IDT/h-BN/c-BN/diamond multi-layer film structure surface acoustic wave device and its manufacture method

A surface acoustic wave device and multi-layer film technology, which is applied in the direction of electrical components, impedance networks, etc., can solve problems such as the inability to perform energy conversion between electromagnetic waves and surface acoustic waves

Inactive Publication Date: 2007-10-24
TIANJIN UNIVERSITY OF TECHNOLOGY
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AI Technical Summary

Problems solved by technology

[0005] However, diamond itself is not a piezoelectric material and cannot perform energy conversion between electromagnetic waves and surface acoustic w

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0018] The preparation method of the present invention is divided into the following steps:

[0019] 1. Using the microwave plasma CVD method, on the "mirror" silicon, the deposition parameters are controlled by a microcomputer program, and the nano-diamond film is continuously deposited step by step. The specific steps are as follows:

[0020] ①Using ZL 02141713X "Seedless crystal and unbiased diamond film deposition method", a very thin diamond-like carbon film transition layer is deposited on the surface of the high-resistance "mirror" silicon substrate; the mixed gas ratio is 86% (Ar): 10%(H 2 ): 4% (CH 4 ); The microwave power is 5000W, the mixed gas flow is 600sccm, and the substrate temperature is 700℃. Deposit for 10 minutes (the film thickness is about 0.4~0.5μm);

[0021] ②High-density nucleation on the surface of the diamond-like carbon film: The ratio of the mixed gas is controlled and adjusted by a computer program, and the ratio of the mixed gas slowly becomes 50% (A...

Example Embodiment

[0033] Example 1:

[0034] 1. First prepare the nano-diamond film whose surface is terminated with hydrogen:

[0035] Using the microwave plasma CVD method, on the "mirror" silicon, the deposition parameters are controlled by a microcomputer program, and the nano-diamond film is continuously deposited step by step. The specific steps are as follows:

[0036] ①Using ZL 02141713X "Seedless crystal and unbiased diamond film deposition method", a very thin transition layer of diamond-like film is deposited on the surface of the high resistance "mirror" silicon substrate; the mixed gas ratio is 86% (Ar): 10%(H 2 ): 4% (CH 4 ); microwave power 5000W, mixed gas flow 600sccm, substrate temperature 700℃. Deposition for 10 minutes (the film thickness is about 0.4~0.5μm);

[0037] ②High-density nucleation on the surface of the diamond-like carbon film: The ratio of the mixed gas is controlled and adjusted by a computer program, and the ratio of the mixed gas slowly becomes 50% (Ar): 47% (H 2...

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PUM

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Abstract

The disclosed IDT/h-BN/c-BN/ diamond multilayer membrane structure SAW device comprises: from bottom to top, a nano-diamond membrane base prepared on mirror silicon, a nano c-BN membrane intermediate layer, a high-C-axis preferred orientated nano h-BN membrane, and an IDT. This invention can be used on condition of 2. 5GHz, high electromechanical coupling factor, smaller loss at 8w propagation, and low frequency temperature coefficient.

Description

【Technical field】 [0001] The invention relates to a surface acoustic wave device, in particular to an IDT / h-BN / c-BN / diamond multilayer film structural acoustic Surface wave device and its fabrication method. 【Background technique】 [0002] In recent years, the rapid development of mobile communication has made the radio communication frequency band a limited and precious natural resource. The mobile communication system, in the third generation digital system, the global roaming frequency range is 1.8-2.2GHz, and the satellite positioning system (GPS) 1.575 GHz; low-earth orbit new satellite communication (LEO) application frequency from 1.6GHz to 2.5GHz, urgently needs high-frequency surface acoustic wave (SAW) filter. High-frequency SAW filters are also used in intermediate frequency (IF) filtering in high-frequency systems (eg, high bit-rate wireless LANs). In addition, high-speed digital optical fiber transmission technology develops rapidly, and the capacity of optica...

Claims

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Application Information

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IPC IPC(8): H03H9/145H03H3/08
Inventor 杨保和熊瑛薛玉明陈希明吴晓国
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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