A kind of indium sulfide-based impurity band semiconductor and its preparation method and application

A semiconductor and impurity technology, applied in the field of new semiconductor materials, can solve the problems of weak conductivity of indium trisulfide semiconductor, limited photoelectric conversion efficiency of solar cells, ineffective use of photons, etc., and achieves enhanced optical absorption performance, simple preparation method, Increase the effect of the jump path
CN110422874BActive Publication Date: 2021-12-28SHANGHAI DIANJI UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHANGHAI DIANJI UNIV
Publication Date
2021-12-28

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Abstract

The present invention relates to a kind of structure In 2 S 3 impurity band semiconductor approach to In 2 S 3 The semiconductor is the parent compound, and the Ge element is used to dope In 2 S 3 In bit of semiconductor, get In 2 S 3 Impurity band semiconductor. Compared with the prior art, the present invention adopts In 2 S 3 As the base material, In is doped with the group IV element Ge 2 S 3 The In site, thus introducing an impurity band in the parent bandgap, increases the transition path of electrons, broadens the absorption spectrum, and enhances the optical absorption of raw materials, so that it can be directly used as solar cell absorption materials, and has a great impact on the development of solar energy. Has practical significance; theoretically calculated In 2 S 3 Doping In with Ge 2 S 3 The absorption spectrum shows that the intrinsic semiconductor has only one absorption edge, and after doping Ge, a new absorption edge appears, and the absorption curve starts to be significantly enhanced in the energy region lower than the band gap; Ge-doped In in the present invention 2 S 3 The preparation method of the semiconductor material is simple, and industrialized mass production can be realized.
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Description

technical field

[0001] The invention relates to the field of new semiconductor materials, in particular to an indium sulfide-based impurity band semiconductor and its preparation method and application. Background technique

[0002] There are many ways to utilize solar energy, including photothermal conversion, photoelectric conversion, and photochemical conversion. Among the many solar energy utilization methods, the most attractive one is the solar cell based on the photoelectric effect. Solar cells use semiconductor materials as the medium to realize the conversion of light energy and electrical energy. From the date of its birth to the present, solar cells have achieved vigorous development, and solar cells with various new structures and new materials emerge in an endless stream. The semiconductors of traditional silicon-based solar cells and thin-film solar cells can only absorb photons near the band gap, which limits the efficiency of solar cells and severely restri...

Claims

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