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Gas sensor based on field effect transistor structure and preparation method thereof

A field-effect transistor and gas sensor technology, which is applied in the field of field-effect transistor-based gas sensor and its preparation, can solve the problems of complex devices, high sensor cost, and long operation time, and achieve reduced volume and cost, and detection range The effect of wide and good application prospects

Active Publication Date: 2014-01-08
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, electrical gas sensors have poor gas selectivity and short effective time; sensors based on infrared technology have high cost, complex devices, long operation time, and complicated process, while electrochemical gas sensors are susceptible to external interference and have a relatively short life.
Therefore, it is difficult for gas sensors on the market to meet the needs of low cost, high sensitivity, fast and timely detection, and simple portability.

Method used

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  • Gas sensor based on field effect transistor structure and preparation method thereof
  • Gas sensor based on field effect transistor structure and preparation method thereof
  • Gas sensor based on field effect transistor structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] The gas sensor obtained in this embodiment is based on the top grid-bottom contact type, and its preparation method is as follows:

[0043] (1) On the base layer A1, use thermal evaporation to prepare a layer of gold material with a thickness of 100nm and a mirror-symmetrical source electrode 2 and drain electrode 3. The width of the source and drain electrodes is 200 μm, and the length is 200 μm. The distance is 20μm;

[0044] (2) On the base layer A1, the source electrode 2 and the drain electrode 3, phthalocyanine copper with a thickness of 80 nm is evaporated by thermal evaporation as the active layer 4;

[0045] (3) Prepare a layer of 100nm-thick gate electrode 6 on the base layer B7 by sputtering. The water was sonicated for 40 minutes, followed by N 2 Blow dry, place in a vacuum oven at 100°C for 10 minutes to obtain the base layer;

[0046] (4) On the base layer B7 and the gate electrode 6, prepare a PMMA layer by spin coating;

[0047] (5) On the surface of...

Embodiment 2

[0055] The gas sensor prepared in this example is based on the top grid-bottom contact type, and its preparation method is as follows:

[0056] (1) On the base layer A1, prepare a mirror-symmetric gold source electrode 2 and drain electrode 3 with a thickness of 100 nm by sputtering. The source and drain electrodes have a width of 200 μm and a length of 200 μm. The distance between them is 20 μm;

[0057] (2) transfer the single crystal of tetracene to the layer A1, the source electrode 2 and the drain electrode 3 as the active layer 4 by using the transfer method;

[0058] (3) Prepare a 60nm-thick gate electrode 6 on the base layer B7 by sputtering, and the gate electrode is made of gold; wherein, the base layer is prepared by using silicon as the base, followed by acetone, ethanol, pure The water was sonicated for 40 minutes, followed by N 2 Blow dry, place in a vacuum oven at 100°C for 10 minutes to obtain the base layer;

[0059] (4) On the base layer B7 and the gate el...

Embodiment 3

[0064] The gas sensor prepared in this example is based on the bottom gate-top contact type, and its preparation method is as follows:

[0065] (1) Prepare a mirror-symmetrical source electrode 2 and drain electrode 3 made of silver with a thickness of 300 nm on the base layer A1 by inkjet printing; the source and drain electrodes have a width of 200 μm and a length of 200 μm, The distance between the two electrodes is 50 μm;

[0066] (2) On the source electrode 2 and the drain electrode 3, a layer of vanadyl phthalocyanine with a thickness of 80 nanometers is prepared as the active layer 4 by thermal evaporation;

[0067] (3) Prepare a 60nm-thick gate electrode 6 on the base layer B7 by sputtering, and the gate electrode is made of gold; wherein, the base layer is prepared by using silicon as the base, followed by acetone, ethanol, pure The water was sonicated for 40 minutes, followed by N 2 Blow dry, place in a vacuum oven at 100°C for 10 minutes to obtain the base layer; ...

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Abstract

The invention discloses a gas sensor based on a field effect transistor structure and a preparation method of the gas sensor based on the field effect transistor structure. The gas sensor based on the field effect transistor structure comprises substrate layers, a gate insulating layer, an active layer, a source electrode and a drain electrode, wherein the gate insulating layer is connected with the active layer, the gate insulating layer and the active layer are arranged between the substrate layers, a gate electrode, the source electrode and the drain electrode are arranged on the substrate layers, the gate insulating layer is made of insulating materials with microstructures, and the insulating materials with the microstructures are oxides or insulating polymers. According to the gas sensor based on the field effect transistor structure and the preparation method of the gas sensor based on the field effect transistor structure, due to the fact that the microstructures are arranged on the insulating materials to prepare the gate insulating layer, when gas is fed into the gate insulating layer with the microstructures, the capacitance of the gate insulating layer changes, changes of performance of a field effect transistor are caused, and the purpose of gas detection is achieved. The gas sensor based on the field effect transistor structure is wide in range of detection, and detection of various gases can be achieved. The obtained gas sensor is small in size, the size and cost of a detection device can be reduced, and the gas sensor based on the field effect transistor structure and the preparation method of the gas sensor based on the field effect transistor structure have good application prospect.

Description

【Technical field】 [0001] The invention belongs to the technical field of sensor preparation, in particular to a gas sensor based on a field effect transistor structure and a preparation method thereof. The gas sensor can realize gas detection with high sensitivity, low cost and wide range by changing the performance of field effect transistor devices. 【Background technique】 [0002] Organic field effect transistor (OFET) is one of the important research contents of organic semiconductors. The main advantages of organic field effect transistors are: wide source of materials and multiple film forming technologies (such as throwing film, drop film, LB film, molecular self-assembly, electrical Chemical deposition or printing and other film-forming techniques), low-temperature processing, easy modulation of electrical properties (by introducing side chains or substitutions), compatible with flexible substrates, small device size (up to molecular scale), high integration, suitable...

Claims

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Application Information

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IPC IPC(8): H01L51/05H01L51/10H01L51/40G01N27/414
CPCH10K10/468H10K10/82
Inventor 王凤霞潘革波
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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