High frequency surface acoustic wave device with AlN (aluminum nitride) film as interlayer and preparation method thereof

A high-frequency surface acoustic wave and intermediate layer technology, applied in the direction of plating, coating, electrical components, etc. of superimposed layers

Inactive Publication Date: 2012-04-11
TIANJIN UNIVERSITY OF TECHNOLOGY
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Problems solved by technology

This provides a theoretical basis for the application of AlN films with a-axis preferred orientation in

Method used

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  • High frequency surface acoustic wave device with AlN (aluminum nitride) film as interlayer and preparation method thereof
  • High frequency surface acoustic wave device with AlN (aluminum nitride) film as interlayer and preparation method thereof
  • High frequency surface acoustic wave device with AlN (aluminum nitride) film as interlayer and preparation method thereof

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Embodiment

[0032] The first step, the nano-diamond film substrate prepared by CVD method:

[0033] The technological parameter of adopting CVD method to prepare nano-diamond bottom layer is: carry out chemical vapor deposition in argon, hydrogen and methane mixed gas, the volume percent of argon, hydrogen and methane is 75%: 20%: 5%, mixing The gas flow is 500 sccm, the microwave power in the deposition chamber is 4500W, the pressure is 75Pa, the substrate temperature is 750°C, and the deposition time is 2 hours.

[0034] In the second step, in the high vacuum sputtering chamber, the Al target is used as the target material, and high vacuum magnetron sputtering is performed on the surface of the above-mentioned CVD diamond film terminated with hydrogen and mirror polished, and a layer of a-axis preferred orientation AlN is deposited and formed. Thin film, film thickness 0.30μm:

[0035]The reaction was carried out in a mixed gas of nitrogen and argon, the volume ratio of nitrogen and ar...

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Abstract

The invention provides a high frequency surface acoustic wave device with an AlN (aluminum nitride) film as an interlayer. The device is characterized in that an a-axis preferred orientation AlN film is taken as a CVD (chemical vapor deposition) diamond substrate and a c-axis preferred orientation ZnO film is taken as an interlayer, the substrate and the interlayer are formed into an IDT(interdigital transducer)/ZnO/a-axis preferred orientation AlN/diamond multi-layered membrane structure and the structure is stacked with the IDT in sequence to form the high frequency surface acoustic wave device; the preparation method comprises the following steps of preparing an a-axis preferred oritention AlN film interlayer, and preparing a c-axis preferred oritentation ZnO film on the a-axis preferred orientation AlN film interlayer. The device and the preparation method provided by the invention have the following advantages that the sound velocity frequency dispersion caused by a large sound velocity gap between nanodiamond and ZnO can be solved, the application demand of the surface acoustic wave with high frequency above 4.8 GHz can be met, and moreover, the process is simple and easy to implement, and is beneficial for large-scale population and application.

Description

technical field [0001] The invention relates to the technical field of surface acoustic wave devices, in particular to a high-frequency surface acoustic wave device with an AlN thin film as an intermediate layer and a preparation method thereof. Background technique [0002] In recent years, the rapid development of mobile communication has made radio communication frequency band a limited and precious natural resource. For mobile communication systems, the frequency band below 1GHz has been fully occupied (the first generation digital system); the frequency of the second generation digital system is from 900MHz to 1.9GHz; in the third generation digital system, the global roaming frequency range is 1.8~2.2GHz, the satellite positioning system (GPS) frequency is 1.575GHz, and the application frequency range of low earth orbit new satellite communication (LEO) is 1.6GHz~2.5GHz. Therefore, the application frequency of the current mobile communication system is getting higher a...

Claims

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Application Information

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IPC IPC(8): H03H3/08H03H9/25C23C28/04C23C16/27C23C14/08C23C14/06
Inventor 陈希明郭燕薛玉明孙连婕阴聚乾张倩
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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