IDT/h-BN/c-BN/diamond multi-layer film structure surface acoustic wave device and its manufacture method
A surface acoustic wave device and multi-layer film technology, which is applied in the direction of electrical components, impedance networks, etc., can solve problems such as the inability to perform energy conversion between electromagnetic waves and surface acoustic waves
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[0018] Preparation method of the present invention divides following steps:
[0019] 1. Using the microwave plasma CVD method, on the "mirror surface" silicon, use the microcomputer program to control the deposition parameters, and continuously deposit the nano-diamond film step by step. The specific steps are as follows:
[0020] ① Using ZL 02141713X "seedless and unbiased diamond film deposition method", first deposit a very thin diamond-like film transition layer on the surface of the high-resistance "mirror" silicon substrate; the gas mixture ratio is 86% (Ar): 10% (H 2 ): 4% (CH 4 ); microwave power 5000W, gas mixture flow rate 600sccm, substrate temperature 700°C. Deposit for 10 minutes (film thickness is about 0.4-0.5 μm);
[0021] ②High-density nucleation on the surface of diamond-like carbon film: the mixture gas ratio is controlled and adjusted by a microcomputer program, and the mixture gas ratio slowly becomes 50% (Ar): 47% (H 2 ): 3% (CH 4 ), and slowly chang...
example 1
[0034] 1. First prepare the nano-diamond film whose surface is terminated by hydrogen:
[0035] Using the microwave plasma CVD method, on the "mirror surface" silicon, using the microcomputer program to control the deposition parameters, the nano-diamond film is deposited step by step and continuously. The specific steps are as follows:
[0036] ① Using ZL 02141713X "seedless and unbiased diamond film deposition method", first deposit a very thin diamond-like film transition layer on the surface of the high-resistance "mirror" silicon substrate; the gas mixture ratio is 86% (Ar): 10% (H 2 ): 4% (CH 4 ); microwave power 5000W, gas mixture flow rate 600sccm, substrate temperature 700°C. Deposit for 10 minutes (film thickness is about 0.4-0.5 μm);
[0037] ②High-density nucleation on the surface of diamond-like carbon film: the mixture gas ratio is controlled and adjusted by a microcomputer program, and the mixture gas ratio slowly becomes 50% (Ar): 47% (H 2 ): 3% (CH 4 ), a...
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