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Method for preparing graphene

A graphene and carbon source technology, applied in the field of graphene preparation on non-metallic materials, can solve the problems of difficult and weak adhesion, and achieve the effect of simple preparation process and convenient liquid phase processing

Inactive Publication Date: 2011-08-24
TANWENG BEIJING TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the tedious transfer process is prone to the introduction of polymer impurities and metal impurities, the formation of wrinkles, and weak adhesion between graphene and transfer substrates.
Although the direct assembly of graphene on the silica substrate is realized with the help of a thinner metal catalyst, which simplifies the preparation process, the above-mentioned transfer shortcomings are still difficult to be completely overcome.

Method used

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  • Method for preparing graphene

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Embodiment 1, prepare graphene sheet on quartz substrate

[0036] 1) Clean the quartz growth substrate:

[0037] The quartz plate was ultrasonically cleaned with detergent, water, deionized water, acetone and ethanol for 5 minutes each, and then dried;

[0038] 2) Put the processed quartz sheet in step 1) into the quartz tube of the tube furnace, evacuate to reduce the air pressure in the tube to below 10 pascals, feed hydrogen to normal pressure, and repeatedly remove the air in the tube three times, and control the hydrogen flow rate to 50 sccm , heating up, when the temperature rises to 1100°C, continue to keep at constant temperature for 10 minutes;

[0039] 3) Growing graphene:

[0040] Maintain the temperature in the tube furnace quartz tube in step 2) to be 1100° C., the methane and the hydrogen of 50 sccm that feed flow are 12.5 sccm, at 1.01 × 10 5 After growing under Pascal pressure for 1 hour, turn off the methane as the carbon source, and cool down to roo...

Embodiment 2

[0042] Embodiment 2, prepare graphene film on quartz substrate

[0043] According to the same method as in Example 1, only the growth time in step 2) was extended to 5 hours.

[0044] figure 2 It is a scanning electron microscope photo of a graphene film. The scanning electron microscope is a field emission scanning electron microscope S-4800. The accelerating voltage is 1kV. The area indicated by the green arrow is a single layer, the area indicated by the red arrow is a double layer, and the area indicated by the blue arrow It is a small number of layers or folds, and the area indicated by the yellow arrow is the base. Among them, the area of ​​the single layer area is 60%, and the thickness is 0.95 nanometers, and the area of ​​the double layer area is 15%. ) is 25% of the area.

[0045] image 3 It is the atomic force microscope photo of the graphene film, where a is the height map, b is the height profile along the straight line in the picture a, and c is the phase di...

Embodiment 3

[0049] Embodiment 3, prepare graphene sheet on silicon wafer with silicon dioxide coating

[0050] According to the same method as in Example 1, only the quartz wafer used in steps 1) and 2) is replaced with a silicon wafer with a thickness of 300 nanometers of silicon dioxide coating as the growth substrate, and the growth time is replaced by 30 minutes, 1 hour, 1.5 hours and 2 hours, the graphene sheets provided by the present invention were obtained.

[0051] Figure 8 It is a scanning electron microscope photo of a graphene sheet grown on a silicon wafer with a silicon dioxide coating for 1.5 hours. The scanning electron microscope is a field emission scanning electron microscope S-4300, and the accelerating voltage is 15kV. It can be seen from the figure that the graphene sheet It is a circular structure with a diameter of 200-300 nanometers, wherein more than 96% of the graphene sheet is a single layer, and the rest are double layers.

[0052] Figure 9 It is an atomi...

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Abstract

The invention discloses a method for preparing graphene. The method comprises the following steps of: 1) raising the temperature of a substrate in a non-oxidizing atmosphere to be between 800 and 1,200 DEG C and keeping the temperature for 10 to 20 minutes; and 2) keeping the temperature in step 1) unchanged, aerating a carbon source and hydrogen into a reaction system in step 1), reacting on thesubstrate treated in step 1) by a chemical vapor deposition method, closing the carbon source after the reaction is finished, and cooling to room temperature in the non-oxidizing atmosphere to obtainthe graphene. The graphene can be discrete nano sheets, and can also be continuous graphene films. A quartz substrate on which the graphene grows can be directly used for high-performance transparentconductive electrodes. A silicon substrate, on which the graphene grows, with a silicon dioxide layer can be directly used for assembly of electronic devices without transfer, is simple in a process,and is compatible with the conventional semiconductor industry.

Description

technical field [0001] The invention relates to a method for preparing graphene, in particular to a method for preparing graphene on non-metallic materials. Background technique [0002] As the structural basis of zero-dimensional fullerenes, one-dimensional carbon nanotubes and three-dimensional graphite crystals, graphene materials have excellent mechanical, electrical, optical and chemical properties, and are widely used in microelectronics, composite materials, transparent conductive films and energy storage, etc. The field has broad application prospects. Since the discovery of graphene by the team of Kostya Novosev and Andre Geim at the University of Manchester in 2004, many physical and chemical methods have been used to prepare high-quality graphene materials. These methods include mechanical exfoliation, silicon carbide epitaxial growth, graphite oxide reduction, ultrasonic-assisted dispersion, solvothermal, chemical vapor deposition, and organic synthesis. (K.S. ...

Claims

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Application Information

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IPC IPC(8): C01B31/04
Inventor 刘云圻陈建毅黄丽平武斌薛运周耿德超于贵
Owner TANWENG BEIJING TECH CO LTD
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