Oxide thin-film, thin-film transistor and preparation method thereof

A technology of oxide thin film and thin film transistor, which is applied in the direction of transistor, semiconductor/solid-state device manufacturing, semiconductor device, etc., can solve the problems of thin film transistor threshold voltage switch ratio influence, weak suppression ability, etc., to improve reliability and electrical characteristics , enhance the inhibitory ability, increase the effect of crystallization temperature
CN102709312AActive Publication Date: 2012-10-03PEKING UNIV
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Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
PEKING UNIV
Publication Date
2012-10-03

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Abstract

The invention discloses an oxide thin-film, a thin-film transistor and a preparation method thereof. The invention relates to the technical field of the thin-film transistor. In the thin-film transistor, the chemical general formula of the oxide thin-film of the oxide thin-film channel layer is In-X-Zn-O, wherein X is Si element, Ge element, La element or Y element; a gate electrode is arranged over a substrate; a gate insulation layer is arranged at the gate electrode, and over the portion of the substrate not covered by the gate electrode; the oxide thin-film channel layer is arranged over the gate insulation layer; a source electrode area is arranged at one side of the upper of the oxide thin-film channel layer; and the leakage electrode area is arranged at the side of the upper of the oxide thin-film channel layer. Based on the In-X-Zn-O thin-film transistor, the invention can enhance the inhibiting ability of the oxide thin-film channel layer to the formation of a charge carrier, improves the crystallization temperature of a crystal so as to improve the consistency of element preparation, and weakens the effects of the oxide thin-film channel layer to the threshold voltage, leakage current Ioff and on-off time ratio of the thin-film transistor.
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Description

technical field

[0001] The invention relates to the technical field of thin film transistors, in particular to an oxide thin film, a thin film transistor and a preparation method thereof. Background technique

[0002] In display technology, a large number of thin film transistors are usually used to form circuits to drive display devices. For a long time in the past, silicon-based materials compatible with CMOS (Complementary Metal Oxide Semiconductor, Complementary Metal Oxide Semiconductor) processes have been used.

[0003] However, the light transmittance of silicon-based materials is poor. Furthermore, when these silicon-based materials are produced, the film formation of amorphous silicon, which can be produced at a lower temperature than polycrystalline silicon, requires a high temperature of about 200Β° C. or higher. Therefore, a polymer film which has advantages of being cheap, lightweight, and flexible cannot be used as a base material. Therefore, there are obvio...

Claims

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