LED epitaxial wafer electroluminescent nondestructive detection method

Abstract

The invented method for testing the pitaxial wafer of the light emitting diode (LED) belongs to the area of the test instrument. The positive and negative electrodes are set upon the surface of the epitaxial wafer of LED. The high-voltage constant current source is connected to the positive and negative electrode, making the p type layer and the n type layer in the epitaxial wafer of LED form thebackward diode. The breakdown of the backward diode caused by the high-voltage makes the entire circuit turn on so as to trigger off the luminescence of the luminous layer of the epitaxial wafer of LED. Thus, the target of the test is reached. The method is direct, safe and convenient. Moreover, the electric parameters such as the forward direction on-state voltage, the reverse-leakage current can be obtained if it is photo fluorescence.

Description

technical field [0001] The invention relates to a detection method of a light-emitting diode (LED) epitaxial wafer, belonging to the field of detection instruments. Background technique [0002] After the incandescent lamp was invented more than 100 years ago, the cheap and efficient white light source made of red, green and blue LEDs will replace the light source invented by Edison sooner or later. Due to the very high economic benefits of LED, its development prospect is very broad and it has a huge market capacity. Since lighting consumption accounts for 20% of the total power consumption, vigorously developing LED technology will be an effective way to save energy. LED will definitely be the lighting equipment of the future. [0003] The main work for current LEDs is to reduce production costs, increase efficiency and expand the range of useful colors. In terms of production, due to the fierce competition in the LED market, the production process must attach great imp...

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