Gas sensor based on field effect transistor structure and preparation method thereof
A field-effect transistor and gas sensor technology, which is applied in the field of field-effect transistor-based gas sensor and its preparation, can solve the problems of complex devices, high sensor cost, and long operation time, and achieve reduced volume and cost, and detection range The effect of wide and good application prospects
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[0041] Example 1
[0042] The gas sensor obtained in this embodiment is based on the top grid-bottom contact type gas sensor, and the preparation method is as follows:
[0043] (1) Prepare a layer of gold material with a thickness of 100nm and mirror-symmetric source electrode 2 and drain electrode 3 on the base layer A1 by thermal evaporation. The width of the source and drain electrodes are both 200μm and the length is 200μm, between the two electrodes The distance is 20μm;
[0044] (2) On the base layer A1, the source electrode 2 and the drain electrode 3, copper phthalocyanine with a thickness of 80 nm using thermal evaporation is used as the active layer 4;
[0045] (3) Prepare a 100nm thick gate electrode 6 on the base layer B7 by sputtering, the gate electrode is made of Si; wherein the base layer is made by using PEI as the base, followed by acetone, ethanol, and pure Ultrasonic water for 40 minutes, then use N 2 Blow dry and place in a vacuum oven at 100°C for 10 minutes to ...
Example Embodiment
[0054] Example 2
[0055] The gas sensor manufactured in this embodiment is based on the top grid-bottom contact type gas sensor, and the preparation method is as follows:
[0056] (1) Prepare a layer of 100nm mirror-symmetrical gold source electrode 2 and drain electrode 3 on the base layer A1 by sputtering. The width of the source and drain electrodes are both 200μm and the length is 200μm. The two electrodes The distance between them is 20μm;
[0057] (2) Transfer the single crystal of naphthacene to the layer A1, the source electrode 2 and the drain electrode 3 as the active layer 4 by using the transfer method;
[0058] (3) Prepare a layer of 60nm thick gate electrode 6 on the base layer B7 by sputtering, the gate electrode is made of gold; among them, the base layer is made of silicon as the base, followed by acetone, ethanol, and pure Ultrasonic water for 40 minutes, then use N 2 Blow dry and place in a vacuum oven at 100°C for 10 minutes to obtain a base layer;
[0059] (4) On...
Example Embodiment
[0063] Example 3
[0064] The gas sensor manufactured in this embodiment is based on the bottom grid-top contact type, and the preparation method is as follows:
[0065] (1) Using inkjet printing on the base layer A1, prepare a mirror-symmetric source electrode 2 and drain electrode 3 made of silver with a thickness of 300 nm; the width of the source and drain electrodes are both 200 μm and the length is 200 μm. The distance between the two electrodes is 50μm;
[0066] (2) On the source electrode 2 and the drain electrode 3, a layer of vanadyl phthalocyanine with a thickness of 80 nm is prepared as the active layer 4 by means of thermal evaporation;
[0067] (3) Prepare a layer of 60nm thick gate electrode 6 on the base layer B7 by sputtering, the gate electrode is made of gold; among them, the base layer is made of silicon as the base, followed by acetone, ethanol, and pure Ultrasonic water for 40 minutes, then use N 2 Blow dry and place in a vacuum oven at 100°C for 10 minutes to o...
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