation of octafluorocyclobutane, a by-product, is suppressed, and a composition obtained by the said production method. [Solution] A method for producing hexafluoropropene, comprising preheating trifluoromethane at a first preheating temperature of 350 to 700°C, then contacting it with tetrafluoroethylene to obtain a product containing hexafluoropropene.

In this method for producing tetrafluoroethylene and octafluorocyclobutane, 1,1,1,2,2-pentafluoroethane is converted into tetrafluoroethylene and octafluorocyclobutane in a gas phase in the presence of silicon oxide. In this conversion, no diluent is used, or 60 vol% or less of a diluent is used relative to the total amount of 1,1,1,2,2-pentafluoroethane and the diluent.

The present invention discloses a gas-insulating medium and its application. The gas-insulating medium includes the following components by mass: 8.4-76.7 parts of trans-1,1,1,4,4,4-hexafluoro-2-butene, and 23.3-91.6 parts of octafluorocyclobutane. The gas-insulating medium of the present invention has a dielectric strength better sulfur hexafluoride, and a low liquefaction temperature, and can be applied in a wider temperature range. In addition, the gas-insulating medium in certain compositions has similar properties with a single component insulating gas. when the gas leaks, the ratio of trans-1,1,1,4,4,4-hexafluoro-2-butene and octafluorocyclobutane remains unchanged, and during the maintenance of electrical equipment, trans-1,1,1,4,4,4-hexafluoro-2-butene and octafluorocyclobutane can be directly supplemented according to a certain ratio, without other operations such as analysis and detection. In addition, the gas-insulating medium of the present invention has good environmental protection performance, the GWP value is low, and the ODP value is 0.

The present application relates to the technical field of semiconductor integrated circuits, and particularly relates to a method for realizing steep and high-uniformity dielectric etching based on high-purity octafluorocyclobutane and application thereof. The method for dielectric etching of the present application prepares a patterned mask on the surface of a dielectric layer material to be etched through an electron beam lithography process; etches the dielectric layer material covered with the patterned mask using plasma formed from an etching gas to realize a vertical etching groove with a width of 20 nm to 150 nm; and the etching gas comprises high-purity octafluorocyclobutane gas with a purity of more than 99.99999%. The method for dielectric etching of the present application takes advantage of the high purity of high-purity octafluorocyclobutane gas, reduces the damage of etching gases such as oxygen and high-fluorocarbon ratio gas to the sidewall etching protection layer, thereby improving the steepness of the sidewall of nanoscale silicon oxide via etching, and simultaneously making the etching process relatively stable under different etching sizes.

The invention relates to a synthesis process of octafluorocyclobutane, which comprises the following steps: taking dichlorohexafluorocyclobutane and hydrogen fluoride as raw materials, adding a lewis acid substance antimony pentachloride or fluorocobaltate as a catalyst to catalyze the raw materials to react, generating octafluorocyclobutane through circular reaction, and then purifying and separating the generated octafluorocyclobutane. The catalyst used in the method is simple and easy to obtain, the temperature in the reaction process is low, energy consumption is low, and the whole technological process is easy to amplify. The problems that in the prior art, a catalyst for reaction is difficult to obtain, energy consumption is high due to high reaction temperature, and the process is complex and not easy to popularize and amplify are solved.

Disclosed is a method for producing hexafluoropropene, with which a product containing hexafluoropropene is obtained by bringing a compound (A) represented by formula (A) into contact with at least one compound (B) that is selected from the group consisting of octafluorocyclobutane, pentafluoroethane, octafluoro-1-butene, and octafluoro-2-butene, and subsequently heating the resultant mixture at a reaction temperature of 780°C or higher in a reactor. In formula (A), X is a hydrogen atom, a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom.　(A): CHF2-X

To provide a method for producing hexafluoropropene in which the formation of octafluorocyclobutane, a by-product, is suppressed, and a composition obtained by the said production method. [Solution] A method for producing hexafluoropropene, comprising preheating trifluoromethane to a first preheating temperature of 450 to 700°C, supplying it to a reactor, and heating the trifluoromethane in the reactor to a reaction temperature of 800°C or higher to obtain a product containing hexafluoropropene.

This disclosure aims to provide a new high-purity octafluorocyclobutane. [Solution] High-purity octafluorocyclobutane.

This invention relates to the field of haloalkanes preparation, specifically to a method and apparatus for simultaneously preparing multiple perfluoroalkanes. The method includes the following steps: (1) thermally cracking polytetrafluoroethylene to form a pyrolysis gas containing fluoroolefins; (2) reacting the pyrolysis gas with fluorine gas to form crude perfluoroalkanes gas; (3) subjecting the crude perfluoroalkanes gas to deep catalytic fluorination under the action of a catalyst to remove fluoroolefins, followed by distillation to obtain hexafluoroethane, octafluoropropane, or hexafluoroethane, octafluoropropane, octafluorocyclobutane, and decafluorobutane, respectively. This invention achieves the preparation of high-purity perfluoroalkanes such as hexafluoroethane, octafluoropropane, octafluorocyclobutane, and decafluorobutane through pyrolysis, fluorine addition, catalytic fluorination, and distillation processes, featuring low cost, high efficiency, and suitability for industrial production.