Indium sulfide-based impurity band semiconductor and preparation method and application thereof

Abstract

The invention relates to a method for constructing an In2S3 impurity band semiconductor. An In2S3 semiconductor serves as an index compound, a Ge element is adopted for doping the In position of the In2S3 semiconductor, and the In2S3 impurity band semiconductor is obtained. Compared with the prior art, according to the In2S3 impurity band semiconductor, In2S3 with the excellent performance is adopted as a substrate material, the VI group element Ge is adopted for doping the In positon of the In2S3 semiconductor, thus a strip of an impurity band is introduced in an index band gap, the electrontransition path is increased, the absorption spectrum is broadened, optical absorption of raw materials is enhanced, thus the In2S3 semiconductor can be directly used as a solar cell adsorption material, and practical significance is achieved for development of solar energy sources; the theoretical calculated absorption spectrum of the In2S3 and Ge doped In2S3 shows that an intrinsic semiconductorhas only one absorbing edge, after the Ge is doped, a novel absorbing edge occurs, and an absorbing curve starts being enhanced significantly in the energy area lower than the band gap. According tothe Ge doped In2S3 semiconductor material, the preparation method is simple, and industrial large-scale production can be achieved.

Description

technical field [0001] The invention relates to the field of new semiconductor materials, in particular to an indium sulfide-based impurity band semiconductor and its preparation method and application. Background technique [0002] There are many ways to utilize solar energy, including photothermal conversion, photoelectric conversion, and photochemical conversion. Among the many solar energy utilization methods, the most attractive one is the solar cell based on the photoelectric effect. Solar cells use semiconductor materials as the medium to realize the conversion of light energy and electrical energy. From the date of its birth to the present, solar cells have achieved vigorous development, and solar cells with various new structures and new materials emerge in an endless stream. The semiconductors of traditional silicon-based solar cells and thin-film solar cells can only absorb photons near the band gap, which limits the efficiency of solar cells and severely restri...

AI Technical Summary

Problems solved by technology

Due to the limitation of the electronic band structure, traditional semiconductors can only absorb part of the photons, and cannot effectively use photons with energy higher or lower than the band gap, and the light absorption capacity is limited, resulting in limited photoelectric conversion efficiency of traditional solar cells.

Indium trisulfide (In 2 S 3 ) is a potential III-VI semiconductor material, because of its good stability, light transmitt

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