There is provided a method of fabricating a vertical
light emitting diode. The method comprises the steps of: growing a low doped first conductive
semiconductor layer on a sacrificial substrate; forming an aluminum layer on the low doped first conductive
semiconductor layer; forming an AAO layer having a large number of holes formed therein by performing
anodizing treatment of the aluminum layer;
etching and patterning the low doped first conductive
semiconductor layer using the aluminum layer with a large number of the holes as a
shadow mask to
expose a portion of the low doped first conductive semiconductor layer, thereby forming a large number of grooves; removing the aluminum layer remaining on the low doped first conductive semiconductor layer; sequentially forming a high doped first conductive semiconductor layer, an
active layer and a second conductive semiconductor layer on the low doped first conductive semiconductor layer with a large number of the grooves; forming a
metal reflective layer and a conductive substrate on the second conductive semiconductor layer; separating the sacrificial substrate; and forming an
electrode pad on the other surface of the low doped first conductive semiconductor layer, the
electrode pad being filled in a large number of the grooves to be in
ohmic contact with the high doped first conductive semiconductor layer