Surface acoustic wave device and electronic apparatus

Abstract

A surface acoustic wave device includes: a quartz substrate; and at least a single-type IDT electrode provided on a surface of the quartz substrate for exciting a Rayleigh surface acoustic wave in the upper limit mode of the surface acoustic wave stop band with the following relationships satisfied;φ=0, 110°≦θ≦140°, and 38°≦|ψ|≦44°, when the quartz substrate cut angles and the surface acoustic wave propagation direction are represented by Euler angles (φ, θ, ψ), and wherein the electrode thickness relative to wavelength set such thatH / λ≧0.1796η3−0.4303η2+0.2071η+0.0682, with the thickness of the IDT electrode defined as H, the width of an electrode IDT finger defined as d, the pitch between the electrode fingers of the IDT electrode as P, the wavelength of the surface acoustic wave as λ, and where η=d / P.

Description

BACKGROUND[0001]1. Technical Field[0002]The present invention relates to a surface acoustic wave device using the upper limit mode of the stop band of Rayleigh surface acoustic waves.[0003]2. Related Art[0004]Surface acoustic wave devices such as SAW resonators or SAW filters, features higher frequencies, smaller sizes, and mass production capability, having widely been used in the field of communications. In particular, surface acoustic wave devices using a quartz substrate such as ST-cut quartz substrates shows high temperature stability featured by a quartz crystal so as to attain higher accuracy. As the use of portable communications apparatuses spread in recent years, those surface acoustic wave devices are further required to achieve higher frequencies and smaller sizes as well as higher temperature stability and thereby higher accuracy.[0005]It is known that two frequency solutions called “stop band” can be calculated with respect to a Rayleigh surface acoustic wave excited b...

AI Technical Summary

Benefits of technology

[0010]An advantage of the invention is to provide a surface acoustic wave device that shows an excellent frequency temperature characteristic and can readily achieve higher frequencies by using a single-type IDT electrode and utilizing the upper limit mode of the stop band as the oscillation frequency.

[0011]According to one embodiment of the subject invention, a surface acoustic wave device includes: a quartz substrate; and at least a single-type IDT electrode provided on a surface of the quartz substrate for exciting a Rayleigh surface acoustic wave in an upper limit mode of a stop band of the surface acoustic wave when the following relationships are satisfied;

[0012]φ=0°, 110°≦θ≦140°, and 38°≦|ψ|≦44°, with the quartz substrate having cut angles and a surface acoustic wave propagation direction represented by Euler angles (φ, θ, ψ).

[0013]In addition the electrode thickness to wavelength should be set such that the relationship H / λ≧0.1796η3−0.4303η2+0.2071η+0.0682 is satisfied wherein the thickness of the IDT electrode is defined as H, the width of an electrode finger of the IDT electrode is defined as d, the pitch between the electrode fingers of the IDT electrode is defined as P, the wavelength of the surface acoustic wave is defined as λ, and where η=d / P.

[0014]The cut angles of the quartz substrate allow the surface acoustic wave propagation direction to be moved to a position distant from a symmetric position with respect to the quartz crystal in the quartz substrate. This makes it possible to utilize the upper limit mode of the stop band as the oscillation frequency of surface acoustic wave. Setting H / λ as described above allows the single-type IDT electrode to excite surface acoustic waves more strongly in the upper limit mode than in the lower limit mode. According to this configuration, it is possible to provide a surface acoustic wave device that has a smaller frequency variation with the temperature than when using an in-plane rotation ST-cut quartz substrate and can readily achieve higher frequencies for its use of a single-type IDT electrode.

[0015]The surface acoustic wave device according to one aspect of the invention preferably further includes a reflector on both sides of the IDT electrode, wherein when the pitch between electrode fingers of the IDT electrode is defined as P and the pitch between electrode fingers of the reflector as Pr, the variables P and Pr have a relation of P / Pr>1.

Problems solved by technology

However, a single-type IDT electrode on the ST-cut quartz substrate can excite no surface acoustic wave in the upper limit mode.

This places a burden on the manufacturing process, making it difficult for a surface acoustic wave device using a reflection / inversion type IDT electrode to achieve higher frequencies.

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