Back incident-type TiO* UV detector and preparation method thereof

An ultraviolet light, back-incidence technology, applied in sputtering plating, semiconductor devices, ion implantation plating, etc., can solve the problems of harsh equipment and processing conditions, difficult preparation process, high cost, etc., to achieve high sensitivity, The effect of increasing the effective working area and improving the sensitivity

Inactive Publication Date: 2009-10-21
JILIN UNIV
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Problems solved by technology

However, so far, there is no wide-bandgap semiconductor ultraviolet light detector and imaging device that can become a mainstream product in this field.
The main reason is the lack of substrate materials and effective technical means for preparing

Method used

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  • Back incident-type TiO* UV detector and preparation method thereof
  • Back incident-type TiO* UV detector and preparation method thereof
  • Back incident-type TiO* UV detector and preparation method thereof

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Embodiment Construction

[0029] First, the sol-gel technique was used to grow TiO with a thickness of 0.15 μm on the cleaned quartz substrate. 2 nano film. The specific method is to add 10mL tetrabutyl titanate dropwise to 100mL absolute ethanol under stirring at 1000 rpm at room temperature, then add dropwise 10mL glacial acetic acid, and stir for 60 minutes to obtain a uniform and transparent light yellow solution; 10 mL of deionized water was slowly added dropwise to the above solution at a rate of 1 mL / min, and the stirring was continued for 2 hours to obtain a uniform and transparent light yellow sol, which was left to age for 5 hours. The aged sol was spin-coated on the quartz substrate by spin-coating at a spin-coating speed of 2500 rpm; then the film was sintered in a muffle furnace for 2h at a sintering temperature of 600°C to obtain TiO 2 film. The thickness of the film is about 150 nm.

[0030] In the prepared TiO 2 On the thin film, a photoresist finger structure complementary to the m...

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Abstract

The invention belongs to the field of semiconductor optoelectronic detectors, in particular relates to a back incident-type UV detector with quartz as a substrate, nano-TiO2 thin film as a basic UV detection material and Ni as a metal electrode, and a preparation method thereof. The detector takes the quartz as the substrate and adopts an M-S-M (metal-semiconductor-metal) structure. The method for manufacturing the UV detector comprises the steps of adopting a sol-gel technique to grow a TiO2 nanometer thin film on the quartz substrate, evaporating a layer of thin Ni on the prepared TiO2 thin film by a magnetron sputtering method to achieve electrode contact, and adopting lithography technology to obtain Ni inserted-finger shape electrodes. The UV detector in an MSM planar double schottky barrier structure adopts a back incident-type working mode and can greatly improve responsiveness. The detector has good detection performance for the UV rays 250 to 350 nm in wavelength.

Description

technical field [0001] The invention belongs to the field of semiconductor photodetection devices, in particular to a quartz-based substrate and nano-TiO 2 Thin film is the basic ultraviolet light detection material, a back-incidence ultraviolet light detector with Ni as the metal electrode and a preparation method thereof. Background technique [0002] Ultraviolet light detectors have excellent characteristics such as strong anti-interference ability and suitable for harsh environments (such as high-temperature environments), and have important application values ​​in scientific research, military, aerospace, environmental protection, fire prevention and many industrial control fields. [0003] Traditional ultraviolet light detectors are mainly based on silicon-based ultraviolet photocells and photomultiplier tubes. Although they have high sensitivity, they have disadvantages such as the need for additional filters, large volume, easy damage, and the need to work at high vo...

Claims

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Application Information

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IPC IPC(8): H01L31/09H01L31/036H01L31/0224H01L31/18C23C14/34
CPCY02P70/50
Inventor 阮圣平孔祥梓骆俊谕李福民陶晨瞿鹏飞张歆东董玮刘彩霞
Owner JILIN UNIV
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