The invention discloses a gas sensor based on a
field effect transistor structure and a preparation method of the gas sensor based on the
field effect transistor structure. The gas sensor based on the
field effect transistor structure comprises substrate
layers, a gate insulating layer, an
active layer, a source
electrode and a drain
electrode, wherein the gate insulating layer is connected with the
active layer, the gate insulating layer and the
active layer are arranged between the substrate
layers, a gate
electrode, the source electrode and the drain electrode are arranged on the substrate
layers, the gate insulating layer is made of insulating materials with microstructures, and the insulating materials with the microstructures are oxides or insulating polymers. According to the gas sensor based on the
field effect transistor structure and the preparation method of the gas sensor based on the
field effect transistor structure, due to the fact that the microstructures are arranged on the insulating materials to prepare the gate insulating layer, when gas is fed into the gate insulating layer with the microstructures, the
capacitance of the gate insulating layer changes, changes of performance of a
field effect transistor are caused, and the purpose of gas detection is achieved. The gas sensor based on the field effect transistor structure is wide in range of detection, and detection of various gases can be achieved. The obtained gas sensor is small in size, the size and cost of a detection device can be reduced, and the gas sensor based on the field effect transistor structure and the preparation method of the gas sensor based on the field effect transistor structure have good application prospect.