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Oxide thin-film, thin-film transistor and preparation method thereof

A technology of oxide thin film and thin film transistor, which is applied in the direction of transistor, semiconductor/solid-state device manufacturing, semiconductor device, etc., can solve the problems of thin film transistor threshold voltage switch ratio influence, weak suppression ability, etc., to improve reliability and electrical characteristics , enhance the inhibitory ability, increase the effect of crystallization temperature

Active Publication Date: 2012-10-03
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The technical problem to be solved by the present invention is: how to provide an oxide thin film, a thin film transistor and a preparation method thereof, so as to overcome the weak ability of the channel layer of the existing thin film transistor to suppress the formation of carriers, and the influence on the threshold voltage of the thin film transistor. , leakage current I off And the problem that the switch has a greater influence than

Method used

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  • Oxide thin-film, thin-film transistor and preparation method thereof
  • Oxide thin-film, thin-film transistor and preparation method thereof
  • Oxide thin-film, thin-film transistor and preparation method thereof

Examples

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Embodiment 1

[0057] figure 1It is a schematic structural diagram of a bottom-gate staggered thin film transistor (TFT with inverted staggered structure) described in the first embodiment of the present invention, as shown in figure 1 As shown, the bottom gate staggered thin film transistor includes: a substrate 11 , a gate electrode 12 , a gate insulating layer 13 , an oxide thin film channel layer 14 , a source region 15 and a drain region 16 .

[0058] The gate electrode 12 is disposed above the substrate 11 . The substrate 11 can be made of silicon, glass or plastic.

[0059] The gate insulating layer 13 is disposed above the gate electrode 12 and the portion of the substrate 11 not covered by the gate electrode 12 .

[0060] The oxide film channel layer 14 is disposed above the gate insulating layer 13 . The general chemical formula of the oxide thin film used in the oxide thin film channel layer 14 is In-X-Zn-O, wherein X is Si, Ge, La or Y element. The oxide film is also doped wi...

Embodiment 2

[0072] image 3 It is a schematic structural diagram of a bottom-gate coplanar thin film transistor (TFT with inverted staggered structure) described in the second embodiment of the present invention, as shown in image 3 As shown, the bottom-gate coplanar thin film transistor includes: a substrate 21 , a gate electrode 22 , a gate insulating layer 23 , an oxide film channel layer 24 , a source region 25 and a drain region 26 . The materials used for each component in the bottom-gate coplanar thin film transistor are the same as those in the bottom-gate staggered thin film transistor described in Embodiment 1, the difference lies in that the structure of each component is as follows:

[0073] The gate electrode 22 is disposed above the substrate 21;

[0074] The gate insulating layer 23 is disposed above the gate electrode 22 and the portion of the substrate 21 not covered by the gate electrode 22;

[0075] The source region 25 is disposed on one side above the gate insulati...

Embodiment 3

[0080] Figure 4 It is a schematic structural diagram of a top gate staggered thin film transistor (TFT with top gate staggered structure) described in the third embodiment of the present invention, as shown in Figure 4 As shown, the top gate staggered thin film transistor includes: a substrate 31 , a gate electrode 32 , a gate insulating layer 33 , an oxide thin film channel layer 34 , a source region 35 and a drain region 36 . The components in the top-gate staggered thin film transistor are made of the same materials as those in the bottom-gate staggered thin film transistor in Embodiment 1, the difference lies in the structure of each component is as follows:

[0081] The source region 35 is disposed on one side above the substrate 31;

[0082] The drain region 36 is disposed on the other side above the substrate 31;

[0083] The oxide film channel layer 34 is disposed above the source region 35 and the drain region 36 and the portion of the substrate 31 not covered by ...

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Abstract

The invention discloses an oxide thin-film, a thin-film transistor and a preparation method thereof. The invention relates to the technical field of the thin-film transistor. In the thin-film transistor, the chemical general formula of the oxide thin-film of the oxide thin-film channel layer is In-X-Zn-O, wherein X is Si element, Ge element, La element or Y element; a gate electrode is arranged over a substrate; a gate insulation layer is arranged at the gate electrode, and over the portion of the substrate not covered by the gate electrode; the oxide thin-film channel layer is arranged over the gate insulation layer; a source electrode area is arranged at one side of the upper of the oxide thin-film channel layer; and the leakage electrode area is arranged at the side of the upper of the oxide thin-film channel layer. Based on the In-X-Zn-O thin-film transistor, the invention can enhance the inhibiting ability of the oxide thin-film channel layer to the formation of a charge carrier, improves the crystallization temperature of a crystal so as to improve the consistency of element preparation, and weakens the effects of the oxide thin-film channel layer to the threshold voltage, leakage current Ioff and on-off time ratio of the thin-film transistor.

Description

technical field [0001] The invention relates to the technical field of thin film transistors, in particular to an oxide thin film, a thin film transistor and a preparation method thereof. Background technique [0002] In display technology, a large number of thin film transistors are usually used to form circuits to drive display devices. For a long time in the past, silicon-based materials compatible with CMOS (Complementary Metal Oxide Semiconductor, Complementary Metal Oxide Semiconductor) processes have been used. [0003] However, the light transmittance of silicon-based materials is poor. Furthermore, when these silicon-based materials are produced, the film formation of amorphous silicon, which can be produced at a lower temperature than polycrystalline silicon, requires a high temperature of about 200° C. or higher. Therefore, a polymer film which has advantages of being cheap, lightweight, and flexible cannot be used as a base material. Therefore, there are obvio...

Claims

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Application Information

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IPC IPC(8): H01L29/24H01L29/786H01L21/336
Inventor 康晋锋王琰陆自清刘晓彦
Owner PEKING UNIV
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