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6 results about "Octafluorocyclobutane" patented technology

Octafluorocyclobutane, or perfluorocyclobutane, C₄F₈, is an organofluorine compound which enjoys several niche applications. It is related to cyclobutane by replacement of all C–H bonds with C–F bonds. Octafluorocyclobutane is produced by the dimerization of tetrafluoroethylene and the reductive coupling of 1,2-dichloro-1,1,2,2-tetrafluoroethane.

Method for producing hexafluoropropene and composition

To provide a method for producing hexafluoropropene in which the formation of octafluorocyclobutane, a by-product, is suppressed, and a composition obtained by the said production method. [Solution] A method for producing hexafluoropropene, comprising preheating trifluoromethane at a first preheating temperature of 350 to 700°C, then contacting it with tetrafluoroethylene to obtain a product containing hexafluoropropene.
Owner:AGC INC

Method for producing tetrafluoroethylene and octafluorocyclobutane

PCT designated stageWO2026126984A1Preparation by hydrogen halide split-offOrganic chemistry methodsTetrafluoroethylenePolymer science
In this method for producing tetrafluoroethylene and octafluorocyclobutane, 1,1,1,2,2-pentafluoroethane is converted into tetrafluoroethylene and octafluorocyclobutane in a gas phase in the presence of silicon oxide. In this conversion, no diluent is used, or 60 vol% or less of a diluent is used relative to the total amount of 1,1,1,2,2-pentafluoroethane and the diluent.
Owner:AGC INC

Method for realizing steep and high-uniform dielectric etching based on high-purity octafluorocyclobutane and application thereof

PendingCN122161358AEtchingOctafluorocyclobutane
The present application relates to the technical field of semiconductor integrated circuits, and particularly relates to a method for realizing steep and high-uniformity dielectric etching based on high-purity octafluorocyclobutane and application thereof. The method for dielectric etching of the present application prepares a patterned mask on the surface of a dielectric layer material to be etched through an electron beam lithography process; etches the dielectric layer material covered with the patterned mask using plasma formed from an etching gas to realize a vertical etching groove with a width of 20 nm to 150 nm; and the etching gas comprises high-purity octafluorocyclobutane gas with a purity of more than 99.99999%. The method for dielectric etching of the present application takes advantage of the high purity of high-purity octafluorocyclobutane gas, reduces the damage of etching gases such as oxygen and high-fluorocarbon ratio gas to the sidewall etching protection layer, thereby improving the steepness of the sidewall of nanoscale silicon oxide via etching, and simultaneously making the etching process relatively stable under different etching sizes.
Owner:TSINGHUA UNIVERSITY +1

Method for producing hexafluoropropene and composition

To provide a method for producing hexafluoropropene in which the formation of octafluorocyclobutane, a by-product, is suppressed, and a composition obtained by the said production method. [Solution] A method for producing hexafluoropropene, comprising preheating trifluoromethane to a first preheating temperature of 450 to 700°C, supplying it to a reactor, and heating the trifluoromethane in the reactor to a reaction temperature of 800°C or higher to obtain a product containing hexafluoropropene.
Owner:AGC INC

A method and apparatus for simultaneously producing a plurality of perfluoroalkanes

This invention relates to the field of haloalkanes preparation, specifically to a method and apparatus for simultaneously preparing multiple perfluoroalkanes. The method includes the following steps: (1) thermally cracking polytetrafluoroethylene to form a pyrolysis gas containing fluoroolefins; (2) reacting the pyrolysis gas with fluorine gas to form crude perfluoroalkanes gas; (3) subjecting the crude perfluoroalkanes gas to deep catalytic fluorination under the action of a catalyst to remove fluoroolefins, followed by distillation to obtain hexafluoroethane, octafluoropropane, or hexafluoroethane, octafluoropropane, octafluorocyclobutane, and decafluorobutane, respectively. This invention achieves the preparation of high-purity perfluoroalkanes such as hexafluoroethane, octafluoropropane, octafluorocyclobutane, and decafluorobutane through pyrolysis, fluorine addition, catalytic fluorination, and distillation processes, featuring low cost, high efficiency, and suitability for industrial production.
Owner:HENAN UNIV OF SCI & TECH