Black phosphorus based p-n photodetector

A photoelectric detector, black phosphorus technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problem that the cut-off wavelength cannot be extended

Active Publication Date: 2019-05-10
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, they can only be applied in the near-infrared range, and neither can further extend the cut-off wavelength in the entire mid-infrared (MIR) range

Method used

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  • Black phosphorus based p-n photodetector
  • Black phosphorus based p-n photodetector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0020] Embodiment: Fabrication and analysis of photodetectors based on black phosphorus (BP).

[0021] refer to figure 1 , the implementation steps of this example are as follows:

[0022] Step 1: Doping the substrate to make a buried layer.

[0023] Firstly, the substrate is doped by ion implantation process. The temperature of the silicon substrate 1 is controlled at room temperature to avoid thermal defects caused by high-temperature diffusion, and boron doping is performed to obtain a P-type silicon substrate 1 . Then use the thermal oxidation process, the method of combining dry and wet oxygen, and grow SiO at a temperature of 900 degrees. 2 The thickness of the oxide mask layer 2 is controlled at 50nm.

[0024] Step 2: Depositing Black Phosphorus

[0025] A layer of black phosphorus was deposited on the oxide mask layer by magnetron sputtering in physical vapor deposition, with a gas pressure of 2 millitorr and a deposition temperature of 110 degrees for 80 minutes....

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Abstract

The invention discloses a black phosphorus-based p-n photoelectric detector. The black phosphorus-based p-n photoelectric detector comprises a substrate, a masked oxide layer positioned on the substrate and an active region structure positioned on the masked oxide layer; the source region structure comprises a source, a drain, and a gate which consists of black phosphorus (BP) and polydimethylsiloxane (PDMS); the substrate is a P type substrate; the masked oxide layer adopts the material of SiO<2> with thickness of 50nm; by applying stretched or compressed polydimethylsiloxane (PDMS), different strains are introduced to the black phosphorus (BP) in the zigzag shape and handrail chair directions to be placed on the top of the masked oxide layer; the number of the black phosphorus (BP) layers is five; the source and the drain are in contact, and electron beam photoetching definition can be performed by poly-methyl methacrylate (PMMA); the electrode material is selected from Ti and Au; and a voltage regulation device can be applied to the substrate. The BP-based p-n photoelectric detector is designed and simulated; and by analyzing the black phosphorus and the energy structure in different strain directions and by considering a dark current effect, absorption coefficient and responsivity of the system are optimized, and the responsivity can be as high as 66.29A / W.

Description

technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to a photodetector device prepared based on black phosphorus (BP). Background technique [0002] In recent years, photodetectors related to optoelectronic technology have developed rapidly, and more and more materials have been applied to the research of detectors. As we all know, the commonly used photodetection materials in near-infrared spectroscopy are mainly Ge with a high absorption coefficient. However, Ge cannot cover the entire L-band (1565–1625 nm), and even introduces in-plane tensile strain. As another group of substitutes, GeSn alloy can adjust the bandgap by adjusting the content of Sn or introducing strain, which can extend the optical communication band to the U band (1625-1675nm), and even has good responsivity at 2000nm. However, they can only be applied in the near-infrared range, and neither can further extend the cut-off wavelength in the entire...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/103H01L29/16H01L29/15
CPCH01L29/151H01L29/16H01L31/103
Inventor 刘艳黄炎张思清韩根全郝跃
Owner XIDIAN UNIV
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