A kind of indium sulfide-based impurity band semiconductor and its preparation method and application

Abstract

The present invention relates to a kind of structure In 2 S 3 impurity band semiconductor approach to In 2 S 3 The semiconductor is the parent compound, and the Ge element is used to dope In 2 S 3 In bit of semiconductor, get In 2 S 3 Impurity band semiconductor. Compared with the prior art, the present invention adopts In 2 S 3 As the base material, In is doped with the group IV element Ge 2 S 3 The In site, thus introducing an impurity band in the parent bandgap, increases the transition path of electrons, broadens the absorption spectrum, and enhances the optical absorption of raw materials, so that it can be directly used as solar cell absorption materials, and has a great impact on the development of solar energy. Has practical significance; theoretically calculated In 2 S 3 Doping In with Ge 2 S 3 The absorption spectrum shows that the intrinsic semiconductor has only one absorption edge, and after doping Ge, a new absorption edge appears, and the absorption curve starts to be significantly enhanced in the energy region lower than the band gap; Ge-doped In in the present invention 2 S 3 The preparation method of the semiconductor material is simple, and industrialized mass production can be realized.

Description

technical field [0001] The invention relates to the field of new semiconductor materials, in particular to an indium sulfide-based impurity band semiconductor and its preparation method and application. Background technique [0002] There are many ways to utilize solar energy, including photothermal conversion, photoelectric conversion, and photochemical conversion. Among the many solar energy utilization methods, the most attractive one is the solar cell based on the photoelectric effect. Solar cells use semiconductor materials as the medium to realize the conversion of light energy and electrical energy. From the date of its birth to the present, solar cells have achieved vigorous development, and solar cells with various new structures and new materials emerge in an endless stream. The semiconductors of traditional silicon-based solar cells and thin-film solar cells can only absorb photons near the band gap, which limits the efficiency of solar cells and severely restri...

AI Technical Summary

Problems solved by technology

Due to the limitation of the electronic band structure, traditional semiconductors can only absorb part of the photons, and cannot effectively use photons with energy higher or lower than the band gap, and the light absorption capacity is limited, resulting in limited photoelectric conversion efficiency of traditional solar cells.

Indium trisulfide (In 2 S 3 ) is a potential III-VI semiconductor material, because of its good stability, light transmittance, suitable band gap and good light conduction characteristics, it is useful in photoelectric and electrochemical solar cells It has a good application prospect, but the intrinsic diindium trisulfide semiconductor has very weak conductivity and poor thermal stability. Therefore, it is not suitable to directly use it to manufacture semiconductor devices, and it needs to be modified to realize its use in solar energy absorbing materials. Applications

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